5V to 6kV DC-DC Converter Using Switching Regulator with Cockcroft-Walton Voltage Multiplier for High Voltage Power Supply Module

Author(s):  
Nor A. Azmi ◽  
Sohiful A.Z. Murad ◽  
Azizi Harun ◽  
Rizalafande C. Ismail

Background: This paper describes the design of 5 V to 6 kV DC-DC converter by using a switching regulator with Cockroft-Walton (C-W) voltage multiplier for a high voltage power supply module. Methods: The proposed design consists of Pulse Width Modulation (PWM) controller circuit, voltage multiplier, and feedback signal. A single unit of 5 V input triggers LT1618 controller circuit to generate 20 V which then produces 300 V from LT8331 output that is connected to diode-capacitor multiplier circuit to achieve final 6 kV. A negative feedback signal is required to stabilize an output voltage. With the implementation of C-W voltage multiplier technique, the output is boosted up as required from the input signal voltage 5 V DC. Results: The LTspice simulation results indicate that the proposed DC converter can generate 6.20 kV. Line regulation of 17 % and the load regulation of 14 % are obtained based on the proposed design. Conclusion: The proposed design is suitable for high voltage power supply module.

2015 ◽  
Vol 771 ◽  
pp. 145-148 ◽  
Author(s):  
Muhammad Miftahul Munir ◽  
Dian Ahmad Hapidin ◽  
Khairurrijal

Research on nanofiber materials is actively done around the world today. Various types of nanofibers have been synthesized using an electrospinning technique. The most important component when synthesizing nanofibers using the electrospinning technique is a DC high voltage power supply. Some requirements must be fulfilled by the high voltage power supply, i.e., it must be adjustable and its output voltage reaches tens of kilovolts. This paper discusses the design and development of a high voltage power supply using a diode-split transformer (DST)-type high voltage flyback transformer (HVFBT). The DST HVFBT was chosen because of its simplicity, compactness, inexpensiveness, and easiness of finding it. A pulse-width modulation (PWM) circuit with controlling frequency and duty cycle was fed to the DST HVFBT. The high voltage power supply was characterized by the frequency and duty cycle dependences of its output voltage. Experimental results showed that the frequency and duty cycle affect the output voltage. The output voltage could be set from 1 to 18 kV by changing the duty cycle. Therefore, the nanofibers could be synthesized by employing the developed high voltage power supply.


2014 ◽  
Vol 912-914 ◽  
pp. 927-930
Author(s):  
Qiang Jiang

In this paper, a HV and HF switch power supply was designed, which was controlled through a single chip microcomputer, also the MOSFET was used as the switch power tube. The PWM (pulse width modulation) technique and half-bridge inverter topology have been used to invert AC into the DC that can be adjust from 0V~25KV and the operating frequency is 35KHz, Through the simulation with the Saber software and practical use, the feasibility of the scheme and the correctness of the design have been verified.


Electronics ◽  
2021 ◽  
Vol 10 (15) ◽  
pp. 1866
Author(s):  
Can Jiang ◽  
Jun Yang ◽  
Mingwu Fan

The distribution of disk output voltage is a key factor for the design of an insulated core transformer (ICT) high-voltage power supply. The development of an ICT involves the design and optimization of many parameters, which greatly affect the uniformity of disk output voltage. A new ICT structure with dummy primary windings can compensate for the disk output voltage, which aims to improve uniformity. In this work, an optimization method based on a particle swarm optimization (PSO) algorithm was used to optimize the design parameters of an ICT with dummy primary windings. It achieved an optimal uniformity of disk output voltage and load regulation. The design parameters, including the number of secondary winding turns and the compensation capacitance, were optimized based on the finite-element method (FEM) and Simulink circuit simulation. The results show that the maximum non-uniformity of the disk output voltage is reduced from 11.1% to 4.4% from no-load to a full load for a 200 kV/20 mA HUST-ICT prototype. Moreover, the load regulation is greatly reduced from 14.3% to 9.6%. The method improves the stability and reliability of the ICT high voltage power supply and greatly reduces the design time.


2019 ◽  
Vol 81 (5) ◽  
Author(s):  
Sohiful Anuar Zainol Murad ◽  
Nor Afiqah Azmi ◽  
Azizi Harun ◽  
Tun Zainal Azni Zulkifli

A high dc voltage is commonly used in many process industries in testing, research laboratories and others. Currently, a high voltage dc is implemented using transformer. In this paper, a novel high voltage low current transformerless step-up dc-dc converter is presented. The proposed design consists of two step-up dc-dc converters with negative feedback signal and 15 stages of Cockcroft-Walton (C-W) voltage multiplier. The dc input voltage of 5 V triggers the first step-up dc-dc converter circuit to generate 30 V dc voltage and the second step-up dc-dc converter circuit boosts up to 100 V dc voltage. Further, diode-capacitor multiplier circuit is connected at the final stage to achieve 1.6 kV dc output voltages at 200 kHz switching frequency. The simulation results indicate that the proposed dc-dc converter can generate 1.548 kV dc voltage with a load current of 0.16 mA at 10 MΩ load resistor. Meanwhile, the experiment results show that the proposed dc-dc converter can generate 1.475 kV dc voltage with 80 % efficiency. The results validate both the simulation and experimental of the proposed high dc voltage power supply module.


Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.


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