scholarly journals Терагерцовое излучение из наноструктур карбида кремния

Author(s):  
Н.Т. Баграев ◽  
С.А. Кукушкин ◽  
А.В. Осипов ◽  
Л.Е. Клячкин ◽  
А.М. Маляренко ◽  
...  

For the first time, electroluminescence was discovered in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due to the longitudinal drain- source current. The electroluminescence spectra obtained in the terahertz frequency range, 3.4, 0.12 THz, arise due to the quantum Faraday effect. Within the framework of the proposed model, the longitudinal current induces a change in the number of magnetic flux quanta in the edge channels, which leads to the appearance of a generation current in the edge channel and, accordingly, to terahertz radiation.

Author(s):  
В.А. Рыжов ◽  
Б.Т. Мелех

AbstractTernary telluride alloys of Ge–Se(Sb)–Te and Si–Ge(Ga)–Te systems are synthesized in glassy and crystalline states for use in the terahertz frequency range. The transmission spectra of the obtained alloys are measured and studied in a wide wavelength range from 0.75 to 300 μm. The possible mechanisms of their formation are discussed. A comparative analysis of the results shows that the Ge_14Sb_28Te_56 alloy of the GST system is most promising. Its phonon spectrum is in the range of 40–280 cm^–1, limiting the long-wavelength transmission window of this alloy by 35 μm. Optimization of the Ge_14Sb_28Te_56 composition, the removal of impurities, and heat treatment will promote a further decrease in the absorbance in the far-infrared spectrum of this alloy.


2018 ◽  
pp. 72-91
Author(s):  
Гліб Леонідович Авдєєнко ◽  
Сергій Георгійович Бунін ◽  
Теодор Миколайович Наритник

The article presented results of researches conducted by the team of authors devoted to the possibilities of creation for the first time in Ukraine the real prerequisites for solving the fundamental problem of constructing digital telecommunication systems with the use of terahertz technologies. The necessity of transition to the use of the terahertz frequency range substantiated during the deployment of future telecommunication systems of ultra-high bandwidth. The analysis of characteristics of the path of signal propagation and determination of signal losses in conditions of operation of the radio relay system in the terahertz frequency range is carried out. The conducted analysis has shown that in the frequency range of 30-300 GHz,  the most important types of fading that should consider during the design are fading due to the easing of the signal by hydrometeors and fading due to the absorption of the radio signal in gases, fading due to the influence of the antenna pattern. It determined that the work of the radio relay lines in the terahertz range allows practically not to take into consideration the refraction and interference of electromagnetic waves reflected from interference in the zone of radio signal propagation, which arises especially in conditions of dense urban development. This is due primarily to the fact that the terahertz waves have a low ability to "bend" the noise, and secondly, at the current frequency of 30 to 300 Hz apply at relatively small distances (up to 5 km), which allows for avoiding spatial planning interference to the zone of direct visibility of antennas and the first Fresnel zone. It considered the main factors that lead to the emergence of fading in radio relay communication lines. It is shown that in the terahertz range the greatest influence on the energy potential of the radio-relay lines is attenuating in hydro meteors and gases. The terahertz frequency range areas allocated that is most suitable for application in radio relay communication lines. The principles of formation of signal-code construction considered methods and new technical solutions for choosing the type of signal construction proposed in order to achieve the best bandwidth and performance in the channel of communication of a wireless gigabit system of transmission in the terahertz range. The physical simulation of the ultra high-speed shaper based on multifrequency multiplexing of the modulated OFDM digital streams has been carried out, bench tests and optimization have been carried out to achieve the maximum bandwidth of the digital data transmission channel in the Ethernet format using the developed software. The developed software and hardware allowed for the first time to reach the overall channel speed with a full duplex up to 1.2 Gb / s. On the basis of the generalization of the results of theoretical research and experimental work, the analysis of the existing radio relay element base, the design of the main nodes of the receiving and transmitting parts of a telecommunication system with a gigabit throughput in the frequency range 130-134 GHz, the structural scheme of the transmitting and receiving system of the system is developed: frequency mixer with subharmonic pumping, the heterodyne, which uses a highly stable reference quartz oscillator with a subsequent chain of multiplication and under power stage, bandpass filter using a thin metal plate in the E-plane of the waveguide channel 1.6x0.8 mm, horn antenna. It is presented the results of experimental studies of the main nodes of the receiving and transmitting parts of a telecommunication system with a gigabit throughput in the frequency range 130-134 GHz. Scientific novelty of the work consists in generalization and development of the theory of distribution, generation and measurement of terahertz signals, in the development of the method of multiple frequency multiplexing and generation of modulated OFDM digital streams in the terahertz frequency range and the development of the principles of functional design of the receiving and transmitting parts of a telecommunication system with a gigabit throughput in terahertz frequency range


2015 ◽  
Vol 74 (19) ◽  
pp. 1767-1776 ◽  
Author(s):  
V. I. Bezborodov ◽  
O.S. Kosiak ◽  
Ye. M. Kuleshov ◽  
V. V. Yachin

2017 ◽  
Vol 76 (10) ◽  
pp. 929-940 ◽  
Author(s):  
Yu. S. Kovshov ◽  
S. S. Ponomarenko ◽  
S. A. Kishko ◽  
A. A. Likhachev ◽  
S. A. Vlasenko ◽  
...  

2013 ◽  
Vol 52 (25) ◽  
pp. 6364 ◽  
Author(s):  
Lin’an Li ◽  
Wei Song ◽  
Zhiyong Wang ◽  
Shibin Wang ◽  
Mingxia He ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.


Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 268
Author(s):  
Victor Pacheco-Peña

The terahertz frequency range (0 [...]


2021 ◽  
Vol 7 (15) ◽  
pp. eabf9809
Author(s):  
Sergey Kovalev ◽  
Hassan A. Hafez ◽  
Klaas-Jan Tielrooij ◽  
Jan-Christoph Deinert ◽  
Igor Ilyakov ◽  
...  

Graphene is conceivably the most nonlinear optoelectronic material we know. Its nonlinear optical coefficients in the terahertz frequency range surpass those of other materials by many orders of magnitude. Here, we show that the terahertz nonlinearity of graphene, both for ultrashort single-cycle and quasi-monochromatic multicycle input terahertz signals, can be efficiently controlled using electrical gating, with gating voltages as low as a few volts. For example, optimal electrical gating enhances the power conversion efficiency in terahertz third-harmonic generation in graphene by about two orders of magnitude. Our experimental results are in quantitative agreement with a physical model of the graphene nonlinearity, describing the time-dependent thermodynamic balance maintained within the electronic population of graphene during interaction with ultrafast electric fields. Our results can serve as a basis for straightforward and accurate design of devices and applications for efficient electronic signal processing in graphene at ultrahigh frequencies.


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