scholarly journals Фазовый переход полупроводник--суперионик в пленках сульфида серебра

2020 ◽  
Vol 62 (12) ◽  
pp. 2138
Author(s):  
А.В. Ильинский ◽  
Р.А. Кастро ◽  
М.Э. Пашкевич ◽  
И.О. Попова ◽  
Е.Б. Шадрин
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Phase Transition ◽  
Complex Impedance ◽  
Silver Sulfide ◽  
Electrical Circuit ◽  
Cole Diagram ◽  
Before And After ◽  
Superionic Phase Transition ◽  
Frequency Dependences

Frequency dependences of dielectric loss tangent tanδ (f) and Cole-Cole diagram of thin films of silver sulfide at various temperatures in the range 0-200 ° C were studied. A comparison of experimental data with the results of calculation of electrical circuit complex impedance of Ag2S samples is made. The comparison is made for temperatures before and after semiconductor-superionic phase transition. Based on the analysis of experimental results and literature data, a microscopic model of the phase transition in Ag2S is proposed.

scholarly journals Impedance Spectroscopy of Lead-Free Ferroelectric Coatings

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 221
Author(s):  
Mariya Aleksandrova ◽  
Ivailo Pandiev
Keyword(s):  
Composite Coatings ◽  
Electrical Circuit ◽  
Ferroelectric Materials ◽  
Piezoelectric Transducers ◽  
Lead Free ◽  
Electrical Behavior ◽  
Oxide Composite ◽  
Before And After ◽  
Frequency Dependences ◽  
Good Agreement

This paper presents impedance measurements of ferroelectric structures involving lead-free oxide and polymer-oxide composite coatings for sensing and energy harvesting applications. Three different ferroelectric materials grown by conventional microfabrication technologies on solid or flexible substrates are investigated for their basic resonant characteristics. Equivalent electrical circuit models are applied to all cases to explain the electrical behavior of the structures, according to the materials type and thickness. The analytical results show good agreement with the experiments carried out on a basic types of excited thin-film piezoelectric transducers. Additionally, temperature and frequency dependences of the dielectric permittivity and losses are measured for the polymer-oxide composite device in relation with the surface morphology before and after introduction of the polymer to the functional film.

Photoinduced Heating and Phase Transition in CMR Materials

2001 ◽  
Vol 690 ◽  
Author(s):  
N. Noginova ◽  
E. Arthur ◽  
R. Ulysse ◽  
E. S. Gillman ◽  
C. E. Bonner
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Phase Transition ◽  
Laser Light ◽  
Ferromagnetic Phase ◽  
Relaxation Processes ◽  
Light Illumination ◽  
Fast Switching ◽  
Ferromagnetic Phase Transition ◽  
Time Specific

ABSTRACTFast switching from conductor to insulator induced by laser light illumination has been studied in single crystals and thin films of La1−xSrxMnO3 in the range of the ferromagnetic phase transition. Based on our experimental data on the photoresponse as a function of temperature, electric current, and intensity, we have demonstrated that the switching and relaxation processes are determined by heating and heat conduction processes. The relaxation time, specific heat and the latent heat constants have been estimated.

Optical investigations of superionic phase transition in Ag2CdI4 thin films

1999 ◽  
Vol 119 (1-4) ◽  
pp. 103-107 ◽  
Author(s):  
I.M. Bolesta ◽  
O.V. Futey ◽  
O.G. Syrbu
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Superionic Phase ◽  
Superionic Phase Transition

Effect of Co Doping on the Functional Properties of MnO2 Thin Films

2021 ◽  
Vol 09 (01n02) ◽  
Author(s):  
Bellal Sadouki ◽  
Hadj Benhebal ◽  
Bedhiaf Benrabah ◽  
Abdelmalek Kharroubi
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Complex Impedance ◽  
Cobalt Content ◽  
Dip Coating ◽  
Electrical Circuit ◽  
Co Doping ◽  
Glass Substrates ◽  
Coating Method ◽  
Co Doped

Thin films of Co-doped [Formula: see text]-MnO2 have been deposited on Pyrex glass substrates by the sol–gel dip-coating method with Co concentrations of 1, 3, 5 and 7 at.%. The deposited thin films were characterized for their structural, morphological, optical and electrical properties. The XRD spectra confirm that all the samples have tetragonal phase of [Formula: see text]-MnO2. FTIR spectra reveal the presence of Mn–O in all of the samples. AFM measurements indicate that the surfaces of films have been affected with cobalt content incorporation. Transmittance spectra of the undoped and Co-doped MnO2 thin films were recorded by a UV–vis spectrometer. Optical gap was found to be in the 2.60–2.51-eV scale. This decrease is due to the presence of manganese vacancies and/or oxygen defects. From the complex impedance measurements that show semicircular arcs at different cobalt contents, an equivalent parallel [Formula: see text] electrical circuit has been proposed.

scholarly journals Диэлектрическая спектроскопия и механизм фазового перехода полупроводник-металл в легированных пленках VO-=SUB=-2-=/SUB=-:Ge и VO-=SUB=-2-=/SUB=-:Mg

2020 ◽  
Vol 54 (4) ◽  
pp. 331
Author(s):  
А.В. Ильинский ◽  
Р.А. Кастро ◽  
М.Э. Пашкевич ◽  
Е.Б. Шадрин
Keyword(s):  
Vanadium Dioxide ◽  
Room Temperature ◽  
Dissipation Factor ◽  
Electrical Circuit ◽  
Low Frequencies ◽  
High Frequencies ◽  
Cole Diagram ◽  
Metal Phase Transition ◽  
Additional Maximum ◽  
Frequency Dependences

Abstract The frequency dependences of the dissipation factor tanδ( f ) and the Cole–Cole diagrams for germanium- and magnesium-doped vanadium-dioxide films in the range of 0.1–10^6 Hz are obtained. Measurements at temperatures between 173–373 K are performed. It is found that, at room temperature, an additional maximum in the tanδ( f ) dependence and an additional semicircle in the Cole–Cole diagram of the VO_2:Ge films as compared with those of undoped films appear at low frequencies. In the VO_2:Mg films, similar additional features in the dielectric spectra are observed at high frequencies. It is shown that the shape of the Cole – Cole diagrams for all the films is almost temperature independent in the mentioned temperature range, while the frequencies f _0 corresponding to the tanδ( f ) maxima increase with temperature. To interpret the dielectric spectroscopy data, a combined equivalent electrical circuit of the film sample is proposed. The mechanisms of the effect of Ge and Mg impurities on the characteristics of the complex Mott–Peierls semiconductor–metal phase transition are established.

Semiconductor–Superionic Phase Transition in Silver Sulfide Films

2020 ◽  
Vol 62 (12) ◽  
pp. 2403-2411
Author(s):  
A. V. Il’inskii ◽  
R. A. Castro ◽  
M. E. Pashkevich ◽  
I. O. Popova ◽  
E. B. Shadrin
Keyword(s):  
Phase Transition ◽  
Silver Sulfide ◽  
Superionic Phase ◽  
Superionic Phase Transition

scholarly journals Диэлектрическая спектроскопия и особенности механизма фазового перехода полупроводник-металл в пленках VO-=SUB=-2-=/SUB=-

2020 ◽  
Vol 54 (2) ◽  
pp. 153
Author(s):  
А.В. Ильинский ◽  
Р.А. Кастро ◽  
М.Э. Пашкевич ◽  
Е.Б. Шадрин
Keyword(s):  
Phase Transition ◽  
Electrical Properties ◽  
Vanadium Dioxide ◽  
Thermal Hysteresis ◽  
Hysteresis Loops ◽  
Electrical Circuit ◽  
Equivalent Electrical Circuit ◽  
Transition Mechanism ◽  
Metal Phase Transition ◽  
Frequency Dependences

Abstract In the range of 0.1–10^6 Hz, the temperature-induced transformation of the frequency dependences of the dielectric-loss tangent tanδ( f ) as well as the Cole–Cole diagrams for undoped vanadium-dioxide films are investigated. The measurements are carried out in the temperature range T = 273–373 K. It is shown that the shape of the Cole–Cole diagrams for all films depends slightly on the temperature in the specified interval, while the frequencies f _0 corresponding to the peaks of the function tanδ( f ) increase with temperature. The thermal-hysteresis loops of the frequency positions f _0( T ) of the peaks are measured. When interpreting the data of dielectric spectroscopy, a complex equivalent electrical circuit of the sample is used; it makes it possible to detect the presence of two types of grains with different electrical properties in undoped VO_2 films. The presence of two types of grains determines the features of the semiconductor–metal phase-transition mechanism in VO_2 films.

scholarly journals Суперионная проводимость твердых растворов (TlGaSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(TlInS-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

2018 ◽  
Vol 52 (10) ◽  
pp. 1111
Author(s):  
Р.М. Сардарлы ◽  
А.П. Абдуллаев ◽  
Н.А. Алиева ◽  
Ф.Т. Салманов ◽  
М.Ю. Юсифов ◽  
...  
Keyword(s):  
Phase Transition ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Impedance Spectroscopy ◽  
Complex Impedance ◽  
Relaxation Processes ◽  
Spectroscopy Technique ◽  
Abrupt Increase ◽  
Impedance Spectroscopy Technique ◽  
Frequency Dependences

AbstractSamples of (TlGaSe_2)_1 – _ x (TlInS_2)_ x solid solutions are synthesized. The frequency dependences (2 × 10^1–10^6 Hz) of components of the total complex impedance are studied by the impedance spectroscopy technique and relaxation processes are investigated depending on the composition of the (TlGaSe_2)_1 – _ x (TlInS_2)_ x solid solution in the solubility region ( x = 0–0.4). Corresponding diagrams on the ( Z ''– Z ') complex plane are analyzed using the equivalent substitutional circuit method. An anomaly in the temperature dependence of the electrical conductivity, which manifests itself in an abrupt increase in the conductivity, is found for the studied (TlGaSe_2)_1 – _ x (TlInS_2)_ x solid solution at 400 K. This peculiarity is associated with the phase transition into the superionic state.

STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF SnO2 THIN FILMS DOPED BY GROUP-IA ELEMENTS

2017 ◽  
Vol 24 (Supp01) ◽  
pp. 1850007 ◽  
Author(s):  
HADJ BENHEBAL ◽  
BEDHIAF BENRABAH ◽  
AEK AMMARI ◽  
YACINE MADOUNE ◽  
STÉPHANIE D. LAMBERT
Keyword(s):  
Thin Films ◽  
Tin Dioxide ◽  
Sol Gel ◽  
Complex Impedance ◽  
Dip Coating ◽  
Electrical Circuit ◽  
Thin Layers ◽  
Impedance Method ◽  
Rutile Structure ◽  
Chloride Dihydrate

This paper presents the results of an experimental work devoted to the synthesis and the characterization of tin dioxide (SnO[Formula: see text] thin layers doped with group-IA elements (Li, Na and K). The materials were synthesized by the sol–gel method and deposited by dip-coating, using tin (II) chloride dihydrate as a source of tin and absolute ethyl alcohol as solvent. Thin films prepared were characterized by several techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared spectroscopy (IR), visible and ultraviolet spectroscopy and complex impedance method. The results obtained show that the materials kept their tetragonal rutile structure with preferred orientation of (101), whereas doping leads to a reduction of their energy band gap. The complex impedance analysis suggests that the different processes occurring at the electrode interface are modeled by an electrical circuit not affected by the doping.

scholarly journals Получение, структура и диэлектрические характеристики монокристаллов и тонких пленок Sr-=SUB=-0.61-=/SUB=-Ba-=SUB=-0.39-=/SUB=-Nb-=SUB=-2-=/SUB=-O-=SUB=-6-=/SUB=-

2019 ◽  
Vol 61 (2) ◽  
pp. 376
Author(s):  
А.В. Павленко ◽  
Л.И. Ивлева ◽  
Д.В. Стрюков ◽  
А.П. Ковтун ◽  
А.С. Анохин ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Dielectric Loss ◽  
Single Crystals ◽  
Lattice Dynamics ◽  
Tetragonal Symmetry ◽  
Transition Temperatures ◽  
Dielectric Characteristics ◽  
Phase Transition Temperatures ◽  
Frequency Dependences

AbstractThe structure, lattice dynamics, and dielectric characteristics of Sr_0.61Ba_0.39Nb_2O_6 (SBN-61) single crystals and SBN-61/(001)MgO thin films have been studied. The analysis of temperature and frequency dependences of permittivity and dielectric loss tangents in a range of 10–500 K for a SBN-61 crystal has allowed one to establish the phase transition temperatures. The SBN-61/(001)MgO films are found to possess the tetragonal symmetry, characteristic of a SBN-61 crystal, but their lattice parameters are different from the latter.

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