scholarly journals INFLUENCE OF ENERGY ON PHASE COMPOSITION OF END-PRODUCT OBTAINED BY VACUUM-FREE ELECTRIC ARC SYNTHESIS OF CUBIC SILICON CARBIDE

2018 ◽  
Vol 19 (2) ◽  
pp. 165-176
Author(s):  
A.Y. Pak ◽  
◽  
G.Y. Mamontov ◽  
O.A. Bolotnikova ◽  
◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Phase Composition ◽  
Electric Arc ◽  
Cubic Silicon Carbide

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide

Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN

2009 ◽  
Vol 615-617 ◽  
pp. 565-568 ◽  
Author(s):  
Alexander A. Lebedev ◽  
A.E. Belyaev ◽  
N.S. Boltovets ◽  
V.N. Ivanov ◽  
Raisa V. Konakova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Phase Composition ◽  
Heat Resistance ◽  
Contact Structure ◽  
Schottky Barriers ◽  
Electrophysical Properties ◽  
Depth Profiles ◽  
Contact Metallization ◽  
Before And After ◽  
Concentration Depth Profiles

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

Quantitative Phase-Composition Analysis of Liquid-Phase-Sintered Silicon Carbide Using the Rietveld Method

2004 ◽  
Vol 83 (9) ◽  
pp. 2282-2286 ◽  
Author(s):  
Angel L. Ortiz ◽  
Francisco L. Cumbrera ◽  
Florentino Sánchez-Bajo ◽  
Fernando Guiberteau ◽  
Huiwen Xu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Phase Composition ◽  
Liquid Phase ◽  
Rietveld Method ◽  
Composition Analysis ◽  
Quantitative Phase ◽  
Phase Composition Analysis ◽  
Sintered Silicon

Oxynitridation of cubic silicon carbide (100) surfaces

1999 ◽  
Vol 17 (5) ◽  
pp. 2629-2633 ◽  
Author(s):  
F. Amy ◽  
L. Douillard ◽  
V. Yu. Aristov ◽  
P. Soukiassian
Keyword(s):  
Silicon Carbide ◽  
Cubic Silicon Carbide
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