A novel TLP bonding based on sub-micron Ga particles

2019 ◽  
Author(s):  
Shih-kang Lin ◽  
Hseng-ming Liao ◽  
Che-yu Yeh ◽  
Chih-han Yang
Keyword(s):  
Tlp Bonding

Transient liquid phase (TLP) bonding of TiAl/Ti6242 with Ti–Cu foil

2004 ◽  
Vol 9 (6) ◽  
pp. 525-531 ◽  
Author(s):  
H. Duan ◽  
M. Koçak ◽  
K.-H. Bohm ◽  
V. Ventzke
Keyword(s):  
Liquid Phase ◽  
Transient Liquid Phase ◽  
Tlp Bonding ◽  
Cu Foil

scholarly journals Effect of Ni3Sn4 on the Thermo-Mechanical Fatigue Life of Solder Joints in 3D IC

2021 ◽  
Vol 8 ◽  
Author(s):  
Liang Zhang ◽  
Su-Juan Zhong
Keyword(s):  
Shear Stress ◽  
Diffusion Coefficient ◽  
Fatigue Life ◽  
Solder Joints ◽  
Fe Simulation ◽  
Transient Liquid Phase ◽  
Bonding Time ◽  
3D Integration ◽  
Mechanical Fatigue ◽  
Tlp Bonding

In this article, the 3D integration with Ni/Sn/Ni joints was conducted using transient liquid phase (TLP) bonding (250°C, 0.2 N) with different bonding time. After TLP bonding, plane-type Ni3Sn4 intermetallic compound (IMC) was observed, and when the bonding time is 180 min, complete Ni3Sn4 was found. The diffusion coefficient D was determined to be 32.4 μm2/min. Based on the finite element (FE) simulation, the results demonstrated that the shear stress and equivalent creep strain increased obviously with an increase in the IMC thickness; the results calculated show that the IMC thickness impacts the fatigue life of solder joints significantly, and the fatigue life decreases notably with an increase in the Ni3Sn4 thickness.

TLP Bonding Technologies for Micro Joining and 3D Packaging

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001221-001252 ◽  
Author(s):  
Kei Murayama ◽  
Mitsuhiro Aizawa ◽  
Mitsutoshi Higashi
Keyword(s):  
High Temperature ◽  
Melting Point ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Tlp Bonding ◽  
Hermetic Sealing ◽  
Low Temperature Bonding ◽  
Free Material ◽  
Bonding Technique

The bonding technique for High density Flip Chip(F.C.) packages requires a low temperature and a low stress process to have high reliability of the micro joining ,especially that for sensor MEMS packages requires hermetic sealing so as to ensure their performance. The Transient Liquid Phase (TLP) bonding, that is a kind of diffusion bonding is a technique that connects the low melting point material such as Indium to the higher melting point metal such as Gold by the isothermal solidification and high-melting-point intermetallic compounds are formed. Therefore, it is a unique joining technique that can achieve not only the low temperature bonding and also the high temperature reliability. The Gold-Indium TLP bonding technique can join parts at 180 degree C and after bonding the melting point of the junction is shifted to more than 495 degree C, therefore itfs possible to apply the low temperature bonding lower than the general use as a lead free material such as a SAC and raise the melting point more than AuSn solder which is used for the high temperature reliability usage. Therefore, the heat stress caused by bonding process can be expected to be lowered. We examined wafer bonding and F.C bonding plus annealing technique by using electroplated Indium and Gold as a joint material. We confirmed that the shear strength obtained at the F.C. bonding plus anneal technique was equal with that of the wafer bonding process. Moreover, it was confirmed to ensure sufficient hermetic sealing in silicon cavity packages that had been bonded at 180 degree C. And the difference of the thermal stress that affect to the device by the bonding process was confirmed. In this paper, we report on various possible application of the TLP bonding.

Sign in / Sign up

Export Citation Format

Share Document