scholarly journals Effect of gamma irradiation on structural, morphological and optical properties of p-quaterphenyl thin films

2018 ◽  
Vol 14 (2) ◽  
pp. 5624-5637
Author(s):  
A.A. Attia ◽  
M.M. Saadeldin ◽  
K. Sawaby
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Surface Morphology ◽  
Absorption Coefficient ◽  
Gamma Irradiation ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation Method ◽  
Single Oscillator Model

Para-quaterphenyl thin films were deposited onto glass and quartz substrates by thermal evaporation method. p-quaterphenyl thin films wereexposed to gamma radiation of Cobat-60 radioactive source at room temperature with a dose of 50 kGy to study the effect of ?-irradiation onthe structure and the surface morphology as well as the optical properties of the prepared films. The crystalline structure and the surface morphology of the as-deposited and ?-irradiated films were examined using the X-ray diffraction and the field emission scanning electron microscope. The optical constants (n & k) of the as-deposited and ?-irradiated films were obtained using the transmittance and reflectance measurements, in the wavelength range starting from 250 up to 2500 nm. The analysis of the absorption coefficient data revealed an allowed direct transition with optical band gap of 2.2 eV for the as-deposited films, which decreased to 2.06 eV after exposing film to gamma irradiation. It was observed that the Urbach energy values change inversely with the values of the optical band gap. The dispersion of the refractive index was interpreted using the single oscillator model. The nonlinear absorption coefficient spectra for the as-deposited and ?-irradiated p-quaterphenyl thin films were obtained using the linear refractive index.

Effects of Nitrogen Doping on Optical Properties of Tungsten Oxide Thin Films

2012 ◽  
Vol 616-618 ◽  
pp. 1773-1777
Author(s):  
Xi Lian Sun ◽  
Hong Tao Cao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Tungsten Oxide ◽  
Nitrogen Doping ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Tungsten Oxide Thin Films

In depositing nitrogen doped tungsten oxide thin films by using reactive dc pulsed magnetron sputtering process, nitrous oxide gas (N2O) was employed instead of nitrogen (N2) as the nitrogen dopant source. The nitrogen doping effect on the structural and optical properties of WO3 thin films was investigated by X-ray diffraction, transmission electron microscopy and UV-Vis spectroscopy. The thickness, refractive index and optical band gap energy of these films have been determined by analyzing the SE spectra using parameterized dispersion model. Morphological images reveal that the films are characterized by a hybrid structure comprising nanoparticles embeded in amorphous matrix and open channels between the agglomerated nanoparticles. Increasing nitrogen doping concentration is found to decrease the optical band gap energy and the refractive index. The reduced band gaps are associated with the N 2p orbital in the N-doped tungsten oxide films.

scholarly journals Conductivity and Density of States of New Polyphenylquinoline

Polymers ◽  
2019 ◽  
Vol 11 (6) ◽  
pp. 934 ◽  
Author(s):  
Shamil R. Saitov ◽  
Dmitriy V. Amasev ◽  
Alexey R. Tameev ◽  
Vladimir V. Malov ◽  
Marine G. Tedoradze ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Band Gap ◽  
Density Of States ◽  
Optical Band Gap ◽  
Dark Conductivity ◽  
Localized States ◽  
Energy Distance ◽  
Temperature Dependences

Electrical, photoelectrical, and optical properties of thin films of a new heat-resistant polyphenylquinoline synthesized using facile methods were investigated. An analysis of the obtained temperature dependences of the dark conductivity and photoconductivity indicates the hopping mechanism of conductivity over localized states arranging at the energy distance of 0.8 eV from the Fermi level located inside the band gap of the investigated material. The optical band gap of the studied material was estimated from an analysis of the spectral dependences of the photoconductivity and absorption coefficient before (1.8–1.9 eV) and after (2.0–2.2 eV) annealing at temperatures exceeding 100 °C. The Gaussian character of the distribution of the localized states of density inside the band gap near the edges of the bands was established. A mechanism of changes in the optical band gap of the investigating polymer under its annealing is proposed.

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

scholarly journals Effect of thickness on the optical properties of Gaas thin films

2013 ◽  
Vol 37 (1) ◽  
pp. 83-91 ◽  
Author(s):  
Chitra Das ◽  
Jahanara Begum ◽  
Tahmina Begum ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Band Gap ◽  
Optical Band Gap ◽  
Visible Region ◽  
Solar Spectrum ◽  
Band Gap Energy ◽  
Optical Parameters ◽  
Gap Energy

Effect of thickness on the optical and electrical properties of gallium arsenide (GaAs) thin films were studied. The films of different thicknesses were prepared by vacuum evaporation method (~10-4 Pa) on glass substrates at a substrate temperature of 323 K. The film thickness was measured in situ by a frequency shift of quartz crystal. The thicknesses were 250, 300 and 500 nm. Absorption spectrum of this thin film had been recorded using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300 - 2500 nm. The values of some important optical parameters of the studied films (absorption coefficient, optical band gap energy and refractive index; extinction co-efficient and real and imaginary parts of dielectric constant) were determined using these spectra. Transmittance peak was observed in the visible region of the solar spectrum. Here transmittance showed better result when thicknesses were being increased. The optical band gap energy was decreased by the increase of thickness. The refractive index increased by increasing thickness while extinction co-efficient and real and imaginary part of dielectric constant decreased. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15684 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 83-91, 2013

scholarly journals Preparation and Studying the Optical Properties of (Sb2o3) Thin Films

2018 ◽  
Vol 26 (10) ◽  
pp. 249-256
Author(s):  
Waleed Khalid Kadhim
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Thermal Evaporation ◽  
Glass Slide ◽  
Antimony Trioxide ◽  
Hot Plate ◽  
Different Thickness

In this paper I present the preparation of (Sb2o3) thin films using thermal evaporation in vacuum, procedure with different thickness  (100 ,150 ,200 ,and 250) nm, by using ( hot plate) from Molybdenum matter at temperature in ( 9000c) and the period of time (15mint) ,the prepared in a manner thermal evaporation in a vacuum and precipitated on glass bases, pure Antimony Trioxide (sb2o3 ) thin films with various condition have been successfully deposited by (T.E.V) on glass slide substrates. The substrates temperature of about 100oC and the vacuum of about 10-6 torr, to investigated oxidation of evaporated, measure spectra for prepared films in arrange of wavelength (250 – 1100 nm). The following optical properties have been calculated: the absorption coefficient, the forbidden (Eg) for direct and indirect transitions "absorbance, refractive index,  extinction coefficient, real and imaginary parts" of the dielectric constant.

scholarly journals Deposition Time induced Structural and Optical Properties of Lead Tin Sulphide Thin Films

2021 ◽  
pp. 455-458
Author(s):  
J. Damisa ◽  
J. O. Emegha ◽  
I. L. Ikhioya
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Tin Oxide ◽  
Deposition Time ◽  
Deposition Process ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Prepared Material

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.

scholarly journals Annealing Effect on Some Optical Properties of Cr2O3 Thin Films Prepared by Spray Pyrolysis Technique

2011 ◽  
Vol 8 (2) ◽  
pp. 561-565
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Spray Pyrolysis ◽  
Annealing Temperature ◽  
Spray Pyrolysis Technique ◽  
Annealing Effect ◽  
Before And After

Cr2O3 thin films have been prepared by spray pyrolysis on a glass substrate. Absorbance and transmittance spectra were recorded in the wavelength range (300-900) nm before and after annealing. The effects of annealing temperature on absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant and optical conductivity were expected. It was found that all these parameters increase as the annealing temperature increased to 550°C.

Optical Properties of NiO Thin Films: A Potential Material for Optoelectronic Devices

2012 ◽  
Vol 488-489 ◽  
pp. 103-108 ◽  
Author(s):  
Manisha Tyagi ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Band Gap ◽  
Urbach Energy ◽  
Rf Sputtering ◽  
Blue Shift ◽  
Structural Disorder ◽  
Near Ir

The influence of substrate temperature on the UV-Visible-near-IR optical properties, namely the band gap, the Urbach energy and the refractive index of NiO thin films deposited by RF sputtering has been investigated. The optical band gap of thin films showed the blue-shift in the transmission spectra with increase in the substrate temperature which is related to variation in carrier concentration of the deposited films. Urbach energy (EU) values indicate that the films deposited at 400 oC substrate temperature show least structural disorder. The refractive index of the films is found to decrease continuously with increase in the substrate temperature at all photon energies in the visible and near-IR region, and is attributed to the decreasing packing density of the films. Introduction

scholarly journals Studies on the Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films

2007 ◽  
Vol 4 (2) ◽  
pp. 255-264 ◽  
Author(s):  
Benny Joseph ◽  
C. S. Menon
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Band Gap ◽  
Electron Micrographs ◽  
Optical Band Gap ◽  
Scanning Electron Micrographs ◽  
Nickel Phthalocyanine ◽  
Glass Substrates ◽  
Substrate Temperatures ◽  
Scanning Electron

Thin films of Nickel Phthalocyanine (NiPc) are fabricated at a base pressure of 10-5m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. Present studies reveal that the optical band gap energies of NiPc thin films are highly dependent on the substrate temperatures. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM), show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM) intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are fiber like at high substrate temperatures. The optical band gap increases with increase in substrate temperature and is then reduced with fiber-like grains at 408K. The band gap increases again at 458K with full of fiber like grains. Trap energy levels are also observed for these films.

Investigative Study of Optical Parameters of Se80.5Bi1.5Te18-yAgy Thin Films

2012 ◽  
Vol 710 ◽  
pp. 739-744 ◽  
Author(s):  
Anup Kumar ◽  
Pawan Heera ◽  
P. B Baraman ◽  
Raman Sharma
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Integrated Circuits ◽  
Band Gap ◽  
Communication Systems ◽  
Optical Band Gap ◽  
Optical Parameters ◽  
Optical Integrated Circuits ◽  
Increase With Increase ◽  
Good Transparency

The optical constants, like absorption coefficient (α), optical band gap (Eg) and refractive index (n), in Se80.5Bi1.5Te18-yAgy (y= 0, 1.0 and1.5) thin films are calculated using well known Swanepoel’s method in the spectral range of 600-2000 nm. The optical band gap has been estimated by using Tauc’s extrapolation method and is found to increase with increase in Ag content. The present results shows that the large value of nonlinear refractive index and good transparency of these thin films will make them a very promising materials for optical integrated circuits in the optical communication systems.

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