scholarly journals Functional nano-structuring of thin silicon nitride membranes

2020 ◽  
Vol 71 (2) ◽  
pp. 127-130
Author(s):  
Milan Matějka ◽  
Stanislav Krátký ◽  
Tomáš Řiháček ◽  
Alexandr Knápek ◽  
Vladimír Kolařík
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Single Crystal Silicon ◽  
Nitride Layer ◽  
Functional Layer ◽  
Crystal Silicon ◽  
Mask Layer ◽  
Application Potential ◽  
Silicon Frame

AbstractThe paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes.

Microstructure of buried nitride films in silicon formed by implanted nitrogen

1986 ◽  
Vol 44 ◽  
pp. 734-735
Author(s):  
A. K. Datye ◽  
S. S. Tsao ◽  
D. R. Myers
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Amorphous Layer ◽  
Nitride Layer ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Defective Surface

High fluence ion implantation of nitrogen ions in silicon is currently of great interest in the formation of silicon on insulator (SOI) structures. After ion implantation, the single crystal silicon water usually exhibits a highly defective surface layer followed by an amorphous layer corresponding to the peak of the nitrogen implant profile. Annealing the sample at ∽ 1200 C yields a buried layer of silicon nitride underneath a top layer of single crystal silicon. The Quality of the single crystal silicon, buried nitride and the silicon/silicon nitride interface is of paramount importance from the standpoint of device design. We have used high resolution cross section TEM to examine the Si/nitride interface and the buried nitride layer.

The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition

1994 ◽  
Vol 9 (9) ◽  
pp. 2341-2348 ◽  
Author(s):  
K.J. Grannen ◽  
F. Xiong ◽  
R.P.H. Chang
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Crystal Silicon ◽  
Microscopy Imaging ◽  
Crystalline Films

Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 °C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the α and β phases. Scanning electron microscopy imaging indicates β-Si3N4 possesses sixfold symmetry with particle sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 μm/h as determined by profilometry. A growth mechanism for both cases is proposed.

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor

1988 ◽  
Vol 131 ◽  
Author(s):  
Wei Lee ◽  
Leonard V. Interrante ◽  
Corrina Czekaj ◽  
John Hudson ◽  
Klaus Lenz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Crystal Silicon ◽  
Organometallic Precursor ◽  
Pressure Chemical ◽  
By Products

ABSTRACTDense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor, MeHSiCH2SiCH2Me(CH2SiMeH2). At deposition temperatures between 700 and 800° C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(lll) substrate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed.

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