NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GaAs

1971 ◽  
Vol 18 (1) ◽  
pp. 16-18 ◽  
Author(s):  
J. A. Borders
Keyword(s):  
Optical Absorption ◽  
Ion Implantation ◽  
Band Edge ◽  
Near Band Edge

Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

Open Physics ◽  
2008 ◽  
Vol 6 (2) ◽  
Author(s):  
Limin Zhang ◽  
Xiaodong Zhang ◽  
Wei You ◽  
Zhen Yang ◽  
WenXiu Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Dose Dependence ◽  
Band Edge ◽  
Near Band Edge ◽  
Yellow Luminescence ◽  
C And N ◽  
Intensity Ratios ◽  
The One ◽  
Ion Implanted

AbstractThe effects of Si, O, C and N ion implantation with different implantation doses on yellow luminescence (YL) of GaN have been investigated. The as-grown GaN samples used in the work were of unintentional doped n-type, and the photoluminescence (PL) spectra of samples had strong YL. The experimental results showed that YL of ion implanted samples exhibited marked reductions compared to samples with no implantation, while the near band edge (NBE) emissions were reduced to a lesser extent. The deep-level centers associated with YL may be produced in GaN films by O and C ion implantation, and identities of these deep-level centers were analyzed. It was also found that the dose dependence of YL was analogous with the one of the intensity ratios of YL to the near band edge (NBE) emission (I YL/I NBE) for ion implanted samples. The possible reason for this comparability has been proposed.

Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials

2010 ◽  
Vol 312 (19) ◽  
pp. 2705-2709 ◽  
Author(s):  
D. Wang ◽  
S.P. Svensson ◽  
L. Shterengas ◽  
G. Belenky
Keyword(s):  
Optical Absorption ◽  
Band Edge ◽  
Near Band Edge ◽  
Dilute Nitride

TUNING OF THE MAGNETIC FIELD INDUCED SHARP BAND-EDGE OPTICAL ABSORPTION IN EUROPIUM CHALCOGENIDES

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3813-3816 ◽  
Author(s):  
A. B. HENRIQUES ◽  
L. K. HANAMOTO ◽  
E. TER HAAR ◽  
E. ABRAMOF ◽  
A. Y. UETA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Optical Absorption ◽  
Low Temperatures ◽  
Optical Transition ◽  
Band Edge ◽  
Near Band Edge ◽  
High Magnetic Fields ◽  
Sharp Band ◽  
The Magnetic Field

The near band-edge polarized optical optical absortion spectra of EuTe at low temperatures and high magnetic fields were investigated. The samples were grown by MBE on BaF 2 substrates, and the thickness varied in the 0.18-2.0 μm range. At high magnetic fields, the well-known 4f7→4f65d(t2g) optical transition splits into two well resolved lines at σ+ and two lines for σ-. These lines can be described by localized transitions tunable by the d-f exchange interaction, with a quadratic dependence on the intensity of the external magnetic field. Comparative measurements of the magnetization and the optical absorption as a function temperature provides a further test of the model of a localized excitation extending over a few lattice sites.

Optical Absorption and Photoluminescence in Defect-Stannite-Type Semiconductor ZnGa2Se4

2020 ◽  
Vol 38 ◽  
pp. 10-16
Author(s):  
Shunji Ozaki ◽  
Shingo Mukada
Keyword(s):  
Optical Absorption ◽  
Absorption Coefficient ◽  
Temperature Dependence ◽  
Band Gap ◽  
Brillouin Zone ◽  
Band Edge ◽  
Near Band Edge ◽  
Pl Spectra ◽  
Shrinkage Effect ◽  
Type Semiconductor

Optical absorption and photoluminescence (PL) spectra were measured on defect-stannite-type semiconductor ZnGa2Se4 at temperatures T from 11 to 300 K. The square of the absorption coefficient spectra showed distinct two absorption edges, which were E0A,B and E0C,D transitions at Γ point in the Brillouin zone. The temperature dependence of the direct-gap energies, E0A,B and E0C,D, of ZnGa2Se4 were determined and fit using the analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors. The PL emissions at near band-edge and at higher energy than band-edge were also observed at T ≤ 150 K.

Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy

1995 ◽  
Vol 34 (Part 1, No. 1) ◽  
pp. 42-47 ◽  
Author(s):  
Gwo-Cherng Jiang ◽  
Yih Chang ◽  
Liann-Be Chang ◽  
Yung-Der Juang ◽  
SuLu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge

Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region

1996 ◽  
Vol 79 (11) ◽  
pp. 8682-8687 ◽  
Author(s):  
R. A. Hogg ◽  
K. Takahei ◽  
A. Taguchi
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Region ◽  
Photoluminescence Excitation
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