Numerical Analysis of Thermal Stresses in Carbon Films Obtained by the Rf Pecvd Method on the Surface of a Cannulated Screw / Analiza Numeryczna Naprezen Cieplnych W Warstwie Weglowej Otrzymanej W Procesie Rf Pecvd Na Powierzchni Wkreta Kostnego

2013 ◽  
Vol 58 (1) ◽  
pp. 77-81 ◽  
Author(s):  
J. Sawicki ◽  
M. Dudek ◽  
Ł. Kaczmarek ◽  
B. Wiecek ◽  
B. Swiatczak ◽  
...  
Keyword(s):  
Thermal Stresses ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Cannulated Screw ◽  
Radio Frequency Plasma ◽  
Medical Implants ◽  
Total Destruction ◽  
Frequency Plasma ◽  
Deposited Films ◽  
Film Interface

For many years, research on carbon films has been stimulated by the need to simultaneously optimize their biological and mechanical properties and by the challenges related to their deposition on medical implants. The residual mechanical stress occurring inside deposited films is the most important mechanical parameter which leads to the total destruction of these films by cracking and peeling. In the present work, we systematically studied the effect of ion bombardment during the process of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) by monitoring the temperature distribution on a cannulated screw using the infrared technique. The obtained experimental and finite element modeling (FEM) results show that stresses in carbon films deposited on a cannulated screw are quite inhomogeneous and depend on the geometry of the sample and the relative position of the studied contact area between the substrate/film interface and the surface of the film.

DEPOSITION OF WIDE BAND GAP DLC FILMS USING R.F. PECVD AT VERY LOW POWER

2011 ◽  
Vol 25 (29) ◽  
pp. 3941-3949 ◽  
Author(s):  
P. K. BARHAI ◽  
RISHI SHARMA ◽  
B. B. NAYAK
Keyword(s):  
Band Gap ◽  
Chemical Vapor ◽  
Wide Band ◽  
Carbon Films ◽  
Wide Band Gap ◽  
Force Microscopy ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Bending Modes ◽  
Deposited Films

Wide band gap diamond-like carbon films (DLCs) are deposited on silicon (1 0 0) substrates using capacitive coupled radio frequency plasma-enhanced chemical vapor deposition (R.F. PECVD) technique. The deposition of films is carried out at a constant pressure (~5×10-2 mbar ) using acetylene precursor diluted with argon at constant R.F. power of 5 W. Raman spectroscopy of deposited DLC films shows broad G peak near 1550 cm-1 and a weak D peak near 1320 cm1. FTIR plot of DLC films shows a peak near 2900 cm-1 corresponding to C–H stretching mode and peaks below 2000 cm-1 corresponding to C–C modes and C–H bending modes. Maximum hardness of the deposited films is found to be ~15 GPa. Band gap of the DLC films is ~3.5 eV. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) pictures show that the deposited films are amorphous. Deposition mechanism of wide band gap DLC film is explained on the basis of subplantation model.

CHARACTERISTICS OF DLC FILMS INCORPORATED HMDS BY RF PECVD

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2999-3004 ◽  
Author(s):  
TAE GYU KIM ◽  
JEONG SEOK OH ◽  
HAN KI YOON ◽  
HYE SUNG KIM
Keyword(s):  
High Speed ◽  
High Speed Steel ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Chemical Vapor Deposition Method ◽  
Radio Frequency Plasma ◽  
Silicon Doping ◽  
Bonding Structure ◽  
Bonding Ratio ◽  
Frequency Plasma

Silicon incorporated diamond-like carbon films up to 6.2 at. % (DLC- Si ) were deposited onto a high speed steel samples by using a radio frequency plasma-enhanced chemical vapor deposition method. The influence of silicon doping on chemical composition, bonding structure, hardness, and adhesion of DLC films was investigated. Hexamethyldisilane ( HMDS ) gas was used as a silicon source with Ar carrier gas ranging from 0 to 15 sccm. Also, the mixtures of methane ( CH 4) and Ar gases were used as precursor gases. The addition of silicon into the DLC film was found to lead an increase of bonding ratio ( sp 3/ sp 2), hardness and critical adhesion

EFFECT OF GAS PRESSURE ON THE BORON-DOPED HYDROGENATED AMORPHOUS CARBON THIN FILMS GROWN BY RADIO FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

2006 ◽  
Vol 13 (01) ◽  
pp. 7-12 ◽  
Author(s):  
M. RUSOP ◽  
S. ABDULLAH ◽  
J. PODDER ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Radio Frequency Plasma ◽  
Boron Doped ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous ◽  
Deposited Films

Boron-doped hydrogenated amorphous carbon ( a-C:B:H ) thin films have been deposited by radio frequency plasma-enhanced chemical vapor deposition (r.f. PECVD) with a frequency of 13.56 MHz at room temperature using pure methane as a precursor of carbon source mixed with hydrogen ( H 2) as a carrier gas. The films were prepared by varying the r.f. power, different gas flow rates of CH 4, and partial pressure of mixed gas ( CH 4/ H 2) using boron as a solid target. The thickness, structural bonding, and optical properties of the as-deposited films were studied by Alpha-step surface profiler, Raman spectroscopy (Raman), Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and UV–visible spectroscopy. It was found that changing the deposition pressure in addition of using solid boron target in the r.f. PECVD process has a profound effect on the properties of the deposited films as evidenced from their Raman scattering and optical results. The grown a-C:B:H films were found to be smooth and their thicknesses were in the range of 200 to 400 nm for 1 h of deposition time. Films deposited at lower pressure appear brownish in color, whereas those deposited at higher pressure appear pale yellowish. The as-deposited film was found to be dominated by trigonal (sp2) rather than tetrahedral (sp3), which might be due to the formation of small crystallites. The optical band gap is found to be reduced from 2.60 to 1.62 eV as the partial pressure of CH 4/ H 2 gas is reduced.

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