Investigation on the reliability of board-level interconnection under the thermal cycle loading

Author(s):  
Liqiang Zhang ◽  
Zhaohua Wu ◽  
Dongjing Liu ◽  
Xiaoming Yuan ◽  
Zhibao Li
Metals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 518 ◽  
Author(s):  
Congcong Cao ◽  
Keke Zhang ◽  
Baojin Shi ◽  
Huigai Wang ◽  
Di Zhao ◽  
...  

The interface microstructure and shear strength of Sn2.5Ag0.7Cu0.1RExNi/Cu solder joints under thermal-cycle loading were investigated with scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and physical and chemical tests. The results show that an intermetallic compound (IMC) layer of Sn2.5Ag0.7Cu0.1RExNi/Cu solder joints evolved gradually from the scalloped into larger wavy forms with increasing number of thermal cycles. The roughness and average thickness of IMC increased with thermal-cycle loading. However, at longer thermal-cycle loading, the shear strength of the joints was reduced by about 40%. The fracture pathway of solder joints was initiated in the solder seam with ductile fracture mechanism and propagated to the solder seam/IMC layer with ductile-brittle mixed-type fracture mechanism, when the number of thermal cycles increased from 100 to 500 cycles. By adding 0.05 wt.% Ni, the growth of the joint interface IMC could be controlled, and the roughness and average thickness of the interfacial IMC layer reduced. As a result, the shear strength of joints is higher than those without Ni. When compared to joint without Ni, the roughness and average thickness of 0.05 wt.% Ni solder joint interface IMC layer reached the minimum after 500 thermal cycles. The shear strength of that joint was reduced to a minimum of 36.4% of the initial state, to a value of 18.2 MPa.


2014 ◽  
Vol 941-944 ◽  
pp. 1629-1632 ◽  
Author(s):  
Ye Sheng Zhong ◽  
Li Ping Shi ◽  
Ming Wei Li ◽  
Jia Yu ◽  
Jian Han Liang ◽  
...  

A numerical study using finite element analysis (FEA) was performed to investigate the thermal, shear and radial stresses developed in MAO coating on substrate of TC4 under thermal cycle loading. The four-node quadrilateral thermal solid element PLANE55 and four-node quadrilateral structural solid element PLANE42 with axisymmetric option was used to model the temperature distribution and thermal stress field of the MAO coating on TC4 substrates. The thermal stress, radial stress and shear stress along the thickness in film/substrate system are analyzed systematically under different thermal cycle loading. It is found that the thermal stress of MAO coating exhibits a linear relationship with thickness of substrate, but it exhibit a parabolic relationship with the thickness of the coating. The radial stress and shear stress distribution of the coating–substrate combination are also calculated. It is observed that high tensile shear stress of MAO coating on TC4 substrate reduces its adhesive strength but high-compressive shear stress improves its adhesive strength.


2001 ◽  
Vol 2001 (0) ◽  
pp. 507-508
Author(s):  
Shinji OGIHARA ◽  
Takamoto ISHIGURO ◽  
Nobuo TAKEDA ◽  
Akira KOBAYASHI

2004 ◽  
Vol 126 (1) ◽  
pp. 94-99 ◽  
Author(s):  
Bulu Xu ◽  
Xia Cai ◽  
Weidong Huang ◽  
Zhaonian Cheng

Fracture mechanics approaches have been used to study reliability problems in electronic packages, in particular, adhesion related failure in flip chip assembly. It was verified in this work that the J-integral with a special flat rectangular contour near the crack tip can be used as energy release rate at the interface between chip and underfill. Meanwhile, the delamination propagation rates at the interface was measured by using C-mode scanning acoustic microscope (C-SAM) inspection for two types of flip chip packages under thermal cycle loading. Finally, the half-empirical Paris equation, which can be used as a design base of delamination reliability in flip chip package, has been determined from the crack propagation rates measured and the energy release rates simulated.


2002 ◽  
Vol 28 (3) ◽  
pp. 93-102 ◽  
Author(s):  
Shinji OGIHARA ◽  
Takamoto ISHIGURO ◽  
Akihiro MUTO ◽  
Satoshi KOBAYASHI ◽  
Nobuo TAKEDA ◽  
...  

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