scholarly journals Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

2020 ◽  
Author(s):  
Petro Deminskyi ◽  
Chih-Wei Hsu ◽  
Babak Bakhit ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Amorphous Films ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Surface Ligand ◽  
Reactive Pulse

Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 °C, low-temperature routes for GaN deposition need to be better understood. Herein, we present an atomic layer deposition (ALD) process for GaN-based on triethyl gallium (TEG) and ammonia plasma and show that the process can be improved by adding a reactive pulse between the TEG and ammonia plasma, making it an ABC-type pulsed process. We show that the material quality of the deposited GaN is not affected by the B-pulse, but that the film growth per ALD cycle increase when a B-pulse is added. We suggest that this can be explained by removal of ethyl ligands from the surface by the B-pulse, enabling a more efficient nitridation by the ammonia plasma. We show that the B-pulsing can be used to enable GaN deposition with a thermal ammonia pulse, albeit of X-ray amorphous films.

scholarly journals Surface Ligand Removal in Atomic Layer Deposition of GaN Using Triethylgallium

2020 ◽  
Author(s):  
Petro Deminskyi ◽  
Chih-Wei Hsu ◽  
Babak Bakhit ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Amorphous Films ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Surface Ligand ◽  
Reactive Pulse

Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 °C, low-temperature routes for GaN deposition need to be better understood. Herein, we present an atomic layer deposition (ALD) process for GaN-based on triethyl gallium (TEG) and ammonia plasma and show that the process can be improved by adding a reactive pulse between the TEG and ammonia plasma, making it an ABC-type pulsed process. We show that the material quality of the deposited GaN is not affected by the B-pulse, but that the film growth per ALD cycle increase when a B-pulse is added. We suggest that this can be explained by removal of ethyl ligands from the surface by the B-pulse, enabling a more efficient nitridation by the ammonia plasma. We show that the B-pulsing can be used to enable GaN deposition with a thermal ammonia pulse, albeit of X-ray amorphous films.

Chemical Vapor Deposition of Ti-Si-N Films with Alternating Source Supply

1999 ◽  
Vol 564 ◽  
Author(s):  
Jae-Sik Min ◽  
Hyung-Sang Park ◽  
Wonyong Koh ◽  
Sang-Won Kang
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Precise Control ◽  
Silicon Nitride Films ◽  
Layer Deposition ◽  
Si Content ◽  
Titanium Silicon Nitride ◽  
Titanium Silicon

AbstractTitanium-silicon-nitride films were grown by atomic layer deposition using an alternating supply of tetrakis(dimethylamido)titanium (TDMAT), silane. and ammonia, at substrate temperature of 180°C. The supply of a reactant was followed by a purge with inert gas before introducing another reactant onto the substrate in order to prevent gas-phase reactions. In one set of experiments the reactants were supplied separately in the sequence of TDMAT. silane. and ammonia. The Si content of the films remained constant at 18 at.%. and the film growth rate varied little from 0.24 nm per reactant-supply-cycle, even though silane partial pressure varied from 0.002 to 0.1 torr. In the other set of experiments silane and ammonia were simultaneously supplied in the sequence of TDMAT and silane/ammonia. The Si content varied from 3 to 23 at.% as the silane-to-ammonia ratio varied from 0.01 to 10. Atomic layer deposition of Ti-Si-N films allows the precise control of Si content as well as film thickness.

scholarly journals Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 406 ◽  
Author(s):  
Heli Seppänen ◽  
Iurii Kim ◽  
Jarkko Etula ◽  
Evgeniy Ubyivovk ◽  
Alexei Bouravleuv ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Organic Chemical ◽  
Layer Deposition ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.

Crystallization behaviors of ultrathin Al-doped HfO 2 amorphous films grown by atomic layer deposition

2017 ◽  
Vol 26 (2) ◽  
pp. 027701 ◽  
Author(s):  
Xue-Li Ma ◽  
Hong Yang ◽  
Jin-Juan Xiang ◽  
Xiao-Lei Wang ◽  
Wen-Wu Wang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Amorphous Films ◽  
Crystallization Behaviors ◽  
Layer Deposition

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

scholarly journals Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 5 ◽  
Author(s):  
César Masse de la Huerta ◽  
Viet Nguyen ◽  
Jean-Marc Dedulle ◽  
Daniel Bellet ◽  
Carmen Jiménez ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atomic Layer Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Dynamics Simulation ◽  
Selective Deposition ◽  
Temporal Separation ◽  
Present Contribution ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition

Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

scholarly journals Surface ligand removal in atomic layer deposition of GaN using triethylgallium

2021 ◽  
Vol 39 (1) ◽  
pp. 012411
Author(s):  
Petro Deminskyi ◽  
Chih-Wei Hsu ◽  
Babak Bakhit ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Surface Ligand
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