Aluminum Dihydride Complexes and their Unexpected Application in Atomic Layer Deposition of Titanium Carbonitride Films

Film Growth ◽

High Growth ◽

Atomic Layer ◽

Grazing Incidence ◽

High Growth Rate ◽

Titanium Carbonitride ◽

X Ray ◽

Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD). Highly volatile monomeric complexes AlH2(tBuNCH2CH2NMe2) and AlH2(tBuNCH2CH2NC4H8) are more thermally stable than common Al hydride thin film precursors such as AlH3(NMe3). ALD film growth experiments using TiCl4 and AlH2(tBuNCH2CH2NMe2) produced titanium carbonitride films with a high growth rate of 1.6-2.0 Å/cycle and resistivities around 600 μΩ·cm within a very wide ALD window of 220-400 °C. Importantly, film growth proceeded via self-limited surface reactions, which is the hallmark of an ALD process. Root mean square surface roughness was only 1.3 % of the film thickness at 300 °C by atomic force microscopy. The films were polycrystalline with low intensity, broad reflections corresponding to the cubic TiN/TiC phase according to grazing incidence X-ray diffraction. Film composition by X-ray photoelectron spectroscopy was approximately TiC0.8N0.5 at 300 °C with small amounts of Al (6 at%), Cl (4 at%) and O (4 at%) impurities. Remarkably, self-limited growth and low Al content was observed in films deposited well above the solid-state thermal decomposition point of AlH2(tBuNCH2CH2NMe2), which is ca. 185 °C. Similar growth rates, resistivities, and film compositions were observed in ALD film growth trials using AlH2(tBuNCH2CH2NC4H8).

Atomic Layer Deposition of TiN below 600 K Using N2H4

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.282.232 ◽

2018 ◽

Vol 282 ◽

pp. 232-237

Author(s):

Adam Hinckley ◽

Anthony Muscat

Keyword(s):

Growth Rate ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Film Growth ◽

Detection Limits ◽

Atomic Layer ◽

Volatile Species ◽

X Ray ◽

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

RBS and NRA analysis for films with high growth rate prepared by atomic layer deposition

10.1016/j.nimb.2020.12.015 ◽

2021 ◽

Vol 489 ◽

pp. 20-25

Author(s):

B. Xia ◽

J.J. Ganem ◽

S. Steydli ◽

H. Tancrez ◽

I. Vickridge

Keyword(s):

Growth Rate ◽

Atomic Layer Deposition ◽

High Growth ◽

Atomic Layer ◽

High Growth Rate ◽

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽

10.3390/molecules25215043 ◽

2020 ◽

Vol 25 (21) ◽

pp. 5043

Author(s):

Chia-Hsun Hsu ◽

Xin-Peng Geng ◽

Wan-Yu Wu ◽

Ming-Jie Zhao ◽

Xiao-Ying Zhang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Band Gap ◽

High Speed ◽

Oxygen Vacancies ◽

Annealing Temperature ◽

Atomic Layer ◽

Zno Films ◽

X Ray ◽

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

High Growth Rate SiO2 by Atomic Layer Deposition

ECS Transactions ◽

10.1149/1.2911529 ◽

2019 ◽

Vol 13 (1) ◽

pp. 453-457 ◽

Cited By ~ 4

Author(s):

Raija Matero ◽

Suvi Haukka ◽

Marko Tuominen

Keyword(s):

Growth Rate ◽

Atomic Layer Deposition ◽

High Growth ◽

Atomic Layer ◽

High Growth Rate ◽

Structure-Dependent Mechanical Properties of ALD-Grown Nanocrystalline BiFeO3Multiferroics

Journal of Nanomaterials ◽

10.1155/2016/5348471 ◽

2016 ◽

Vol 2016 ◽

pp. 1-7 ◽

Cited By ~ 4

Author(s):

Anna Majtyka ◽

Anna Nowak ◽

Benoît Marchand ◽

Dariusz Chrobak ◽

Mikko Ritala ◽

...

Keyword(s):

Mechanical Properties ◽

Present Report ◽

Structural Evolution ◽

Atomic Layer ◽

Grazing Incidence ◽

X Ray Diffraction ◽

X Ray ◽

Layer Deposition ◽

Pertinent Information

The present paper pertains to mechanical properties and structure of nanocrystalline multiferroic BeFiO3(BFO) thin films, grown by atomic layer deposition (ALD) on the Si/SiO2/Pt substrate. The usage of sharp-tip-nanoindentation and multiple techniques of structure examination, namely, grazing incidence X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and energy dispersive X-ray spectrometry, enabled us to detect changes in elastic properties(95 GPa≤E≤118 GPa)and hardness(4.50 GPa≤H≤7.96 GPa)of BFO after stages of annealing and observe their relation to the material’s structural evolution. Our experiments point towards an increase in structural homogeneity of the samples annealed for a longer time. To our best knowledge, the present report constitutes the first disclosure of nanoindentation mechanical characteristics of ALD-fabricated BeFiO3, providing a new insight into the phenomena that accompany structure formation and development of nanocrystalline multiferroics. We believe that our systematic characterization of the BFO layers carried out at consecutive stages of their deposition provides pertinent information which is needed to control and optimize its ALD fabrication.

Porous Silicon-Zinc Oxide Nanocomposites Prepared by Atomic Layer Deposition for Biophotonic Applications

Materials ◽

10.3390/ma13081987 ◽

2020 ◽

Vol 13 (8) ◽

pp. 1987 ◽

Cited By ~ 3

Author(s):

Mykola Pavlenko ◽

Valerii Myndrul ◽

Gloria Gottardi ◽

Emerson Coy ◽

Mariusz Jancelewicz ◽

...

Keyword(s):

Zinc Oxide ◽

Optical Properties ◽

Porous Silicon ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Visible Range ◽

Optical Biosensing ◽

X Ray ◽

In the current research, a porous silicon/zinc oxide (PSi/ZnO) nanocomposite produced by a combination of metal-assisted chemical etching (MACE) and atomic layer deposition (ALD) methods is presented. The applicability of the composite for biophotonics (optical biosensing) was investigated. To characterize the structural and optical properties of the produced PSi/ZnO nanocomposites, several studies were performed: scanning and transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), diffuse reflectance, and photoluminescence (PL). It was found that the ALD ZnO layer fully covers the PSi, and it possesses a polycrystalline wurtzite structure. The effect of the number of ALD cycles and the type of Si doping on the optical properties of nanocomposites was determined. PL measurements showed a “shoulder-shape” emission in the visible range. The mechanisms of the observed PL were discussed. It was demonstrated that the improved PL performance of the PSi/ZnO nanocomposites could be used for implementation in optical biosensor applications. Furthermore, the produced PSi/ZnO nanocomposite was tested for optical/PL biosensing towards mycotoxins (Aflatoxin B1) detection, confirming the applicability of the nanocomposites.