Rising of charge stability of gate dielectric of MIS structure by phosphorus doping

2020 ◽  
pp. 68-74
Author(s):  
D. V. Andreev ◽  
◽  
G. G. Bondarenko ◽  
V. V. Andreev ◽  
A. A. Stolyarov ◽  
...  
Keyword(s):  
Silicate Glass ◽  
Energy Barrier ◽  
High Field ◽  
Gate Dielectric ◽  
Sio2 Film ◽  
Mis Structure ◽  
Phosphorus Doping ◽  
Charge Stability ◽  
High Fields ◽  
Injection Currents

In the paper we demonstrate that the thermal doping of SiO2 film by phosphorus, causing formation of thin film of phospho-silicate glass on its surface, allows to rise charge stability of gate dielectric of MIS structure. We have ascertained that a presence of the film of phospho-silicate glass has given a possibility to significantly lower local injection currents flowing within defects because of electron capturing by traps located in the film of phospho-silicate glass what results in the rising of energy barrier. As a result, amount of the structures that comes to a state of breakdown at low values of charge injected into the dielectric under high fields noticeably reduces. We show that heating processes of injected electrons lowers in the films of phospho-silicate glass and this results in increasing of charge stability of the gate dielectric under high-field injection.

Investigation of Injection- and Radiation-Thermal Processes in Thin Gate Dielectric Films of MIS Structures

2018 ◽  
Vol 781 ◽  
pp. 47-52
Author(s):  
Dmitrii Andreev ◽  
Gennady Bondarenko ◽  
Vladimir Andreev ◽  
Alexander Stolyarov
Keyword(s):  
Thermal Treatment ◽  
High Field ◽  
Gate Dielectric ◽  
Dielectric Film ◽  
Dielectric Films ◽  
Mis Structure ◽  
Thermal Processes ◽  
Structure Modification ◽  
Dioxide Film ◽  
Mis Structures

In order to modify the gate dielectric of MIS structures we suggest to implement the injection-thermal treatment which consists in the high-field injection of electrons of set density into the thin dielectric film and the subsequent annealing of the structure. We investigate an influence of modes of the injection-thermal treatment onto the modification of MIS structures. We demonstrate that the processes of MIS structure modification taking place at the injection-thermal treatment in many respects are identical to the processes taking place at the radiation-thermal treatment. We study an influence of modes of the high-field electron injection into the gate dielectric of MIS structure onto densities of charge defects and the injection hardness of samples. Besides, we research an influence of doping of the silicone dioxide film by phosphorus onto the same characteristics.

Oxide wearout phenomena of ultrathin SiO2 film during high-field stress

1992 ◽  
Vol 28 (16) ◽  
pp. 1516 ◽  
Author(s):  
H. Fukuda ◽  
M. Yasuda ◽  
T. Iwabuchi
Keyword(s):  
High Field ◽  
Sio2 Film ◽  
Field Stress

Increasing the Charge Stability of Gate Dielectric Films of MIS Structures by Doping Them with Phosphorus

2021 ◽  
Vol 12 (2) ◽  
pp. 517-520
Author(s):  
D. V. Andreev ◽  
G. G. Bondarenko ◽  
V. V. Andreev ◽  
A. A. Stolyarov
Keyword(s):  
Gate Dielectric ◽  
Dielectric Films ◽  
Charge Stability ◽  
Mis Structures

Improved MR Thermometry to Measure Brain Temperatures

2008 ◽  
Author(s):  
Devashish Shrivastava ◽  
Lance DelaBarre ◽  
Timothy Hanson ◽  
J. Thomas Vaughan
Keyword(s):  
High Field ◽  
Core Body Temperature ◽  
Temperature Response ◽  
Time History ◽  
Rf Heating ◽  
Mr Thermometry ◽  
Ultra High Field ◽  
High Fields ◽  
Rf Safety

An MR thermometry technique with sub-degree celsius accuracy is needed to measure in vivo temperatures vs. time in porcine brains at ultra-high fields. Porcine models are used to study thermoregulatory temperature response of the ultra-high field radiofrequency (RF) heating. The porcine hot critical temperature limit is comparable to and lower than that of humans. Also, porcine thermoregulatory mechanisms are similar to humans. Thus, conservative porcine thermoregulatory temperature responses can help develop new RF safety thresholds for ultra-high field human MRI. Sub-degree C temperature accuracy is needed since RF safety guidelines limit the maximum in vivo head temperature change due to RF heating to 1 °C over the core body temperature. Three-dimensional temperature maps over time are required since non-uniform RF power deposition at ultra-high fields and blood flow produce non-uniform in vivo temperatures with local hot spots. Thermogenic hazards are related to in vivo temperatures and temperature-time history — and not to the typically measured whole head average specific absorption rate.

High-field liquid state NMR hyperpolarization: a combined DNP/NMRD approach

2014 ◽  
Vol 16 (35) ◽  
pp. 18781-18787 ◽  
Author(s):  
Petr Neugebauer ◽  
Jan G. Krummenacker ◽  
Vasyl P. Denysenkov ◽  
Christina Helmling ◽  
Claudio Luchinat ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Magnetic Field ◽  
Dynamic Nuclear Polarization ◽  
Liquid State ◽  
High Field ◽  
Nuclear Polarization ◽  
Nmr Relaxation ◽  
Relaxation Dispersion ◽  
Liquid Solutions ◽  
High Fields

Dynamic nuclear polarization and NMR relaxation dispersion measurements have been performed on liquid solutions of TEMPOL radicals in solvents with different viscosities at a high magnetic field of 9.2 T. The results indicate that fast dynamics significantly contribute to DNP enhancements at high fields.

Effect of a magnetic field on the fluorescence produced in irradiated anthracene solutions

1977 ◽  
Vol 55 (11) ◽  
pp. 2093-2101 ◽  
Author(s):  
R. S. Dixon ◽  
F. P. Sargent ◽  
V. J. Lopata ◽  
E. M. Gardy ◽  
B. Brocklehurst
Keyword(s):  
Magnetic Field ◽  
Fluorescence Intensity ◽  
Applied Magnetic Field ◽  
High Field ◽  
Spin Correlation ◽  
Hydrocarbon Solvents ◽  
Theoretical Predictions ◽  
High Fields ◽  
Ion Recombination ◽  
Gamma Irradiated

The effect of an applied magnetic field on the fluorescence from radiolytic ion recombination has been studied for anthracene in some hydrocarbon solvents. In pulse-irradiated anthracene (10−2 mol dm−3) in squalane, the fluorescence intensity following the pulse increases as a function of applied magnetic field in the range studied, 0 to 0.3 T (0 to 3000 G). At a constant magnetic field strength, the field-induced enhancement of the fluorescence intensity varies with time after the pulse. At high field strengths (0.3 T) the enhancement reaches a maximum of ∼45% about 50 ns after the pulse. Similar effects are observed in cyclohexane but the enhancement is smaller than that in squalane. In benzene solutions the effect is extremely small. These findings are confirmed by observations in continuously gamma-irradiated solutions. In gamma-irradiated solutions of anthracene (10−2 mol dm−3) in squalane, the fluorescence intensity increases with increasing magnetic field and approaches ∼13% enhancement at high fields (>0.1 T). The enhancement is smaller (∼3%) in cyclohexane and very small (<1%) in benzene solutions. 9,10-Dimethylanthracene gives a larger enhancement and anthracene-d10 a smaller enhancement than the parent anthracene at high fields. The results are in general agreement with recent theoretical predictions based on the effect of a magnetic field on the loss of spin correlation of geminate ions pairs prior to recombination.

High-Field Giant Magnetoresistance in Co-Cu Superlattices

1993 ◽  
Vol 313 ◽  
Author(s):  
Darryl Barlett ◽  
Frank Tsui ◽  
Lincoln Lauhon ◽  
Tushar Mandrekar ◽  
Ohrad Uher ◽  
...  
Keyword(s):  
High Field ◽  
Giant Magnetoresistance ◽  
Granular Systems ◽  
Switching Field ◽  
Present Evidence ◽  
Conduction Electrons ◽  
New Type ◽  
High Fields ◽  
Very High ◽  
Cobalt Copper

ABSTRACTWe present evidence for a new type of giant magnetoresistance in (111) cobalt-copper superlattices with atomically smooth interfaces. We propose that the lowered dimensionality of the structure leads to an enhancement of the scattering of conduction electrons from paramagnetic interfaces obeying a Langevin-like saturation at very high fields, well beyond the switching field of the Co layers. The findings help to explain similarities in magnetotransport behavior with recently reported granular systems as well as differences with antiferromagnetically coupled Multilayers.

MAGNETO-OPTICAL ROTATION IN VERY HIGH FIELDS

1960 ◽  
Vol 38 (7) ◽  
pp. 941-944 ◽  
Author(s):  
Richard Stevenson
Keyword(s):  
Magnetic Field ◽  
High Field ◽  
Optical Rotation ◽  
Field Limit ◽  
Electron Theory ◽  
Important Data ◽  
Kerr Rotation ◽  
High Fields ◽  
The Magnetic Field ◽  
Very High

Magneto-optical rotation by transmission through or reflection from solids is examined by the classical free electron theory, with the view of taking such a measurement using fields in the megagauss range. In general the rotation is a markedly non-linear function of the magnetic field, and in some cases can change in sign as the field increases. For very low fields the rotation varies directly with B, but in the high field limit the rotation varies inversely with the field. For substances in which the intercollision time of the electron is small, measurements of the Kerr rotation (i.e. by reflection) will give the electron mobility as a function of the magnetic field, and thus will give important data which can be used in conjunction with high field magnetoresistance experiments.

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