Changes in the electrical conductivity of glass, quartz, Au, C, and MoS2 films under influence of continuous proton injection

2021 ◽  
Vol 10 ◽  
pp. 37-46
Author(s):  
G. S. Burkhanov ◽  
◽  
S. A. Lachenkov ◽  
M. A. Kononov ◽  
A. U. Bashlakov ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Ion Beam ◽  
Test Sample ◽  
Ion Source ◽  
Gold Target ◽  
Glass Substrates ◽  
Wide Range ◽  
Continuous Stream ◽  
Conductivity Of Thin Films

Changes in the electrical conductivity of a wide range of materials with different crystal-chemical types and electrophysical properties (quartz, glass, molybdenum disulfide, graphite, gold) under continuous proton injection are studied. Film samples of layered MoS2 and graphite compounds were obtained on rough surfaces of glass or quartz by mechanical rubbing of powder. Gold films are formed on glass substrates by magnetron sputtering of a gold target. To create a continuous stream of protons injected into the test sample, a stationary ion source with a cold cathode and a magnetic field forming an ion beam of relatively low intensity was used. The current in the ion beam is up to 1.2 mA, the pressure of hydrogen in the chamber is ~10 – 2 Pa, the energy of hydrogen ions is from 1 to 4 keV. The experimental results indicate that under conditions of continuous proton injection, the electrical conductivity of thin films with a layered structure (MoS2 and graphite) increases sharply (by 4 – 5 orders of magnitude). This effect increases when the temperature decreases from ~ 293 to ~ 77 K, as well as when the number of charges supplied to the sample increases. In the case of continuous injection of protons into massive dielectrics (glass, quartz) and thin films of gold, no noticeable change in electrical conductivity was detected.

Optical and Electrical Properties of Ion Beam Effects in Ge10Se70Bi20 Thin Films

2021 ◽  
Author(s):  
M Abdelhamid ◽  
A Abdel Reheem ◽  
N Kassem ◽  
A Ashour
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Data Storage ◽  
Ion Beam ◽  
Optical Data Storage ◽  
Optical Measurements ◽  
Optical Data ◽  
X Ray ◽  
Glass Substrates ◽  
Dc Electrical Conductivity

Abstract In this study, chalcogenide material Ge 10 Se 70 Bi 20 thin films have been fabricated utilizing the thermal evaporation technique of bulk samples on glass substrates. After that, the original Ge 10 Se 70 Bi 20 thin films irradiated by different types of an ion beam. The compositions of the original film was determined by the Energy Dispersive X-Ray (EDX). X-ray diffraction (XRD) measurements were performed to characterize and examine the induced variations in the structure of Ge 10 Se 70 Bi 20 films after irradiation. From the optical measurements, the absorption edge, bandgap, Urbach energy, Tauc parameter, and extinction coefficient of the unirradiated and irradiated films were determined. In particular, the DC electrical conductivity increased by two orders after the pure film was exposed to an oxygen ion beam. Besides, the activation energy and Mott’s parameters for the original and irradiated Ge 10 Se 70 Bi 20 films were deduced. The reported variations in absorption coefficient, optical bandgap, dc electrical conductivity, and Mott’s parameters propose that the irradiated Ge 10 Se 70 B 20 thin films can be used in important applications, e.g., optical data storage and optoelectronic devices.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

MeV Ion-Beam Bombardment Effects on The Thermoelectric Figures of Merit of Zn4Sb3 and ZrNiSn-Based half-heusler compounds

2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
C. C. Smith ◽  
B. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Measurement System ◽  
Ion Beam ◽  
Electrical Energy ◽  
Figures Of Merit ◽  
Material Systems ◽  
The Cross ◽  
Conductivity Of Thin Films

AbstractSemiconducting â-Zn4Sb3and ZrNiSn-based half-heusler compound thin films were prepared by co-evaporation for the application of thermoelectric (TE) materials. High-purity solid zinc and antimony were evaporated by electron beam to grow the â-Zn4Sb3thin film while high-purity zirconium powder and nickel tin powders were evaporated by electron beam to grow the ZrNiSn-based half-heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardments for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardments. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam can cause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ù-method measurement system to measure the cross-plane thermal conductivity ,the Van der Pauw measurement system to measure the cross-plane electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

scholarly journals The electrical conductivity of thin films of mercury

1939 ◽  
Vol 172 (951) ◽  
pp. 530-539 ◽  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electrical Conductivity ◽  
Alkali Metals ◽  
High Vacuum ◽  
Experimental Measurements ◽  
Preliminary Note ◽  
Extended Study ◽  
Temperature Coefficients ◽  
Conductivity Of Thin Films

In the present paper an account is given of experimental measurements on the electrical conductivity of thin films of mercury prepared by evaporative deposition in a high vacuum according to the technique described in previous papers (Lovell 1936; Appleyard and Lovell 1937). In a brief preliminary note (Appleyard 1937) we have pointed out that the results for mercury are very different from those for the alkali metals, and that in particular a considerable thickness of mercury must be deposited on the pyrex surface before conductivity begins. We have since confirmed and extended these observations, obtained accurate absolute values for the thickness of the films, investigated their stability, and made an extended study of their temperature coefficients after heat treatment. A comparison with the results of previous workers is given later.

Synthesis and Electrical Conductivity of N-(3-(Trifluoromethyl)Benzylidine)Thiosemicarbazide towards Dyes Sensitized Solar Cell

2018 ◽  
Vol 382 ◽  
pp. 364-368
Author(s):  
Uwaisulqarni M. Osman ◽  
Azieda Syafika N. Farizal ◽  
Nurhayati Ishak ◽  
Mohd Hasmizam Razali ◽  
M.I.N. Isa
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Light Intensity ◽  
Indium Tin Oxide ◽  
Spectroscopic Technique ◽  
Ito Glass ◽  
Maximum Conductivity ◽  
Ft Ir ◽  
Uv Visible ◽  
Conductivity Of Thin Films

Organic compound containing thiosemicarbazide moiety has been successfully synthesized. The new synthesized dyes, N-(3-(Trifluoromethylbenzaldehyde)benzylidine thiosemi- carbazide (3-TFT) was characterized by spectroscopic technique namely, CHNS elemental analysis, Fourier Transform Infra-Red analysis (FT-IR), UV-Visible analysis (UV-Vis),1H and13C Nuclear Magnetic Resonance (NMR). The thin films of this dye have been prepared using a spin coating technique and deposited on indium tin oxide (ITO) glass substrate. The main highlight was an electrical conductivity of thin films which was measured using four point probing system in a range of light intensity, 25 Wm-2until 200Wm-2. The potential electrical conductivity of 3-TFT dye was found gradually increased until reached the maximum conductivity values of 0.1489 Scm-1at light intensity of 100 Wm-2in the most diluted concentration at 1x10-5M.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

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