scholarly journals Effect of Temperature on the I-V Characteristics of a Polycrystalline Solar Cell

2016 ◽  
Vol 3 (1) ◽  
pp. 35 ◽  
Author(s):  
Indra Bahadur Karki
Keyword(s):  
Temperature Coefficient ◽  
Short Circuit ◽  
Negative Temperature ◽  
Short Circuit Current ◽  
Positive Temperature Coefficient ◽  
Open Circuit ◽  
Outdoor Environment ◽  
Effect Of Temperature ◽  
Positive Temperature ◽  
Full Spectrum

<p>The present paper reports the temperature dependencies of full-spectrum photovoltaic parameters for poly-crystalline PV module. The measurements were performed under outdoor environment conditions. The most interesting feature that was observed for these devices was that above a cell temperature of 20°C the positive temperature coefficient observed for the short-circuit current exceeds in magnitude the negative temperature coefficient that was found for the open-circuit voltage. This means that, unlike the situation for conventional PV devices, these cells actually exhibit decrease in efficiency with increasing temperature (reaching a value of 0.05 % at 60°C).</p><p>Journal of Nepal Physical Society Vol.3(1) 2015: 35-40</p>

Effect of temperature on the toxicity of S-bioallethrin andcypermethrin to susceptible and kdr-resistant strains of Blattella germanica (L.) (Dictyoptera: Blattellidae)

1987 ◽  
Vol 77 (3) ◽  
pp. 431-435 ◽  
Author(s):  
Jeffrey G. Scott
Keyword(s):  
Temperature Coefficient ◽  
Negative Temperature Coefficient ◽  
Blattella Germanica ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Effect Of Temperature ◽  
Positive Temperature ◽  
Pyrethroid Insecticides ◽  
Resistant Strains ◽  
The Difference

AbstractThe toxicity of two pyrethroid insecticides, S-bioallethrin and cypermethrin, was investigated over time at 12, 25 and 31°C in susceptible and kdr resistant strains of Blattella germanica (L.). Both strains showed a negative temperature coefficient (i.e., greater kill with decreasing temperature) for S-bioallethrin. The susceptible strain had a negative temperature coefficient for knockdown, but a positive temperature coefficient for mortality towards cypermethrin. The resistant strain had a negative temperature coefficient towards cypermethrin at all times. Resistance to S-bioallethrin was generally greatest at 25°C initially, although the difference between temperatures and the level of resistance diminished with time. Resistance to cypermethrin was significantly less at 12°C than at 25 or 31°C.

scholarly journals Effect of temperature on toxicity of selected insecticides to forest beetle Anoplotrupes Stercorosus / Interakcja temperatury z wybranymi insektycydami chrząszcza leśnego Anoplotrupes stercorosus

2013 ◽  
Vol 18 (1-2) ◽  
pp. 103-108 ◽  
Author(s):  
Bartosz Piechowicz ◽  
Przemysław Grodzicki
Keyword(s):  
Temperature Coefficient ◽  
Positive Temperature Coefficient ◽  
Effect Of Temperature ◽  
Positive Temperature ◽  
Benzoyl Urea ◽  
The Impact

Abstract In 2007 and 2008 research on the impact of temperature, ranging from 14 to 39°C on the survivability of an adult Anoplotrupes stercorosus intoxicated by insecticide preparations from the group of phosphoorganic insecticides (diazinon), carbamate (pirimicarb), quinazolines (fenazaquin), oxadiazine (indoxacarb), benzoyl urea insecticides (teflubenzuron), neonicotinoids (acetamiprid) and pyrethroids (beta-cyfluthrin) was carried out. The results obtained indicate that all preparations used in tests had a positive temperature coefficient.

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 461-466 ◽  
Author(s):  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Elevated Temperatures ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficients

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.

Influence of CF on PTC Properties of LDPE/Carbon Fiber Composites

2014 ◽  
Vol 1056 ◽  
pp. 20-24 ◽  
Author(s):  
Wen Long Zhang ◽  
Yu Ping Wan ◽  
Ya Jie Dai ◽  
Yan Gao ◽  
Chen Wang ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Temperature Coefficient ◽  
Low Cost ◽  
Negative Temperature ◽  
Treatment Method ◽  
Positive Temperature Coefficient ◽  
Carbon Fiber Composites ◽  
Positive Temperature ◽  
Short Lifespan ◽  
Cost Characteristics

PO/CB (Polyolefin/Carbon Black) PTC (Positive Temperature Coefficient) composite with easy processing, low cost characteristics has been applied widely. But it suffered from a relatively short lifespan because of its NTC (Negative Temperature Coefficient) effect and low PTC intensity. In order to overcome this shortcoming, the CF was calcination-treated to prepare LDPE/CF (Low Density Polyethylene/Carbon Fiber) PTC composite. Influence of length, content and treatment method of CF on PTC properties of composites was investigated. Results showed that 0.5mm length CF in composites had higher PTC intensity than that of 2mm length CF. PTC intensity of the composites was enhanced more effectively by calcination treated CF compared to the untreated CF. The maximum PTC intensity was 8.1 when CF’s content was at 8wt%.

scholarly journals Development of Auto Thermal Control Device For Space Air - Conditioning

2021 ◽  
pp. 193-204
Author(s):  
Akinde Olusola Kunle ◽  
Maduako Kingsley Obinna ◽  
Akande, Kunle Akinyinka ◽  
Adeaga Oyetunde Adeoye
Keyword(s):  
Temperature Coefficient ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Thermal Control ◽  
Positive Temperature Coefficient ◽  
Control Device ◽  
Thermal Source ◽  
Positive Temperature ◽  
Ntc Thermistor

Auto Thermal Control device is an electronic based device which employs the application of temperature sensors to controlling household appliances without human interference directly. In this work, thermal source is used to regulate electrical fan and room heater depending on ambient temperature. The room heater, which is adjusted to a set temperature, switches ‘ON’ when the temperature of a room is low (cold). While the same is switches ‘OFF’ with increase in the room temperature. This triggers ‘ON’ an electric fan at different speeds, and thus cools the room. A temperature sensor, tthermistor, monitors change in room temperature. Two types of thermistor exists: Positive Temperature Coefficient, PTC. An increasee in the resistance of PTC results in increasee in temperature). In the Negative Temperature Coefficient, NTC; a decreasee in resistance yields to temperature increase. This article explored a NTC thermistor. The design could be a ready product in the market of the developing nation where environmental automation is yet fully deployed.

scholarly journals Model Dye-Sensitized Solar Cell dan Aplikasinya Berdasarkan Data Temperatur Harian: Studi Kasus Pangkalpinang

2021 ◽  
Vol 6 (2) ◽  
Author(s):  
Aliefia Noor ◽  
Meri Hamdini ◽  
Salsabila Ramadina ◽  
Yuant Tiandho
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Effect Of Temperature ◽  
Synthesis Process ◽  
Dye Sensitized ◽  
Proposed Model ◽  
Sensitized Solar Cells

<p>Dye-Sensitized Solar Cells (DSSC) is photovoltaic with a dye that functions as an acceptor of sunlight. The great potential of using DSSC lies in the ease of the synthesis process, and the dyes used can come from plants. However, like most other solar cells, increasing the operating temperature can degrade the DSSC performance and thus decrease the efficiency. This article presents a model of the relationship between the effect of temperature on DSSC performance. The model proposed is derived from the DSSC equivalence with a diode circuit. By confirming the experimental research results, it is known that the model presented in this study has excellent accuracy on various DSSC performance parameters (R2&gt; 0.99). The performance studied includes the I-V curve's shape, the value of the short-circuit current, the diode leakage current, and the open-circuit voltage. Based on daily temperature data in Pangkalpinang City, the potential performance of the DSSC could also be determined when it was developed in Kep. Bangka Belitung. The short-circuit current value obtained is in the range of 14 A with a voltage of 0.6 V. It is hoped that this proposed model can be information for the development of DSSC because of its enormous potential application in Indonesia.</p>

scholarly journals Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1241 ◽  
Author(s):  
Bilel Chouchen ◽  
Mohamed Hichem Gazzah ◽  
Abdullah Bajahzar ◽  
Hafedh Belmabrouk
Keyword(s):  
Solar Cells ◽  
Quantum Wells ◽  
Negative Impact ◽  
Positive Impact ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Effect Of Temperature ◽  
Photovoltaic Parameters

In this paper, a numerical model allows to analyze the photovoltaic parameters according to the electronic properties of InxGa1−xN/GaN MQW solar cells under the effect of temperature, the number of quantum wells and indium composition. The numerical investigation starts from the evaluation through the finite difference (FDM) simulation of the self-consistent method coupled with the photovoltaic parameters taking into account the effects of the spontaneous and piezoelectric polarization. The results found were consistent with the literature. As expected, the temperature had a negative impact on the performance of InGaN/GaN MQW solar cells. However, increasing the number of quantum wells improves cell performance. This positive impact further improves with the increase in the indium rate. The obtained results were 28 mA/cm2 for the short-circuit current density, 1.43 V for the open-circuit voltage, and the obtained conversion efficiency was 31% for a model structure based on 50-period InGaN/GaN-MQW-SC under 1-sun AM1.5G.

scholarly journals Temperature Self-Compensated Strain Sensors based on MWCNT-Graphene Hybrid Nanocomposite

2019 ◽  
Vol 3 (4) ◽  
pp. 96 ◽  
Author(s):  
Rajarajan Ramalingame ◽  
Jose Roberto Bautista-Quijano ◽  
Danrlei de Farias Alves ◽  
Olfa Kanoun
Keyword(s):  
Temperature Coefficient ◽  
Carbon Nanomaterials ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Gauge Factor ◽  
Positive Temperature ◽  
Hybrid Nanocomposite ◽  
Resistance Change ◽  
Influence Of Temperature ◽  
Dispersion Quality

Sensors based on carbon nanomaterials are gaining importance due to their tunable properties and their potentially outstanding sensing performance. Despite their advantages, carbon-based nanomaterial sensors are prone to cross-sensitivities with environmental factors like temperature. Thus, to reduce the temperature influence on the sensing material, compensation and correction procedures are usually considered. These methods may require the use of additional sensors which can themselves be subject to residual errors. Hence, a more promising approach consists of synthesizing a material that is capable of self-compensating for the influence of temperature. In this study, a hybrid nanocomposite based on multi-walled carbon nanotubes (MWCNT) and graphene is proposed, which can compensate, by itself, for the influence of temperature on the material conductivity. The hybrid nanocomposite material uses the different temperature behavior of MWCNTs, which have a negative temperature coefficient, and graphene, which has a positive temperature coefficient. The influence of the material ratio and dispersion quality are investigated in this work. Material composition and dispersion quality are analyzed using Raman spectroscopy and scanning electron microscopy (SEM). A composition of 70% graphene and 30% MWCNT exhibits a nearly temperature-independent hybrid nanocomposite with a sensitivity of 0.022 Ω/°C, corresponding to a resistance change of ~1.2 Ω for a temperature range of 25 to 80 °C. Additionally, a simple investigation of the strain sensing behavior of the hybrid material is also presented. The hybrid nanocomposite-based, thin-film strain sensor exhibits good stability over 100 cycles and a significantly high gauge factor, i.e., 16.21.

Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET

2017 ◽  
Vol 897 ◽  
pp. 665-668
Author(s):  
Matthaeus Albrecht ◽  
Andreas Huerner ◽  
Tobias Erlbacher ◽  
Anton J. Bauer ◽  
Lothar Frey
Keyword(s):  
Solid State ◽  
Temperature Coefficient ◽  
High Voltage ◽  
Circuit Breaker ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Solid State Circuit ◽  
Current Voltage ◽  
Solid State Circuit Breaker

In this work, the feasibility of the Bipolar-Injection Field Effect-Transistor (BIFET) [5] in two different Dual Thyristor type circuits [4] for an application as solid-state circuit breaker (SSCB) is experimentally verified. The Dual Thyristor type circuits are assembled from discrete silicon JFETs and a silicon carbide BIFET and are electrically characterized at various temperatures. The current-voltage characteristic shows the expected regenerative self-triggered turn-off capability under over-currents and the option to control the turn-off current by a passive resistor network. The issue with the adverse positive temperature coefficient of the trigger-current can be solved by putting the SiC BIFET in a cascode arrangement with a silicon Dual Thyristor. In this configuration the SiC BIFET provides the high voltage blocking capability and the silicon Dual Thyristor with its negative temperature coefficient controls the trigger-current. Transient analyses of both circuits indicate fast switching times of less than 50 μs seconds. It is demonstrated for the first time, that the SiC BIFET, due to its normally-on behaviour, used in a Dual Thyristor type circuit is a promising concept for self-triggered fuses in high current and high voltage applications.

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