High Current Focused Ion Beam Instrument for Destructive Physical Analysis Applications

Author(s):  
Paul Tesch ◽  
Noel Smith ◽  
Noel Martin ◽  
Doug Kinion

Abstract Conventional focused ion beams (FIB) employing liquid metal ion sources (LMIS) are used to create site specific cross-sections for viewing subsurface features and performing 3D metrology on subsurface structure. Emerging applications incorporate novel materials as well as large structures that interface to decreasing IC dimensions and often require destructive physical analysis. This paper describes a novel instrument in which an inductively coupled plasma ion source is integrated onto a conventional FIB column. It compares this instrument to the existing LMIS FIBs and shows examples that illustrate the capabilities of this tool. This instrument retains the benefits of the conventional LMIS FIB such as high placement accuracy and the ability to immediately obtain high resolution images of the cross-section face without having to transfer it to another tool. It is capable of creating large cross-sections from 10 microns to 1mm in size at about 100 times faster than a conventional FIB.

2006 ◽  
Vol 77 (3) ◽  
pp. 03B515 ◽  
Author(s):  
V. Kanarov ◽  
A. Hayes ◽  
R. Yevtukhov ◽  
I. Kameyama ◽  
D. Siegfried ◽  
...  

Author(s):  
T. Hrnčíř ◽  
F. Lopour ◽  
M. Zadražil ◽  
A. Delobbe ◽  
O. Salord ◽  
...  

Abstract The standard Ga focused ion beam (FIB) technology is facing challenges because of a request for large volume removal. This is true in the field of failure analysis. This article presents the first combined tool which can fulfill this requirement. This tool offers the combination of a high resolution scanning electron microscope (SEM) and a high current FIB with Xe plasma ion source. The article focuses on failure analysis examples and discusses the different steps of extra large cross sections (deposition of protective layer, rough milling, and polishing). Several applications of the novel Xe plasma FIB/SEM instrument are shown with respect to the failure analysis. The performance of the instrument is tested and discussed in comparison to gallium liquid metal ion source FIB systems. Results show that the Xe plasma FIB offers much higher milling rate, greatly reducing the time necessary for many failure analysis tasks.


Author(s):  
Zixiao Pan ◽  
Wei Wei ◽  
Fuhe Li

Abstract This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.


Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.


1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.


2004 ◽  
Vol 75 (5) ◽  
pp. 1681-1683 ◽  
Author(s):  
Yoon Jae Kim ◽  
I. S. Hong ◽  
H. S. Kim ◽  
Y. S. Hwang

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