Novel Plasma FIB/SEM for High Speed Failure Analysis and Real Time Imaging of Large Volume Removal

2012 ◽  
Author(s):  
T. Hrnčíř ◽  
F. Lopour ◽  
M. Zadražil ◽  
A. Delobbe ◽  
O. Salord ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Cross Sections ◽  
Large Volume ◽  
Metal Ion ◽  
High Speed ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Protective Layer ◽  
Ion Source ◽  
Rough Milling

Abstract The standard Ga focused ion beam (FIB) technology is facing challenges because of a request for large volume removal. This is true in the field of failure analysis. This article presents the first combined tool which can fulfill this requirement. This tool offers the combination of a high resolution scanning electron microscope (SEM) and a high current FIB with Xe plasma ion source. The article focuses on failure analysis examples and discusses the different steps of extra large cross sections (deposition of protective layer, rough milling, and polishing). Several applications of the novel Xe plasma FIB/SEM instrument are shown with respect to the failure analysis. The performance of the instrument is tested and discussed in comparison to gallium liquid metal ion source FIB systems. Results show that the Xe plasma FIB offers much higher milling rate, greatly reducing the time necessary for many failure analysis tasks.

High Current Focused Ion Beam Instrument for Destructive Physical Analysis Applications

2008 ◽  
Author(s):  
Paul Tesch ◽  
Noel Smith ◽  
Noel Martin ◽  
Doug Kinion
Keyword(s):  
Cross Sections ◽  
Inductively Coupled Plasma ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Physical Analysis ◽  
Inductively Coupled ◽  
3D Metrology ◽  
Plasma Ion Source

Abstract Conventional focused ion beams (FIB) employing liquid metal ion sources (LMIS) are used to create site specific cross-sections for viewing subsurface features and performing 3D metrology on subsurface structure. Emerging applications incorporate novel materials as well as large structures that interface to decreasing IC dimensions and often require destructive physical analysis. This paper describes a novel instrument in which an inductively coupled plasma ion source is integrated onto a conventional FIB column. It compares this instrument to the existing LMIS FIBs and shows examples that illustrate the capabilities of this tool. This instrument retains the benefits of the conventional LMIS FIB such as high placement accuracy and the ability to immediately obtain high resolution images of the cross-section face without having to transfer it to another tool. It is capable of creating large cross-sections from 10 microns to 1mm in size at about 100 times faster than a conventional FIB.

A Compact Nuclear Microprobe With a Liquid Metal Ion Source and a Toroidal Analyzer

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Spot Size ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
Atomic Resolution ◽  
Nuclear Microprobe

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.

Direct Imaging of Device Characteristics In a Focused ion Beam System

1998 ◽  
Vol 4 (S2) ◽  
pp. 652-653 ◽  
Author(s):  
A. N. Campbell ◽  
J. M. Soden
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Cross Sections ◽  
Material Removal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Yield Enhancement ◽  
The Past ◽  
Design Changes ◽  
Design Debugging

A great deal can be learned about integrated circuits (ICs) and microelectronic structures simply by imaging them in a focused ion beam (FIB) system. FIB systems have evolved during the past decade from something of a curiosity to absolutely essential tools for microelectronics design verification and failure analysis. FIB system capabilities include localized material removal, localized deposition of conductors and insulators, and imaging. A major commercial driver for FIB systems is their usefulness in the design debugging cycle by (1) rewiring ICs quickly to test design changes and (2) making connection to deep conductors to facilitate electrical probing of complex ICs. FIB milling is also used for making precision cross sections and for TEM sample preparation of microelectronic structures for failure analysis and yield enhancement applications.

Advanced sub 0.13µm Cu Devices – Failure Analysis and Circuit Edit With Improved FIB Chemical Processes and Beam Characteristics

2002 ◽  
Author(s):  
J. David Casey ◽  
Thomas J. Gannon ◽  
Alex Krechmer ◽  
David Monforte ◽  
Nicholas Antoniou ◽  
...  
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Processes ◽  
Design Verification ◽  
End Point Detection ◽  
On Chip ◽  
Point Detection ◽  
Low K

Abstract Advances in FIB (focused ion beam) chemical processes and in the Ga (gallium) beam profile are discussed; these advances are necessary for the successful failure analysis, circuit edit and design verification of advanced, sub-0.13µm Cu devices. Included in this article are: a novel FIB method (CopperRx) for smoothly milling thick, large grained Cu lines; H2O and O2 processes for cleanly cutting thin, smaller grained Cu lines, thereby forming electrically open interconnects; a XeF2 GAE (gas assisted etching) process for etching low k, CVD dielectrics such as F and C doped SiO2; H2O and XeF2 GAE processes for etching low k, spin-on, organic dielectrics such as SiLK; a recently developed recipe for the deposition of SiO2 based material with intermediate resistivity (106 µohm·cm) which is useful in the design verification of frequency sensitive, high speed analog and SOC (system on chip) circuits; an improved, more Gaussian Ga beam with less current density in the beam tails (VisION column) which provides higher resolution, real time images needed for end-point detection on sub 0.13µm features during milling.

Beam interactions in a focused ion beam system with a liquid metal ion source

1994 ◽  
Vol 23 (1-4) ◽  
pp. 107-110 ◽  
Author(s):  
P.W.H. de Jager ◽  
L.J. Vijgen
Keyword(s):  
Liquid Metal ◽  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Beam System

Dy–Ni alloy metal ion source for focused ion beam implantation

Vacuum ◽  
2002 ◽  
Vol 67 (2) ◽  
pp. 249-251 ◽  
Author(s):  
A Melnikov ◽  
M Hillmann ◽  
I Kamphausen ◽  
W Oswald ◽  
P Stauche ◽  
...  
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Ni Alloy ◽  
Ion Beam Implantation ◽  
Alloy Metal
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