Failure Analysis of Stacked-Die Devices by Combining Non-Destructive Localization and Target Preparation Methods

2009 ◽  
Author(s):  
Christian Schmidt ◽  
Michél Simon ◽  
Frank Altmann ◽  
Antoine Nowodzinski
Keyword(s):  
Cross Section ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Preparation Methods ◽  
Target Preparation ◽  
X Ray ◽  
Root Cause ◽  
Lock In ◽  
Non Destructive ◽  
Section Analysis

Abstract The paper will present an approach for non-destructive localization of thermal active defects at multi chip devices combining the Lock-in Thermography and following local X-Ray inspection. In combination of both methods inner defects in inter chip connections of complex device built ups can be found in a non-destructive way before opening the device. The methods were demonstrated at defective flip chip devices with a high ohmic daisy chain with lots of chip to chip contacts. Subsequently, cross section analysis at located high ohmic contacts was performed in order to find the root cause of the failure.

Failure Analysis of a Qualification Unit Injector for a Satellite Thruster

1998 ◽  
Author(s):  
M. Lipschutz ◽  
R. Brannam ◽  
T. Nguyentat
Keyword(s):  
Failure Analysis ◽  
Cross Section ◽  
Combustion Products ◽  
Design Parameters ◽  
Cross Sectional ◽  
X Ray ◽  
Root Cause ◽  
Qualification Testing ◽  
Non Destructive ◽  
Unit Injector

Abstract This article details the results of a failure analysis performed on a Qualification Unit injector for a military satellite thrusters and explains that the failure was initially detected due to a shift in performance during qualification testing. Failure analysis involved non-destructive evaluation on the injector using micro-focus X-ray and scanning electron microscopy. Serial cross-sectional metallography was then performed, with each cross-section documented by optical microscopy and SEM. The failure analysis resulted in three main conclusions: (1) the root cause of the failure was attributed to multiple detonations in or around the damaged orifice; these detonations were likely caused by fuel and/or combustion products condensing in the orifice between pulses and then igniting during a subsequent pulse; (2) multiple damage mechanisms were identified in addition to the ZOT detonations; and (3) the material and platelet manufacturing process met all design parameters.

Through Package Defect Localization by Lock-In Thermography

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 002160-002198
Author(s):  
Rudolf Schlangen ◽  
Herve Deslandes ◽  
Toru Toda ◽  
Toshinobu Nagatomo ◽  
Shigeki Sako ◽  
...  
Keyword(s):  
High Resolution ◽  
Thermal Emission ◽  
Emission Analysis ◽  
X Ray ◽  
Root Cause ◽  
Defect Localization ◽  
Thermal Defect ◽  
Focus Analysis ◽  
Lock In ◽  
Non Destructive

Root cause analysis for package defects is currently performed by de-processing the package until such defects can be physically seen. However, many such defects within the package are removed, or are confused with defects created during de-processing itself. 3D X-ray has been used to analyze such physical defects within a packaged device in a non-destructive manner. However, the increasing density and associated shrinkage of components such as multi-layered substrates require significantly higher resolutions, which translates to longer times. High resolution X-ray is impractical when searching for a defect over a wide area due to the time to acquire detailed 3D images (~24 hrs). Thermal emission analysis has been widely used for localizing defects on ICs. Recent advancement in thermal emission camera technology coupled with lock-in thermography has allowed orders of magnitude better sensitivity ( < 1μW) and improvement in localization resolution (x,y to < 3 um). However, the application of lock-in thermography has been primarily limited to defect localization at the die level [1]. A a highly sensitive MWIR camera combined with a real time lock-in technique demonstrates the capability to localize defects within packaged devices, even through its mold compound. The technique accurately predicts the depth (z) of a thermal defect within the device (< + 5%) This paper will demonstrate multiple examples of the successful combination of advanced lock-in thermography analysis and high resolution 3D X-ray for totally non-destructive defect location within a packaged device. This initial accurate thermal localization in x, y and z enables the high resolution 3D X-ray system to focus analysis to a few microns so that the defect can be seen quickly (< 1 hr), enabling detection and analysis of previously undetected defects with highest throughput.

Case Analysis on PTH Fracture Caused by Twin Copper

2014 ◽  
Vol 1061-1062 ◽  
pp. 431-435
Author(s):  
Xiao He
Keyword(s):  
Thermal Analysis ◽  
Thermal Stress ◽  
Theoretical Analysis ◽  
Cross Section ◽  
Current Density ◽  
Case Analysis ◽  
Actual Case ◽  
Soldering Process ◽  
Root Cause ◽  
Section Analysis

An actual case of PTH fracture after soldering process was studied. By means of cross section analysis using metallography microscope and SEM, together with thermal analysis results, root cause of PTH fracture was concluded that a high density of twin copper weakened the mechanical strength so seriously that PTHs could not undergo thermal stress from soldering process, and higher CTE was attributed to an accelerative factor. Moreover, it is recommended to enhance current density properly and make sure the effectiveness of electroplating additives to prevent twin copper by theoretical analysis.

Applications of 3D X-Ray Microscopy for Advanced Package Development

2011 ◽  
Vol 2011 (1) ◽  
pp. 001078-001083 ◽  
Author(s):  
K. Fahey ◽  
R. Estrada ◽  
L. Mirkarimi ◽  
R. Katkar ◽  
D. Buckminster ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Development Stage ◽  
Development Effort ◽  
X Ray ◽  
Structural Details ◽  
Volumetric Images ◽  
Advanced Packaging ◽  
Solder Fatigue ◽  
Non Destructive

This paper describes the utilization of non-destructive imaging using 3D x-ray microscopy for package development and failure analysis. Four case studies are discussed to explain our methodology and its impact on our advanced packaging development effort. Identifying and locating failures embedded deep inside the package, such as a solder fatigue failure within a flip chip package, without the need for physical cross-sectioning is of substantial benefit because it preserves the package for further analysis. Also of utility is the ability to reveal the structural details of the package while producing superior quality 2D and volumetric images. The technique could be used not only for analysis of defects and failures, but also to characterize geometries and morphologies during the process and package development stage.

scholarly journals Effect of Long-Term High Temperature Oxidation on the Coking Behavior of Ni-Cr Superalloys

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1899 ◽  
Author(s):  
Stamatis Sarris ◽  
Manjunath Patil ◽  
Kim Verbeken ◽  
Marie-Françoise Reyniers ◽  
Kevin Van Geem
Keyword(s):  
Cross Section ◽  
Temperature Oxidation ◽  
X Ray ◽  
Microstructure Stability ◽  
Ni Content ◽  
Steam Cracking ◽  
Improved Stability ◽  
Section Analysis

The service time of an industrial cracker is strongly dependent on the long-term coking behavior and microstructure stability of the reactor coil alloy. Super alloys are known to withstand temperatures up to even 1400 K. In this work, several commercially available alloys have been first exposed to a long term oxidation at 1423 K for 500 h, so-called metallurgic aging. Subsequently, their coking behavior was evaluated in situ in a thermogravimetric setup under ethane steam cracking conditions (Tgasphase = 1173 K, Ptot = 0.1 MPa, XC2H6 = 70%, continuous addition of 41 ppmw S/HC of DMDS, dilution δ = 0.33 kgH2O/kgHC) and compared with their unaged coking behavior. The tested samples were also examined using scanning electron microscopy and energy diffractive X-ray for surface and cross-section analysis. The alloys characterized by increased Cr-Ni content or the addition of Al showed improved stability against bulk oxidation and anti-coking behavior after application of metallurgic aging due to the formation of more stable oxides on the top surface.

3D Localization of Liner Breakdown’s within Cu Filled TSVs by Backside LIT and PEM Defocusing Series

2017 ◽  
Author(s):  
Frank Altmann ◽  
Christian Grosse ◽  
Ingrid de Wolf ◽  
Sebastian Brand
Keyword(s):  
System Integration ◽  
Enabling Technology ◽  
Microscopy Imaging ◽  
Analysis Techniques ◽  
Root Cause ◽  
3D Localization ◽  
Silicon Vias ◽  
Lock In ◽  
Non Destructive ◽  
High Processing

Abstract Tremendous research efforts have been devoted particularly to the development and improvement of through silicon vias (TSV) in order to provide a key enabling technology for vertical system integration. To achieve high processing yield and reliability efficient failure analysis techniques for process control and root cause analysis are required. The current paper presents an advanced approach for non-destructive localization of TSV sidewall defects applying high resolution Lock-in Thermography and Photoemission Microscopy imaging and defocusing series.

scholarly journals Metal Content and Structure of Textiles in Textile Metal Threads in Croatia from 17th to 20th Century

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 251
Author(s):  
Kristina Šimić ◽  
Ivo Soljačić ◽  
Domagoj Mudronja ◽  
Tihana Petrović Leš
Keyword(s):  
Cross Section ◽  
Metal Content ◽  
Textile Yarn ◽  
X Ray ◽  
Gold Silver ◽  
Temporal And Spatial ◽  
Technology Of Production ◽  
Textile Thread ◽  
Adequate Method ◽  
Section Analysis

Textile metal threads were used to decorate historical Croatian textiles. There are three basic types of metal threads usually used on historical textiles in Croatia. These are narrow stripes, wires, and combined metal textile yarn called “srma”, made of metal thread spirally wrapped around the nonmetal textile yarn. Textile yarns were made of silk, linen, wool, or cotton. Metal threads were primarily made of gold, silver, and copper, and different alloys of these metals or threads are layered in the structure. Analysis of metal threads with three different methods was made and the most adequate method for the analysis of metal threads from historical textiles was established. Metal thread analysis was performed with scanning electron microscopy with an energy-dispersive X-ray detector (SEM-EDX), which was determined to be the most suitable for the analysis of historical textiles if cross-section analysis of metal threads is also performed. Textile threads from combined metal textile threads were analysed with a light microscope. This information of the metal threads’ content and structure as well as the composition of textile thread can lead to an understanding of the technology of production threads and also temporal and spatial dating of textile objects which is helpful to conservators and restorers of valuable historical textiles.

Root-Cause Investigations of Stitch Bond – Shearing by Means of 3D-X-ray Computer Tomography (XCT), Metallographic Polishing and FIB

2010 ◽  
Author(s):  
Peter Jacob ◽  
Iwan Jerjen ◽  
Giovanni Nicoletti
Keyword(s):  
Failure Modes ◽  
Typical Case ◽  
Bending Properties ◽  
Thermomechanical Stress ◽  
X Ray ◽  
Root Cause ◽  
Electrical Connections ◽  
Non Destructive ◽  
Non Destructive Characterization

Abstract Since new packaging technologies came up, sensitive failure modes, which were difficult to prove, increased. In many cases, an interaction of bending properties, thermomechanical stress and the material compounds used, cause intermittent failures related to electrical connections. Since any decapsulation might falsify analysis results, non-destructive characterization approaches are of utmost importance for future failure analysis. By means of a typical case study, the capabilities and limitations of a highly developed X-ray tool in such application has been outlined as well as the complexity of root cause findings.

Nondestructive Analysis Solution Using Combination of Lock-In Thermography (LIT) and 3D Oblique X-Ray CT Technology

2013 ◽  
Author(s):  
Naoki Seimiya ◽  
Takuhei Watanabe ◽  
Takashi Ichinomiya
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Analysis Method ◽  
Nondestructive Analysis ◽  
X Ray ◽  
Ct Technology ◽  
Total Analysis ◽  
Lock In ◽  
Type Of Failure ◽  
Non Destructive

Abstract We developed the non-destructive failure analysis method that is combination of Lock-in thermography (LIT) and high resolution 3D oblique CT. It made possible to complete the total analysis efficiently, because we can distinguish the type of failure by this non-destructive method.

Failure Analysis Process Flows and Common Failure Mechanisms in Flip-Chip Packaged Device

2000 ◽  
Author(s):  
Steve Hsiung ◽  
Victer Chan
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Failure Mechanisms ◽  
Fault Identification ◽  
Process Flow ◽  
Packaging Technology ◽  
Root Cause ◽  
Analysis Process ◽  
Complex Construction ◽  
Non Destructive

Abstract With the increasing complexity of packaging technology, especially Flip-chip, package failure analysts face challenges to identify failure root cause. Due to the complex construction of Flip-chip packages, the conventional failure analysis process flow needs to be enhanced. Thus, generating a bench marked failure analysis process flow specifically for Flip-chip packaged devices becomes necessary. In this paper, the failure analysis process flow for Flip-chip package devices along with different failure mechanisms will be discussed and demonstrated. For instance, even in a simple continuity-open failure, instead of cross-sectioning the device as the initial fault identification step, the process flow details how to start from non-destructive C-SAM, TDR, to destructive die removal, polishing and finally cross-sectioning.

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