3D Localization of Liner Breakdown’s within Cu Filled TSVs by Backside LIT and PEM Defocusing Series

2017 ◽  
Author(s):  
Frank Altmann ◽  
Christian Grosse ◽  
Ingrid de Wolf ◽  
Sebastian Brand
Keyword(s):  
System Integration ◽  
Enabling Technology ◽  
Microscopy Imaging ◽  
Analysis Techniques ◽  
Root Cause ◽  
3D Localization ◽  
Silicon Vias ◽  
Lock In ◽  
Non Destructive ◽  
High Processing

Abstract Tremendous research efforts have been devoted particularly to the development and improvement of through silicon vias (TSV) in order to provide a key enabling technology for vertical system integration. To achieve high processing yield and reliability efficient failure analysis techniques for process control and root cause analysis are required. The current paper presents an advanced approach for non-destructive localization of TSV sidewall defects applying high resolution Lock-in Thermography and Photoemission Microscopy imaging and defocusing series.

Use of Lock-In Thermography for Non-Destructive 3D Defect Localization on System in Package and Stacked-Die Technology

2011 ◽  
Author(s):  
Rudolf Schlangen ◽  
Shinobu Motegi ◽  
Toshi Nagatomo ◽  
Christian Schmidt ◽  
Frank Altmann ◽  
...  
Keyword(s):  
Case Studies ◽  
Simulation Software ◽  
Heat Sources ◽  
Internal Reference ◽  
Short Introduction ◽  
3D Localization ◽  
Defect Localization ◽  
New Challenges ◽  
Lock In ◽  
Non Destructive

Abstract With the growing variety, complexity and market share of 3D packaged devices, package level FA is also facing new challenges and higher demand. This paper presents Lock-In Thermography (LIT) for fully non-destructive 3D defect localization of electrical active defects. After a short introduction of the basic LIT theory, two slightly different approaches of LIT based 3D localization will be discussed based on two case studies. The first approach relies on package internal reference heat sources (e.g. I/O-diodes) on different die levels. The second approach makes use of calibrated 3D simulation software to yield the differentiation between die levels in 8 die µSD technology.

Through Package Defect Localization by Lock-In Thermography

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 002160-002198
Author(s):  
Rudolf Schlangen ◽  
Herve Deslandes ◽  
Toru Toda ◽  
Toshinobu Nagatomo ◽  
Shigeki Sako ◽  
...  
Keyword(s):  
High Resolution ◽  
Thermal Emission ◽  
Emission Analysis ◽  
X Ray ◽  
Root Cause ◽  
Defect Localization ◽  
Thermal Defect ◽  
Focus Analysis ◽  
Lock In ◽  
Non Destructive

Root cause analysis for package defects is currently performed by de-processing the package until such defects can be physically seen. However, many such defects within the package are removed, or are confused with defects created during de-processing itself. 3D X-ray has been used to analyze such physical defects within a packaged device in a non-destructive manner. However, the increasing density and associated shrinkage of components such as multi-layered substrates require significantly higher resolutions, which translates to longer times. High resolution X-ray is impractical when searching for a defect over a wide area due to the time to acquire detailed 3D images (~24 hrs). Thermal emission analysis has been widely used for localizing defects on ICs. Recent advancement in thermal emission camera technology coupled with lock-in thermography has allowed orders of magnitude better sensitivity ( < 1μW) and improvement in localization resolution (x,y to < 3 um). However, the application of lock-in thermography has been primarily limited to defect localization at the die level [1]. A a highly sensitive MWIR camera combined with a real time lock-in technique demonstrates the capability to localize defects within packaged devices, even through its mold compound. The technique accurately predicts the depth (z) of a thermal defect within the device (< + 5%) This paper will demonstrate multiple examples of the successful combination of advanced lock-in thermography analysis and high resolution 3D X-ray for totally non-destructive defect location within a packaged device. This initial accurate thermal localization in x, y and z enables the high resolution 3D X-ray system to focus analysis to a few microns so that the defect can be seen quickly (< 1 hr), enabling detection and analysis of previously undetected defects with highest throughput.

Efficient Nondestructive 3D Defect Localization by Lock-in Thermography Utilizing Multi-Harmonics Analysis

2014 ◽  
Author(s):  
Falk Naumann ◽  
Frank Altmann ◽  
Christian Grosse ◽  
Rolf Herold
Keyword(s):  
Hall Sensor ◽  
Phase Shift Analysis ◽  
Specific Test ◽  
3D Localization ◽  
Sensor Device ◽  
Shift Analysis ◽  
Defect Localization ◽  
Lock In ◽  
Non Destructive ◽  
Resistive Defects

Abstract Lock-in Thermography in combination with spectral phase shift analysis provides a capability for non-destructive 3D localization of resistive defects in packaged and multi stacked die devices. In this paper a novel post processing approach will be presented allowing a significant reduction of measurement time by factor >5 in comparison to the standard measurement routine. The feasibility of the approach is demonstrated on a specific test specimen made from ideal homogenous and opaque material and furthermore on a packaged hall sensor device. Within the case studies the results of multiple single LIT measurements were compared with the new multi harmonics data analysis approach.

Failure Analysis of Stacked-Die Devices by Combining Non-Destructive Localization and Target Preparation Methods

2009 ◽  
Author(s):  
Christian Schmidt ◽  
Michél Simon ◽  
Frank Altmann ◽  
Antoine Nowodzinski
Keyword(s):  
Cross Section ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Preparation Methods ◽  
Target Preparation ◽  
X Ray ◽  
Root Cause ◽  
Lock In ◽  
Non Destructive ◽  
Section Analysis

Abstract The paper will present an approach for non-destructive localization of thermal active defects at multi chip devices combining the Lock-in Thermography and following local X-Ray inspection. In combination of both methods inner defects in inter chip connections of complex device built ups can be found in a non-destructive way before opening the device. The methods were demonstrated at defective flip chip devices with a high ohmic daisy chain with lots of chip to chip contacts. Subsequently, cross section analysis at located high ohmic contacts was performed in order to find the root cause of the failure.

3D IC/Stacked Device Fault Isolation Using 3D Magnetic Field Imaging

2014 ◽  
Author(s):  
A. Orozco ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
A. Moghe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Fault Isolation ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Current Location ◽  
Geometrical Information ◽  
Magnetic Field Imaging ◽  
Silicon Vias ◽  
Non Destructive ◽  
Field Imaging

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.

Acoustic and Photoacoustic Inspection of Through-Silicon Vias in the GHz-Frequency Band

2017 ◽  
Author(s):  
Sebastian Brand ◽  
Michael Kögel ◽  
Frank Altmann ◽  
Ingrid DeWolf ◽  
Ahmad Khaled ◽  
...  
Keyword(s):  
Quality Assessment ◽  
Frequency Band ◽  
Process Development ◽  
Three Dimensional ◽  
Non Destructive Testing ◽  
Destructive Testing ◽  
Vertical Interconnection ◽  
Testing Techniques ◽  
Silicon Vias ◽  
Non Destructive

Abstract Through Silicon Via (TSV) is the most promising technology for vertical interconnection in novel three-dimensional chip architectures. Reliability and quality assessment necessary for process development and manufacturing require appropriate non-destructive testing techniques to detect cracks and delamination defects with sufficient penetration and imaging capabilities. The current paper presents the application of two acoustically based methods operating in the GHz-frequency band for the assessment of the integrity of TSV structures.

Failure Analysis Strategies for Multistacked Memory Devices with TSV Interconnects

2015 ◽  
Author(s):  
Frank Altmann ◽  
Christian Grosse ◽  
Falk Naumann ◽  
Jens Beyersdorfer ◽  
Tony Veches
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Memory Devices ◽  
Metallographic Cross Section ◽  
Electron Beam Induced Current ◽  
Thermal Simulations ◽  
Lock In ◽  
Non Destructive

Abstract In this paper we will demonstrate new approaches for failure analysis of memory devices with multiple stacked dies and TSV interconnects. Therefore, TSV specific failure modes are studied on daisy chain test samples. Two analysis flows for defect localization implementing Electron Beam Induced Current (EBAC) imaging and Lock-in-Thermography (LIT) as well as adapted Focused Ion Beam (FIB) preparation and defect characterization by electron microscopy will be discussed. The most challenging failure mode is an electrical short at the TSV sidewall isolation with sub-micrometer dimensions. It is shown that the leakage path to a certain TSV within the stack can firstly be located by applying LIT to a metallographic cross section and secondly pinpointing by FIB/SEM cross-sectioning. In order to evaluate the potential of non-destructive determination of the lateral defect position, as well as the defect depth from only one LIT measurement, 2D thermal simulations of TSV stacks with artificial leakages are performed calculating the phase shift values per die level.

scholarly journals Konflik Penolakan Ritual Doa Leluhur Paguyuban Padma Buana di Pedukuhan Mangir Bantul, Yogyakarta

SMART ◽  
2020 ◽  
Vol 6 (1) ◽  
pp. 49-62
Author(s):  
Setyo Boedi Oetomo
Keyword(s):  
Factor Analysis ◽  
Cultural Tourism ◽  
Analysis Techniques ◽  
Root Cause ◽  
Multiple Factors ◽  
Tourism Management ◽  
The People ◽  
Local Residents ◽  
The Village

The people of Yogyakarta are known for their tolerance, where people of different religions can coexist peacefully especially with Javanese traditions. But in Mangir, a village in Bantul, Yogyakarta, in November 12, 2019, there was a case of local residents rejecting the procession of ancestral prayer rituals by the Paguyuban Padma Buana (PPB) who claims to be followers of Javanese Hinduism. This study aimed at disclosing the elements and roots of conflict from the Mangir community's rejection towards Paguyuban Padma Buana. As a case study, it used conflict analysis approach through timeline and factor analysis techniques. The results showed that the open conflict between the two groups has occurred since 2012 with the main issue of syncretic ritual practices of Hinduism, Buddhism, and Kejawen (Javanism) that involve people from various religions. In addition, the Maha Lingga Padma Buana Temple as a place of whorship and rituals has also the license problems. Reconciliation was carried out between residents with the Padma Buana followers in 2015. Unfortunately it was violated by the Paguyuban Padma Buana and became a trigger of conflict back in 2019. The cause of this conflict is multiple factors, all of which are interrelated. However, the root cause of the problem among Mangir people is mostly related to traditional revivalism and the distribution of cultural tourism management authorities. This conflict makes them polarized and vulnerable to interests that can create the village atmosphere worse

scholarly journals Porosity and Inclusion Detection in CFRP by Infrared Thermography

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
C. Toscano ◽  
C. Meola ◽  
M. C. Iorio ◽  
G. M. Carlomagno
Keyword(s):  
Infrared Thermography ◽  
Production Costs ◽  
Non Destructive Testing ◽  
Destructive Testing ◽  
Evaluation Methodologies ◽  
Slag Inclusions ◽  
Aeronautical Industry ◽  
Testing Techniques ◽  
Lock In ◽  
Non Destructive

The ever wide use of composite materials in the aeronautical industry has evidenced the need for development of ever more effective nondestructive evaluation methodologies in order to reduce rejected parts and to optimize production costs. Infrared thermography has been recently enclosed amongst the standardized non destructive testing techniques, but its usefulness needs still complete assessment since it can be employed in several different arrangements and for many purposes. In this work, the possibility to detect slag inclusions and porosity is analyzed with both lock-in themography and pulse thermography in the transmission mode. To this end, carbon-fiber-peinforced polymers different specimens are specifically fabricated of several different stacking sequences and with embedded slag inclusions and porosity percentages. As main results, both of the techniques are found definitely able to reveal the presence of the defects above mentioned. Moreover, these techniques could be considered complementary in order to better characterize the nature of the detected defects.

Diagnoses the causes of cost deviation in Iraqi construction projects

2021 ◽  
Vol 14 (3) ◽  
pp. 36-50
Author(s):  
Eman Mahde ◽  
Nidal A. Jasim
Keyword(s):  
Construction Projects ◽  
Root Cause Analysis ◽  
Cause Analysis ◽  
Analysis Techniques ◽  
Root Cause ◽  
Analysis Tools ◽  
Fishbone Diagram ◽  
Implementation Method ◽  
Planning Group

Root cause analysis techniques are an excellent choice for identifying the root causes of cost deviation in Iraqi construction projects. Many root cause analysis tools, such as the Fishbone diagram (FD), Pareto diagram (PD), and 5-Why analysis, have started to emerge from the literature as standard guidelines for identifying root causes. This study identified eighteen causes of cost deviation in construction projects, which they classified into three major groups (planning causes, designing causes, and execution causes). Pareto study indicates that twelve causes out of eighteen represent the most significant causes of cost deviation. After that, these eleven causes were filtered by 5-Why analysis, which concluded that insufficient project information and the implementation method is not appropriate with the project type are root causes for the planning group, while unclear owner requirements and changes in design are root causes for the designing causes group, Finally, changes in orders is a root cause for execution group.

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