Infrared Thermography Developments for III-V Transistors and MMICs

2011 ◽  
Author(s):  
Dominique Carisetti ◽  
Mohsine Bouya ◽  
Odile Bezencenet ◽  
Bernard Servet ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Failure Analysis ◽  
Infrared Thermography ◽  
Hot Spot ◽  
Ir Thermography ◽  
Thermal Measurement ◽  
Metal Insulator ◽  
Spot Detection ◽  
Metal Insulator Metal ◽  
Thermal Measurements

Abstract This paper focuses on infrared (IR) thermography capabilities on III-V components for thermal measurements applications and failure analysis (FA). The first part discusses the thermal mapping on InGaAs/AlGaAs PHEMT structure and compares IR thermal measurement with the well-known techniques as Raman and SThM. The second part discusses IR thermography on challenging FA for hot spot detection on the most popular type of capacitor for III-V MMICs as the metal-insulator-metal capacitor. It shows how IR thermography can easily localize very small pinholes in SiN, where liquid crystal and OBIRCH techniques are not well adapted.

scholarly journals Design of a Liquid-Crystal-Tunable Terahertz Demultiplexer Based on a Metal-Insulator-Metal Waveguide

2019 ◽  
Vol 9 (4) ◽  
pp. 644
Author(s):  
Xue-Shi Li ◽  
Naixing Feng ◽  
Yuan-Mei Xu ◽  
Liang-Lun Cheng ◽  
Qing Liu
Keyword(s):  
Liquid Crystal ◽  
Electric Field ◽  
Metal Insulator ◽  
Resonance Modes ◽  
External Bias ◽  
Bias Electric Field ◽  
Metal Waveguide ◽  
Metal Insulator Metal ◽  
Fabry Perot ◽  
Mim Waveguide

A tunable demultiplexer with three output channels infiltrated by liquid crystal (LC) is presented, which is based on a metal-insulator-metal (MIM) waveguide. The operating frequencies of the three output channels can be tuned simultaneously at will by changing the external bias electric field applied to the LC. By analyzing the Fabry-Pérot (FP) resonance modes of the finite-length MIM waveguide both theoretically and numerically, the locations of the three channels are delicately determined to achieve the best demultiplexing effects. Terahertz (THz) signals input from the main channel can be demultiplexed by channels 1, 2 and 3 at 0.7135 THz, 1.068 THz and 1.429 THz, respectively. By applying an external electric field to alter the tilt angle of the infiltrating LC material, the operating frequencies of channels 1, 2 and 3 can be relatively shifted up to 12.3%, 9.6% and 9.7%, respectively. The designed demultiplexer can not only provide a flexible means to demultiplex signals but also tune operating bands of output channels at the same time.

scholarly journals Infrared Thermography applied to power electron devices investigation

2015 ◽  
Vol 28 (2) ◽  
pp. 205-212 ◽  
Author(s):  
Giovanni Breglio ◽  
Andrea Irace ◽  
Luca Maresca ◽  
Michele Riccio ◽  
Gianpaolo Romano ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Infrared Thermography ◽  
Semiconductor Devices ◽  
Electronic Devices ◽  
Experimental Characterization ◽  
Ir Thermography ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Electron Devices ◽  
Lock In

The aim of this paper is to give a presentation of the principal applications of Infrared Thermography for analysis and testing of electrondevices. Even though experimental characterization could be carried out on almost any electronic devices and circuits, here IR Thermography for investigation of power semiconductor devices is presented. Different examples of functional and failure analysis in both transient and lock-in modes will be reported.

scholarly journals Non-Destructive Characterization of Railway Materials and Components with Infrared Thermography Technique

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4077 ◽  
Author(s):  
Jeongguk Kim
Keyword(s):  
Infrared Thermography ◽  
Thermal Imaging ◽  
High Speed ◽  
Hot Spot ◽  
Imaging Techniques ◽  
Brake Disc ◽  
Ir Thermography ◽  
Contact Mode ◽  
Non Destructive Evaluation ◽  
Non Destructive

Infrared (IR) thermography technology is one of the leading non-destructive evaluation (NDE) techniques based on infrared detection. Infrared thermography, in particular, has the advantage of not only being used in non-contact mode but also provides full images, real-time inspection, and relatively fast results. These advantages make it possible to perform thermal imaging analysis of railway materials and/or components, such as brake disc simulation, monitoring of abnormal heat generation, and monitoring of temperature changes, during mechanical tests. This study introduces the current state of research on railway materials and/or components using IR thermography technology. An attempt was made to characterize the deterioration of electrical equipment of diesel electric locomotives using infrared thermal imaging techniques. In addition, surface temperature monitoring was performed during tensile testing of railway steels using a high-speed infrared camera. Damage evolution due to the hot spot generation of railway brake discs was successfully monitored using high-speed IR cameras. In this paper, IR thermal imaging technology, used as a non-destructive evaluation analysis in the railway field, was introduced, and the results of recent research are presented.

Backside Hot Spot Detection Using Liquid Crystal Microscopy

2002 ◽  
Vol 42 (9-11) ◽  
pp. 1741-1746 ◽  
Author(s):  
O. Crepel ◽  
F. Beaudoin ◽  
L. Dantas de Morais ◽  
G. Haller ◽  
C, Goupil ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Hot Spot ◽  
Spot Detection

The optimization of metal—Insulator—Metal nonlinear devices for use in multiplexed liquid crystal displays

1981 ◽  
Vol 28 (6) ◽  
pp. 736-739 ◽  
Author(s):  
D.R. Baraff ◽  
J.R. Long ◽  
B.K. MacLaurin ◽  
C.J. Miner ◽  
R.W. Streater
Keyword(s):  
Liquid Crystal ◽  
Liquid Crystal Displays ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Nonlinear Devices

Application of the Infrared Microscope (IREM1) for Flip-Chip (C4) Failure Analysis

1999 ◽  
Author(s):  
A. N. Zaplatin ◽  
F. J. Low ◽  
Steve Seidel ◽  
Valluri R. Rao ◽  
T. H. Loh
Keyword(s):  
Liquid Crystal ◽  
Failure Analysis ◽  
Flip Chip ◽  
Hot Spot ◽  
Spectral Response ◽  
Real Life ◽  
Fault Isolation ◽  
Front Side ◽  
Process Technology ◽  
Ir Emission

Abstract Today’s process technology requires ever-increasing number of metal layers to meet the power and layout needs of modern products. These advances have rendered many of the conventional fault isolation (FI) methods from the front side of the die obsolete. The flip-chip package not only brings about the need to localize defects at die level through the Si substrate, but also introduces the need to isolate new defects at the package level. Recently, an infrared (IR) emission microscope which utilizes the cryogenically cooled HgCdTe (MCT) imaging array having spectral response of 0.8μm- 2.5μm, for near IR emission detection was developed. This system supersedes the conventional CCD based emission microscope with a spectral response of 0.4 μm-1.1μm. Since spectral detection extends into the thermal spectral region, it also offers an added advantage of detecting thermal spots on the die and flip-chip package where liquid crystal hot spot detection method is not possible. This article is an account of the use of the Mercury-Cadmium- Telluride based IR detector for “real life” failures. The article will demonstrate key features of the system as well as several FI examples. Both emission and thermal detection modes will be discussed. The authors will present several problems, including melted die bumps and package copper trace shorts, that could not be detected through conventional failure analysis (FA) methods, such as liquid crystal or front side emission microscopy. The MCT detectors increased sensitivity and backside navigation capabilities coupled with backside die preparation has proven itself an indispensable FA tool in the high volume manufacturing environment.

TPLY for Yield Improvement

1996 ◽  
Author(s):  
G. Matusiewicz
Keyword(s):  
Liquid Crystal ◽  
Electron Microscope ◽  
Statistical Methods ◽  
Hot Spot ◽  
Test Site ◽  
Final Test ◽  
Yield Model ◽  
Yield Improvement ◽  
Root Cause ◽  
Spot Detection

Abstract A strategy for improving yield lately is this: wafers are electrically tested to determine which chips are defective. Defects are located and classified by the failure analyst who establishes a root cause for each type of defect. This information is delivered to the process engineers who then eliminate the root causes of the most frequently occurring defects. This process is known as TPLY. for Tested Product Limited Yield. This method gives the physical failure analyst the job of finding statistical numbers of defects. Defects are located by deprocessing chips and examining them with an optical or electron microscope, usually in an area of the chip identified by a bit fail map or some other technique, such as liquid crystal hot spot detection. This presentation offers practical suggestions for improving the efficiency of the TPLY process. It includes general considerations for TPLY, methods for delayering chips and finding defects quickly, and statistical methods for identifying the cause of low yield with minimum sample sizes. A simple yield model is developed for relating test site yield to product chip final test yield, and explains why test sites do not always adequately predict yield of the product. Case studies and other examples are discussed to demonstrate the application of these techniques.

A 68 line multiplexed liquid crystal display using metal-insulator-metal (MIM) devices

1980 ◽  
Author(s):  
D.R. Baraff ◽  
J.R. Long ◽  
B.K. MacLaurin ◽  
C.J. Miner ◽  
N.M. Serinken ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Liquid Crystal Display ◽  
Metal Insulator ◽  
Metal Insulator Metal
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