Advanced sub 0.13µm Cu Devices – Failure Analysis and Circuit Edit With Improved FIB Chemical Processes and Beam Characteristics

2002 ◽  
Author(s):  
J. David Casey ◽  
Thomas J. Gannon ◽  
Alex Krechmer ◽  
David Monforte ◽  
Nicholas Antoniou ◽  
...  
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Processes ◽  
Design Verification ◽  
End Point Detection ◽  
On Chip ◽  
Point Detection ◽  
Low K

Abstract Advances in FIB (focused ion beam) chemical processes and in the Ga (gallium) beam profile are discussed; these advances are necessary for the successful failure analysis, circuit edit and design verification of advanced, sub-0.13µm Cu devices. Included in this article are: a novel FIB method (CopperRx) for smoothly milling thick, large grained Cu lines; H2O and O2 processes for cleanly cutting thin, smaller grained Cu lines, thereby forming electrically open interconnects; a XeF2 GAE (gas assisted etching) process for etching low k, CVD dielectrics such as F and C doped SiO2; H2O and XeF2 GAE processes for etching low k, spin-on, organic dielectrics such as SiLK; a recently developed recipe for the deposition of SiO2 based material with intermediate resistivity (106 µohm·cm) which is useful in the design verification of frequency sensitive, high speed analog and SOC (system on chip) circuits; an improved, more Gaussian Ga beam with less current density in the beam tails (VisION column) which provides higher resolution, real time images needed for end-point detection on sub 0.13µm features during milling.

Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

2004 ◽  
Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Copper Interconnects ◽  
Wet Chemical ◽  
Low K ◽  
Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

Analysis of Successive Focused Ion Beam Slices by Scanning Electron Imaging and 3D Reconstruction

2005 ◽  
Vol 908 ◽  
Author(s):  
Terence Yeoh ◽  
Neil Ives ◽  
Nathan Presser ◽  
Gary Stupian ◽  
Martin Leung ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Complex Mixture ◽  
Dimensional Reconstruction ◽  
Microscope Imaging ◽  
End Point Detection ◽  
Electron Imaging ◽  
Point Detection ◽  
Scanning Electron

AbstractAn antifuse structure was analyzed using scanning electron microscope imaging and focused ion beam image slicing to generate a form of three-dimensional microscopy. This method reveals nanometer scale features that could not be easily imaged using a single focused ion beam cross-section. A novel end-point detection technique has been developed to control the thickness of the slice to about 2 nm. Voxel imaging and interpretive three-dimensional reconstruction was used to resolve volumes as small as 2 cubic nm3. It was determined that the fusing region for an antifuse is a complex mixture of material phases with an elliptical volume approximately 75 nm in diameter.

Automated End-Point Detection and Targeted Ar+ Milling of Advanced Integrated Circuit FIB TEM Specimens

2017 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
J.T. Harbaugh ◽  
M. Boccabella ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
End Point Detection ◽  
Point Detection ◽  
Argon Ion

Abstract The sub-nanometer resolution that transmission electron microscopy (TEM) provides is critical to the development and fabrication of advanced integrated circuits. TEM specimens are usually prepared using the focused ion beam, which can cause gallium-induced artifacts and amorphization. This work presents the use of a concentrated argon ion beam for reproducible TEM specimen preparation using automatic milling termination and targeted ion milling of device features; the result is high-quality and electron-transparent specimens of less than 30 nm. Such work is relevant for semiconductor product development and failure analysis.

Focused Ion Beam Sims for Micromachining Applications

1987 ◽  
Vol 101 ◽  
Author(s):  
L. R. Harriott ◽  
M. J. Vasile
Keyword(s):  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
High Yield ◽  
Ion Milling ◽  
End Point ◽  
Glass Interface ◽  
End Point Detection ◽  
Point Detection ◽  
Secondary Ion

ABSTRACTA secondary ion mass spectrometry (SIMS) system has been incorporated into the AT&T-BL second generation focused ion beam (FIB) micromachining system. The primary applications are end-point detection and topographical element mapping. End-point detection of Cr micromachining on photomasks was done with raster sizes ranging from 10 μm x 10 μm to 3 μm x 3 μm. SIMS end-points, total ions images, and transmitted light measurements show that the ion-milling can be controlled to stop prior to or after the Cr/glass interface. Mass selected secondary ion images have been obtained for high yield ions such as52Cr+ and27 A1+ on raster fields of 25 μm in time intervals ranging from 20 to 100 sec. Al+ SIMS images of 1 μm lines and spaces from a VLSI test pattern have been obtained.

scholarly journals Chip Recombination Method in Planar Deprocessing – A Solution for Failure Analysis on Chip Edge Defects

2021 ◽  
Author(s):  
Kah Chin Cheong ◽  
Gabriel Pragay ◽  
Wiwy Wudjud ◽  
Rafael Lainez
Keyword(s):  
Failure Analysis ◽  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Chip ◽  
Area Of Interest ◽  
Edge Defects ◽  
The Common ◽  
Effect Transistor ◽  
On Chip

Abstract Planar deprocessing is a vital failure analysis (FA) technique for semiconductor chip reverse engineering. The basic concept of planar deprocessing is to remove all the “unnecessary” materials of a chip to expose an area of interest (AOI) and maintain the chip planarity and surface evenness. Finger deprocessing is one of the common techniques applied to this concept. This technique is essential in physical FA, especially for advanced bulk fin field-effect transistor (FinFET) devices. The success of finger deprocessing technique depends on certain factors, one of which is the location of AOI region. Application of finger deprocessing becomes incredibly challenging for AOI close to chip edge due to the chip edge effect, i. e. the chip edge is deprocessed much faster than the chip center. Plasma focused ion beam (PFIB) planar deprocessing is the primary solution to solve this problem. However, the PFIB capability is a luxury tool for most analysis labs. To overcome this challenge, a novel chip recombination method is introduced. With this method, planar deprocess can be achieved by conventional finger deprocessing technique and more importantly can be applied in general analysis labs. This paper will discuss the newly developed method in a step-by-step guide basis and show two cases with AOI(s) in the chip edge region to demonstrate its capability.

Second Order Effect Monitoring During Backside Milling for Functional End Point Detection

2019 ◽  
Author(s):  
Anthony George ◽  
Isaac Goldthwaite ◽  
Katie Liszewski ◽  
Jeremiah Schley ◽  
Thomas Kent
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Second Order ◽  
Order Effects ◽  
Back Side ◽  
End Point ◽  
End Point Detection ◽  
Second Order Effects ◽  
Point Detection

Abstract Backside silicon removal provides an avenue for a number of modern non-destructive and circuit edit techniques. Visible light microscopy, electron beam microscopy, and focused ion beam circuit edit benefit from a removal of back side silicon from the integrated circuit being examined. Backside milling provides a potential path for rapid sample preparation when thinned or ultrathinned samples are required. However, backside milling is an inherently destructive process and can damage the device function, rendering it no longer useful for further nondestructive analysis. Recent methods of backside milling do not guarantee device functionality at a detected end point without a priori knowledge. This work presents a methodology for functional end point detection during backside milling of integrated circuit packaging. This is achieved by monitoring second order effects in response to applied device strain, which guide the milling procedure, avoiding destructive force as the backside material is removed. Experimental data suggest a correlation between device power consumption waveforms and second order effects which inform an in situ functional end point. Keywords: functional end point, side-channel analysis, backside thinning, milling, machine learning, second order effects

Novel Plasma FIB/SEM for High Speed Failure Analysis and Real Time Imaging of Large Volume Removal

2012 ◽  
Author(s):  
T. Hrnčíř ◽  
F. Lopour ◽  
M. Zadražil ◽  
A. Delobbe ◽  
O. Salord ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Cross Sections ◽  
Large Volume ◽  
Metal Ion ◽  
High Speed ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Protective Layer ◽  
Ion Source ◽  
Rough Milling

Abstract The standard Ga focused ion beam (FIB) technology is facing challenges because of a request for large volume removal. This is true in the field of failure analysis. This article presents the first combined tool which can fulfill this requirement. This tool offers the combination of a high resolution scanning electron microscope (SEM) and a high current FIB with Xe plasma ion source. The article focuses on failure analysis examples and discusses the different steps of extra large cross sections (deposition of protective layer, rough milling, and polishing). Several applications of the novel Xe plasma FIB/SEM instrument are shown with respect to the failure analysis. The performance of the instrument is tested and discussed in comparison to gallium liquid metal ion source FIB systems. Results show that the Xe plasma FIB offers much higher milling rate, greatly reducing the time necessary for many failure analysis tasks.

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