Application of Scanning Probe Microscopy Techniques with Electrical Modules in Via Related Defects

Author(s):  
Xiang-Dong Wang ◽  
N. David Theodore ◽  
Gil Garteiz ◽  
Paul Sanders

Abstract Identifying defects in marginally failed vias has long been a challenge for failure analysis (FA) of state-of-the-art semiconductor integrated circuits. This paper presents two cases where a conventional FA approach is found to not be effective. The first case involves high resistance or marginally open vias. The second case involves early breakdown of large capacitors. The large size of the capacitor and the lack of ways to track electrical flow during diagnosis made it difficult to isolate the defect. The paper shows that conducting atomic force microscopy (C-AFM) and scanning capacitance microscopy (SCM) are effective techniques for isolation of via-related defects. The SCM technique could be applied to samples without a direct conducting path to the substrate, such as SOI samples. On the other hand, C-AFM allows current imaging as well as I-V characterization whenever a direct conductive path is available.

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 1-21 ◽  
Author(s):  
XIAN NING XIE ◽  
HONG JING CHUNG ◽  
ANDREW THYE SHEN WEE

Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.


2012 ◽  
Vol 20 (5) ◽  
pp. 46-51

Microscopy Today congratulates the third annual group of Innovation Award winners. The ten innovations described below move several microscopy techniques forward: atomic force microscopy, transmission electron microscopy, light microscopy, scanning probe microscopy, electron microscopy, and analytical microscopy. These innovations will make imaging and analysis more powerful, more flexible, more productive, and easier to accomplish.


1993 ◽  
Vol 318 ◽  
Author(s):  
James D. Kiely ◽  
Dawn A. Bonnell

ABSTRACTScanning Tunneling and Atomic Force Microscopy were used to characterize the topography of fractured Au /sapphire interfaces. Variance analysis which quantifies surface morphology was developed and applied to the characterization of the metal fracture surface of the metal/ceramic system. Fracture surface features related to plasticity were quantified and correlated to the fracture energy and energy release rate.


1996 ◽  
Vol 461 ◽  
Author(s):  
Ph. Leclère ◽  
J. M. Yu ◽  
R. Lazzaroni ◽  
Ph. Dubois ◽  
R. JéRôme ◽  
...  

ABSTRACTAtomic Force Microscopy with Phase Detection Imaging is used to study the surface microdomain morphology of thick (i.e., ca. 2 mm) films of triblock copolymers, such as polymethylmethacrylate - block - polybutadiene - block - polymethylmethacrylate copolymers prepared by a well-taylored two-step sequential copolymerization promoted by a 1,3-diisopropenylbenzene based difunctional anionie initiator. By means of this new scanning probe microscopy technique, it is shown that the surface exhibits a segregated microphase structure, corresponding to the different types of components predicted theoretically by thermodynamic processes. We investigate the relationships between the size and characteristics of the microdomain structure as a function of the molecular parameters of the constituent polymers. Our data illustrate the interest of Phase Detection Imaging in the elucidation of surface phase separation in block copolymers.


1999 ◽  
Vol 123 (1) ◽  
pp. 35-43 ◽  
Author(s):  
D. Croft ◽  
G. Shed ◽  
S. Devasia

This article studies ultra-high-precision positioning with piezoactuators and illustrates the results with an example Scanning Probe Microscopy (SPM) application. Loss of positioning precision in piezoactuators occurs (1) due to hysteresis during long range applications, (2) due to creep effects when positioning is needed over extended periods of time, and (3) due to induced vibrations during high-speed positioning. This loss in precision restricts the use of piezoactuators in high-speed positioning applications like SPM-based nanofabrication, and ultra-high-precision optical systems. An integrated inversion-based approach is presented in this article to compensate for all three adverse affects—creep, hysteresis, and vibrations. The method is applied to an Atomic Force Microscope (AFM) and experimental results are presented that demonstrate substantial improvements in positioning precision and operating speed.


2006 ◽  
Vol 59 (6) ◽  
pp. 359 ◽  
Author(s):  
Pall Thordarson ◽  
Rob Atkin ◽  
Wouter H. J. Kalle ◽  
Gregory G. Warr ◽  
Filip Braet

Scanning probe microscopy (SPM) techniques, including atomic force microscopy (AFM) and scanning tunnelling microscopy (STM), have revolutionized our understanding of molecule–surface interactions. The high resolution and versatility of SPM techniques have helped elucidate the morphology of adsorbed surfactant layers, facilitated the study of electronically conductive single molecules and biomolecules connected to metal substrates, and allowed direct observation of real-time processes such as in situ DNA hybridization and drug–cell interactions. These examples illustrate the power that SPM possesses to study (bio)molecules on surfaces and will be discussed in depth in this review.


2011 ◽  
Vol 84-85 ◽  
pp. 392-395
Author(s):  
Agus Geter Edy Sutjipto ◽  
Waleed Fekry Faris ◽  
Erry Y.T. Adesta ◽  
Hafizah Hanim

The development of the various scanning probe microscopy techniques has revolutionized the study of surface structure up to atomic scale. Among these techniques, Nanoeducator as scanning force microscope or SFM has been developed to allow the accomplishment of various measuring techniques both for scanning tunneling microscope (STM) and non-contact atomic force microscope (AFM). However, there is no exact guidance how to fabricate cantilever to gather the good image. In order to achieve the better cantilever for students, this paper emphasizes on tip’s processing by altering etching length parameter as tip plays an important role to achieve better quality image during scanning operation. This paper also provides a guide for undergraduate student to know better about this machine as well as the principle behind it for them to acquire better quality image for their works. It was found that the number of turning of tungsten and etching time could produce good tip of cantilever. It is recommended for lecturers, students and technician to consider about turning and time of etching to produce a better tip of cantilever in Nanoeducator.


2010 ◽  
Vol 645-648 ◽  
pp. 767-770 ◽  
Author(s):  
Sergey P. Lebedev ◽  
P.A. Dement’ev ◽  
Alexander A. Lebedev ◽  
V.N. Petrov ◽  
Alexander N. Titkov

Atomic-force microscopy and scanning tunnel electron microscopy have been used to study the surface of single-crystal 6H-SiC (0001) substrates subjected to step-by-step high-temperature annealing in vacuum. An annealing procedure leading to surface structuring by atomically smooth steps with heights of 0.75 and 1.5 nm has been found. It is suggested to use the structured surfaces as test objects for z-calibration of scanning probe microscopes.


2018 ◽  
Vol 60 (2) ◽  
pp. 255
Author(s):  
А.Е. Почтенный ◽  
А.Н. Лаппо ◽  
И.П. Ильюшонок

AbstractSome results of studying the direct-current (DC) conductivity of perylenetetracarboxylic acid dimethylimide films by cyclic oxygen thermal desorption are presented. The microscopic parameters of hopping electron transport over localized impurity and intrinsic states were determined. The bandgap width and the sign of major current carriers were determined by scanning probe microscopy methods (atomic force microscopy, scanning probe spectroscopy, and photoassisted Kelvin probe force microscopy). The possibility of the application of photoassisted scanning tunneling microscopy for the nanoscale phase analysis of photoconductive films is discussed.


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