Advanced Fault Localization through the Use of Tester Based Diagnostics with LVI, LVP, CPA, and PEM

2013 ◽  
Author(s):  
Laura Safran ◽  
John Sylvestri ◽  
Dave Albert ◽  
Zhigang Song ◽  
Patrick McGinnis
Keyword(s):  
Technology Development ◽  
Photon Emission ◽  
Fault Localization ◽  
Parameter Analysis ◽  
Advanced Technology ◽  
Tem Analysis ◽  
Voltage Imaging ◽  
First Case ◽  
Emission Microscopy ◽  
Scan Chain

Abstract Fault localization on functional macros during advanced technology development requires a complex combination of tester based diagnostics and image based techniques including laser voltage imaging (LVI), laser voltage probing (LVP), critical parameter analysis (CPA) with laser stimulation and photon emission microscopy (PEM). These techniques are exemplified in the following three case studies. The first case involves a voltage sensitive SRAM block fail which was localized to a resistive via through the use of CPA, LVI and LVP. The second case demonstrates how a hard fail (a net-to-net metal short) in a scan chain was localized through use of tester based diagnostics, LVI, LVP and PEM. Finally, the last case shows how a condition sensitive failing latch chain was localized through CPA, LVI, LVP and PEM. Subsequent atomic force probing (AFP) identified source-drain leakage in one of the localized devices, and TEM analysis revealed a dislocation in the failing FET. Each of these cases demonstrates the value in utilizing tester based diagnostics along with laser based imaging and photon emission microscopy to localize failures.

Yield and Failure Analysis of FinFET Source to Drain Leakage in 12nm Technology

2020 ◽  
Author(s):  
Felix Beaudoin ◽  
Satish Kodali ◽  
Rohan Deshpande ◽  
Wayne Zhao ◽  
Edmund Banghart ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Localization ◽  
Detailed Characterization ◽  
Laser Stimulation ◽  
Emission Microscopy ◽  
Scan Chain ◽  
Multiple Samples ◽  
Tem Lamella ◽  
Diffusion Activation

Abstract Fault localization using both dynamic laser stimulation and emission microscopy was used to localize the failing transistors within the failing scan chain latch on multiple samples. Nanoprobing was then performed and the source to drain leakage in N-type FinFETs was identified. After extensive detailed characterization, it was concluded that the N-type dopant signal was likely due to projections from the source/drain regions included in the TEM lamella. Datamining identified the scan chain fail to be occurring uniquely for a specific family of tools used during source/drain implant diffusion activation. This paper discusses the processes involved in yield delta datamining of FinFET and its advantages over failure characterization, fault localization, nanoprobing, and physical failure analysis.

Ultra-Low Frequency Laser Voltage Imaging of Mixed-Signal Designs

2017 ◽  
Author(s):  
Tobias Schmidutz ◽  
Charlotte Hoyler ◽  
Zhongling Qian ◽  
Christof Brillert ◽  
Christian Burmer
Keyword(s):  
Power Supply ◽  
Analog Circuit ◽  
Photon Emission ◽  
Low Frequency ◽  
Low Frequencies ◽  
Voltage Imaging ◽  
First Case ◽  
Analog Part ◽  
Electric Behavior ◽  
Frequency Laser

Abstract During the last years, laser reflectance modulation measurements (i.e. LVI, CW-SIP etc.) have become indispensable tools for the analysis of logic circuits at frequencies in the megahertz range. In this paper we present a method to extend the usefulness of these methods to mixedsignal circuits driven at ultra-low frequencies in the kilohertz range. We show that by toggling the main power supply, information of the electric behavior can be easily obtained from analog structures, removing the need for tester-based stimulation. This method proved especially useful for the debugging of chip startup failures. We demonstrate this with two case studies. In a first case, a defect in the analog part shut down the digital part of the chip. This prevented the use of debugging methods such as the read-out of error registers or the use of scan chains. Conventional methods like photon emission microscopy and thermal laser stimulation were also not successful at finding the problem. However, laser-voltage imaging (LVI) of the analog circuit at key locations while toggling the chip power supply in the kilohertz range led us to the failing net. In a second case on a different product, we similarly identified a failing capacitor in the error logic by modulating the chip enable pin in the kilohertz range.

Static fault localization of subtle metallization defects using near infrared photon emission microscopy

2017 ◽  
Vol 73 ◽  
pp. 76-91 ◽  
Author(s):  
A.C.T. Quah ◽  
D. Nagalingam ◽  
S. Moon ◽  
E. Susanto ◽  
G.B. Ang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Photon Emission ◽  
Fault Localization ◽  
Infrared Photon ◽  
Emission Microscopy

Fault Localization of Metal Defects with Si-CCD Camera in Analog Device Functional Failure

2013 ◽  
Author(s):  
Stephane Alves ◽  
Philippe Rousseille ◽  
Thomas Zirilli
Keyword(s):  
Photon Emission ◽  
Fault Localization ◽  
Ccd Camera ◽  
Analog Device ◽  
Functional Failure ◽  
Emission Microscopy

Abstract This paper presents a case study on photon emission from metals and demonstrates the capability of Emission Microscopy Si-CCD camera to detect micro metal bridges on functional failures of Analog devices.

A Novel Method/Model for Fault Localization of a Subtle Open on a Large Thin-Film Resistor, Using Photon Emission Microscopy Technique and Electric Field Mechanism

2017 ◽  
Author(s):  
Vikash Kumar ◽  
Marian Udrea-Spenea
Keyword(s):  
Thin Film ◽  
Fault Location ◽  
Photon Emission ◽  
Fault Localization ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Microscopy Technique ◽  
Novel Method ◽  
Emission Microscopy ◽  
Method Model

Abstract Photon Emission Microscopy (PEM) is one of the commonly used and powerful techniques for fault localization which uses a sensitive camera (like CCD or InGaAs) to detect a light (photon) emission from an electrically biased device. The fault localization of an open anomaly can be a challenge for the failure analysis. This paper discusses a novel technique for localization of an open fault on a thin-film resistor using induced photoemission method. In this proposed method, an emission site is induced at the open fault location on the thin-film resistor. This method was found to be effective and it increases the success rate for an open fault localization on a thin-film resistor.

Accelerating Technology Development and Yield Ramp on First Silicon Utilizing a Wafer-Level Dynamic EFA System

2016 ◽  
Author(s):  
Li-Qing Chen ◽  
Ming-Sheng Sun ◽  
Jui-Hao Chao ◽  
Soon Fatt Ng ◽  
Kapilevich Izak ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
Photon Emission ◽  
Wafer Level ◽  
Success Story ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Soft Failure ◽  
Scan Chain ◽  
Hard Failure

Abstract This paper presents the success story of the learning process by reporting four cases using four different failure analysis techniques. The cases covered are IDDQ leakage, power short, scan chain hard failure, and register soft failure. Hardware involved in the cases discussed are Meridian WS-DP, a wafer-level electrical failure analysis (EFA) system from DCG Systems, V9300 tester from Advantest, and a custom cable interface integrating WSDP and V9300 with the adaption of direct-probe platform that is widely deployed for SoC CP test. Four debug cases are reported in which various EFA techniques are proven powerful and effective, including photon emission, OBIRCH, Thermal Frequency Imaging, LVI, LVP, and dynamic laser stimulation.

Comparison of Photon and Thermal Emission Microscopy for Dynamic Fault Isolation

2015 ◽  
Author(s):  
S.H. Goh ◽  
G.F. You ◽  
Alan Tan ◽  
C.V. Bharadwaj ◽  
Hu Hao ◽  
...  
Keyword(s):  
Thermal Emission ◽  
Photon Emission ◽  
Fault Localization ◽  
Optical Resolution ◽  
Fault Isolation ◽  
Thermal Microscopy ◽  
Emission Microscopy

Abstract Unlike photon emission microscopy which is usually the first go-to technique in tester-based or dynamic electrical fault localization, infrared thermal microscopy does not play a similar routine role despite its comparable ease in application. While thermal emission lacks in optical resolution, we demonstrate superior sensitivity and accuracy over photon emission on dynamic fault localization of backend-of-line short defects.

Interpreting Laser-Based Fault Localization Results: Case Studies

2019 ◽  
Author(s):  
Sukho Lee ◽  
John van den Biggelaar ◽  
Marc van Veenhuizen
Keyword(s):  
Case Studies ◽  
Circuit Design ◽  
High Sensitivity ◽  
Failure Behavior ◽  
Process Technology ◽  
Resistance Change ◽  
Voltage Imaging ◽  
Root Cause ◽  
First Case ◽  
Proper Interpretation

Abstract Laser-based dynamic analysis has become a very important tool for analyzing advanced process technology and complex circuit design. Thus, many good reference papers discuss high resolution, high sensitivity, and useful applications. However, proper interpretation of the measurement is important as well to understand the failure behavior and find the root cause. This paper demonstrates this importance by describing two insightful case studies with unique observations from laser voltage imaging/laser voltage probing (LVP), optical beam induced resistance change, and soft defect localization (SDL) analysis, which required an in-depth interpretation of the failure analysis (FA) results. The first case is a sawtooth LVP signal induced by a metal short. The second case, a mismatched result between an LVP and SDL analysis, is a good case of unusual LVP data induced by a very sensitive response to laser light. The two cases provide a good reference on how to properly explain FA results.

Sign in / Sign up

Export Citation Format

Share Document