Comparison of Photon and Thermal Emission Microscopy for Dynamic Fault Isolation

2015 ◽  
Author(s):  
S.H. Goh ◽  
G.F. You ◽  
Alan Tan ◽  
C.V. Bharadwaj ◽  
Hu Hao ◽  
...  
Keyword(s):  
Thermal Emission ◽  
Photon Emission ◽  
Fault Localization ◽  
Optical Resolution ◽  
Fault Isolation ◽  
Thermal Microscopy ◽  
Emission Microscopy

Abstract Unlike photon emission microscopy which is usually the first go-to technique in tester-based or dynamic electrical fault localization, infrared thermal microscopy does not play a similar routine role despite its comparable ease in application. While thermal emission lacks in optical resolution, we demonstrate superior sensitivity and accuracy over photon emission on dynamic fault localization of backend-of-line short defects.

Thermal Failure Analysis of Functional Failures by IR Lock-in Thermal Emission

2019 ◽  
Author(s):  
Paul Hubert P. Llamera ◽  
Camille Joyce G. Garcia-Awitan
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Near Infrared ◽  
Thermal Emission ◽  
Fault Localization ◽  
Fault Isolation ◽  
Distinct Advantage ◽  
Infra Red ◽  
Emission Microscopy ◽  
Lock In

Abstract Lock-in thermography (LIT), known as a powerful nondestructive fault localization technique, can also be used for microscopic failure analysis of integrated circuits (ICs). The dynamic characteristic of LIT in terms of measurement, imaging and sensitivity, is a distinct advantage compared to other thermal fault localization methods as well as other fault isolation techniques like emission microscopy. In this study, LIT is utilized for failure localization of units exhibiting functional failure. Results showed that LIT was able to point defects with emissions in the mid-wave infra-red (MWIR) range that Photo Emission Microscopy (PEM) with near infrared (NIR) to short- wave infra-red (SWIR) detection wavelength sensitivity cannot to detect.

Debug and Fault Isolation of an RF/IF Circuit for 3G Cellular Applications With High Leakage: A Case Study

2002 ◽  
Author(s):  
Syd Wilson ◽  
Manoj Nair ◽  
Michael Vicker ◽  
Richard B. Meador ◽  
George Smoot ◽  
...  
Keyword(s):  
Leakage Current ◽  
Integrated Circuit ◽  
Photon Emission ◽  
Cost Effective ◽  
Fault Isolation ◽  
Cellular Phones ◽  
Third Generation ◽  
Mixed Signal ◽  
Emission Microscopy

Abstract First silicon of a cost effective, BICMOS mixed signal RF/IF integrated circuit (IC) for third generation (3G) cellular phones showed high leakage current on the analog receive supply pins in “battery save” mode. Our tasks were to identify and isolate the source of leakage and to fix the design. Alternate debug techniques were used to isolate the cause of the leakage and provide a solution after inconclusive results were obtained using photon emission microscopy,(1) and infrared microthermography techniques.

Scanning SQUID Microscopy for Die Level Fault Isolation

2002 ◽  
Author(s):  
David P. Vallett
Keyword(s):  
Liquid Crystal ◽  
Photon Emission ◽  
Fault Isolation ◽  
Induced Voltage ◽  
Sem Images ◽  
Thermal Mapping ◽  
Localized Defects ◽  
Emission Microscopy ◽  
Scanning Squid ◽  
Scanning Squid Microscopy

Abstract This paper presents detailed results of scanning SQUID microscopy (SSM) analyses performed on the frontside and backside of both loose and packaged die. Optical and SEM images of localized defects are shown. Comparisons with alternative physical fault isolation (PFI) techniques like liquid crystal (LC), Schlieren thermal mapping (STM), temperature induced voltage alteration (TIVA), and photon emission microscopy (PEM) are included. Finally, limitations with and potential improvements for die level SSM are also discussed.

Static fault localization of subtle metallization defects using near infrared photon emission microscopy

2017 ◽  
Vol 73 ◽  
pp. 76-91 ◽  
Author(s):  
A.C.T. Quah ◽  
D. Nagalingam ◽  
S. Moon ◽  
E. Susanto ◽  
G.B. Ang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Photon Emission ◽  
Fault Localization ◽  
Infrared Photon ◽  
Emission Microscopy

Backside Sample Preparation Challenges for Fault Localization Analysis of Flip Chip Package

2013 ◽  
Author(s):  
Lihong Cao ◽  
Donna Wallace ◽  
Lynda Tuttle ◽  
Kirk Martin
Keyword(s):  
Image Quality ◽  
Flip Chip ◽  
Thermal Emission ◽  
Photon Emission ◽  
Fault Isolation ◽  
Isolation Techniques ◽  
High Uniformity ◽  
Localization Analysis ◽  
Mechanical Thinning ◽  
The Impact

Abstract Mechanical thinning of Si die backside was introduced to support fault isolation for flip chip package in this paper. The backside milling system provides two types of thinning with good die planarity and mirror polishing to yield a high image quality for fault isolation techniques such as laser base thermal emission and photon emission techniques. In this paper, two mechanical thinning techniques were applied by using the 3D die curvature thinning and 2D planar thinning on flip chip Si backside. The impact of process parameters on die planarity and fault isolation were also discussed. The experimental results demonstrate the milling system’s high uniformity across the large die size and provide a very good solution for fault isolation techniques.

Fault Localization of Metal Defects with Si-CCD Camera in Analog Device Functional Failure

2013 ◽  
Author(s):  
Stephane Alves ◽  
Philippe Rousseille ◽  
Thomas Zirilli
Keyword(s):  
Photon Emission ◽  
Fault Localization ◽  
Ccd Camera ◽  
Analog Device ◽  
Functional Failure ◽  
Emission Microscopy

Abstract This paper presents a case study on photon emission from metals and demonstrates the capability of Emission Microscopy Si-CCD camera to detect micro metal bridges on functional failures of Analog devices.

Verification of DLS Data by LVP in Case of Marginal Failure

2016 ◽  
Author(s):  
Keonil Kim ◽  
Sungjin Kim ◽  
Kunjae Lee ◽  
Kyeongju Jin ◽  
Yunwoo Lee ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Fault Location ◽  
Photon Emission ◽  
Fault Localization ◽  
Fault Isolation ◽  
The Real ◽  
Defect Isolation ◽  
The Relationship ◽  
Non Destructive

Abstract In most of the non-destructive electrical fault isolation cases, techniques such as DLS, Photon Emission, LIT, OBIRCH indicate a fault location directly. But relying on just one of these techniques for marginal failure mechanism is not enough for better fault localization. When Failure Analysis (FA) engineers encounter high NDF (No Defect Found) rates, by using only one of the techniques, they may need to consider the relationship between the responded locations by different techniques and fail phenomenon for better defect isolation. This paper talks about how a responded DLS location does not always indicate a fault location and how LVP data collected using DLS location can pin point the real defect location.

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