Fault Localization of Metal Defects with Si-CCD Camera in Analog Device Functional Failure

2013 ◽  
Author(s):  
Stephane Alves ◽  
Philippe Rousseille ◽  
Thomas Zirilli
Keyword(s):  
Photon Emission ◽  
Fault Localization ◽  
Ccd Camera ◽  
Analog Device ◽  
Functional Failure ◽  
Emission Microscopy

Abstract This paper presents a case study on photon emission from metals and demonstrates the capability of Emission Microscopy Si-CCD camera to detect micro metal bridges on functional failures of Analog devices.

Debug and Fault Isolation of an RF/IF Circuit for 3G Cellular Applications With High Leakage: A Case Study

2002 ◽  
Author(s):  
Syd Wilson ◽  
Manoj Nair ◽  
Michael Vicker ◽  
Richard B. Meador ◽  
George Smoot ◽  
...  
Keyword(s):  
Leakage Current ◽  
Integrated Circuit ◽  
Photon Emission ◽  
Cost Effective ◽  
Fault Isolation ◽  
Cellular Phones ◽  
Third Generation ◽  
Mixed Signal ◽  
Emission Microscopy

Abstract First silicon of a cost effective, BICMOS mixed signal RF/IF integrated circuit (IC) for third generation (3G) cellular phones showed high leakage current on the analog receive supply pins in “battery save” mode. Our tasks were to identify and isolate the source of leakage and to fix the design. Alternate debug techniques were used to isolate the cause of the leakage and provide a solution after inconclusive results were obtained using photon emission microscopy,(1) and infrared microthermography techniques.

Static fault localization of subtle metallization defects using near infrared photon emission microscopy

2017 ◽  
Vol 73 ◽  
pp. 76-91 ◽  
Author(s):  
A.C.T. Quah ◽  
D. Nagalingam ◽  
S. Moon ◽  
E. Susanto ◽  
G.B. Ang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Photon Emission ◽  
Fault Localization ◽  
Infrared Photon ◽  
Emission Microscopy

Systematic EFA Approach in Locating Floating Nodes in Analog Mixed Signal Devices

2011 ◽  
Author(s):  
Sagar Karki
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Photon Emission ◽  
Timely Manner ◽  
Critical Step ◽  
Isolation Techniques ◽  
Emission Microscopy ◽  
Digital Circuitry

Abstract With advancements in technology, it is nearly impossible to find the defects in integrated circuits without applying appropriate failure isolation techniques. Failure isolation is a critical step in identifying the physical defect on integrated circuits. This paper addresses the challenges imposed by floating node conditions on both analog and digital circuitry, and a case study for each circuit type is presented. Different approaches along with the challenges involved in isolating each case in a very timely manner are addressed. Finally, the usefulness of global isolation tools, such as PEM (Photon Emission Microscopy), FIB (Focused Ion Beam), and micro-probing, is also discussed.

A Novel Method/Model for Fault Localization of a Subtle Open on a Large Thin-Film Resistor, Using Photon Emission Microscopy Technique and Electric Field Mechanism

2017 ◽  
Author(s):  
Vikash Kumar ◽  
Marian Udrea-Spenea
Keyword(s):  
Thin Film ◽  
Fault Location ◽  
Photon Emission ◽  
Fault Localization ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Microscopy Technique ◽  
Novel Method ◽  
Emission Microscopy ◽  
Method Model

Abstract Photon Emission Microscopy (PEM) is one of the commonly used and powerful techniques for fault localization which uses a sensitive camera (like CCD or InGaAs) to detect a light (photon) emission from an electrically biased device. The fault localization of an open anomaly can be a challenge for the failure analysis. This paper discusses a novel technique for localization of an open fault on a thin-film resistor using induced photoemission method. In this proposed method, an emission site is induced at the open fault location on the thin-film resistor. This method was found to be effective and it increases the success rate for an open fault localization on a thin-film resistor.

Advanced Fault Localization through the Use of Tester Based Diagnostics with LVI, LVP, CPA, and PEM

2013 ◽  
Author(s):  
Laura Safran ◽  
John Sylvestri ◽  
Dave Albert ◽  
Zhigang Song ◽  
Patrick McGinnis
Keyword(s):  
Technology Development ◽  
Photon Emission ◽  
Fault Localization ◽  
Parameter Analysis ◽  
Advanced Technology ◽  
Tem Analysis ◽  
Voltage Imaging ◽  
First Case ◽  
Emission Microscopy ◽  
Scan Chain

Abstract Fault localization on functional macros during advanced technology development requires a complex combination of tester based diagnostics and image based techniques including laser voltage imaging (LVI), laser voltage probing (LVP), critical parameter analysis (CPA) with laser stimulation and photon emission microscopy (PEM). These techniques are exemplified in the following three case studies. The first case involves a voltage sensitive SRAM block fail which was localized to a resistive via through the use of CPA, LVI and LVP. The second case demonstrates how a hard fail (a net-to-net metal short) in a scan chain was localized through use of tester based diagnostics, LVI, LVP and PEM. Finally, the last case shows how a condition sensitive failing latch chain was localized through CPA, LVI, LVP and PEM. Subsequent atomic force probing (AFP) identified source-drain leakage in one of the localized devices, and TEM analysis revealed a dislocation in the failing FET. Each of these cases demonstrates the value in utilizing tester based diagnostics along with laser based imaging and photon emission microscopy to localize failures.

Comparison of Photon and Thermal Emission Microscopy for Dynamic Fault Isolation

2015 ◽  
Author(s):  
S.H. Goh ◽  
G.F. You ◽  
Alan Tan ◽  
C.V. Bharadwaj ◽  
Hu Hao ◽  
...  
Keyword(s):  
Thermal Emission ◽  
Photon Emission ◽  
Fault Localization ◽  
Optical Resolution ◽  
Fault Isolation ◽  
Thermal Microscopy ◽  
Emission Microscopy

Abstract Unlike photon emission microscopy which is usually the first go-to technique in tester-based or dynamic electrical fault localization, infrared thermal microscopy does not play a similar routine role despite its comparable ease in application. While thermal emission lacks in optical resolution, we demonstrate superior sensitivity and accuracy over photon emission on dynamic fault localization of backend-of-line short defects.

Case Study: Combined Dynamic Laser Stimulation and Static Emission Microscopy Techniques Applied to Scan Test Failure on Mixed Mode Device

2012 ◽  
Author(s):  
Magdalena Sienkiewicz ◽  
Philippe Rousseille
Keyword(s):  
Mixed Mode ◽  
Laser Stimulation ◽  
Scan Test ◽  
Silicon Bulk ◽  
Defect Localization ◽  
Emission Microscopy ◽  
Microscopy Techniques ◽  
Test Failure

Abstract This paper presents a case study on scan test reject in a mixed mode IC. It focuses on the smart use of combined mature FA techniques, such as Soft Defect Localization (SDL) and emission microscopy (EMMI), to localize a random scan test anomaly at the silicon bulk level.

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

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