Fault Isolation Using Time Domain Reflectometry, Electro Optical Terahertz Pulse Reflectometry and Time Domain Transmissometry

2019 ◽  
pp. 132-143
Author(s):  
Hemachandar Tanukonda Devarajulu ◽  
Deepak Goyal ◽  
Mayue Xie
Keyword(s):  
Time Domain ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Terahertz Pulse

Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip Package

2012 ◽  
Author(s):  
Lihong Cao ◽  
Manasa Venkata ◽  
Meng Yeow Tay ◽  
Wen Qiu ◽  
J. Alton ◽  
...  
Keyword(s):  
Time Domain ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Experimental Results ◽  
Terahertz Pulse ◽  
Isolation And Identification ◽  
Isolation Technique ◽  
Non Destructive

Abstract Electro-optical terahertz pulse reflectometry (EOTPR) was introduced last year to isolate faults in advanced IC packages. The EOTPR system provides 10μm accuracy that can be used to non-destructively localize a package-level failure. In this paper, an EOTPR system is used for non-destructive fault isolation and identification for both 2D and 2.5D with TSV structure of flip-chip packages. The experimental results demonstrate higher accuracy of the EOTPR system in determining the distance to defect compared to the traditional time-domain reflectometry (TDR) systems.

Electro Optical Terahertz Pulse Reflectometry—A Fast and Highly Accurate Non-Destructive Fault Isolation Technique for 3D Flip Chip Packages

2013 ◽  
Author(s):  
Stephane Barbeau ◽  
Jesse Alton ◽  
Martin Igarashi
Keyword(s):  
Time Domain ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Terahertz Pulse ◽  
Through Silicon Via ◽  
Isolation Technique ◽  
Non Destructive ◽  
Non Destructive Techniques

Abstract Electro Optical Terahertz Pulse Reflectometry (EOTPR), a terahertz based Time Domain Reflectometry (TDR) technique, has been evaluated on Flip Chip (FC) and 3D packages. The reduced size and complexity of these new generations of advanced IC products necessitate non-destructive techniques with increased fault isolation accuracy. The minimum accuracy achievable with conventional TDR is approximately 1000μm. Here, we show that EOTPR is able to differentiate all of the critical features in a 3D FC package, such as μC4 and Through Silicon Via (TSV), and is capable of producing distance-to-defect accuracy of less than 20μm, a significant improvement over conventional microwave based TDR techniques.

Feature Based Nondestructive Fault Isolation in Advanced IC Packages

2014 ◽  
Author(s):  
K.C. Lee ◽  
J. Alton ◽  
M. Igarashi ◽  
S. Barbeau
Keyword(s):  
Time Domain ◽  
Integrated Circuit ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Device Under Test ◽  
Terahertz Pulse ◽  
Innovative Technique ◽  
Internal Structures ◽  
Feature Based ◽  
Ic Package

Abstract Traditional time domain reflectometry (TDR) techniques employ time-based information to locate faults within packages with minimal references to internal structures. Here, we combine a novel and innovative technique, electro optical terahertz pulse reflectometry (EOTPR) [1], with full 3D device-under-test (DUT) modelling to quickly and nondestructively perform feature-based analysis. We demonstrate fault isolation to an accuracy of 10 ìm or better with respect to device features in an advanced integrated circuit (IC) package.

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim
Keyword(s):  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Isolation Techniques ◽  
Super Conducting ◽  
Non Destructive

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

Time Domain Reflectometry Technique for Failure Analysis

2004 ◽  
Author(s):  
Teoh King Long ◽  
Ko Yin Fern
Keyword(s):  
Failure Analysis ◽  
Time Domain ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Reference Plane ◽  
First Case ◽  
Main Emphasis ◽  
Plastic Ball ◽  
Solder Balls ◽  
Non Destructive

Abstract In time domain reflectometry (TDR), the main emphasis lies on the reflected waveform. Poor probing contact is one of the common problems in getting an accurate waveform. TDR probe normalization is essential before measuring any TDR waveforms. The advantages of normalization include removal of test setup errors in the original test pulse and the establishment of a measurement reference plane. This article presents two case histories. The first case is about a Plastic Ball Grid Array package consisting of 352 solder balls where the open failure mode was encountered at various terminals after reliability assessment. In the second, a three-digit display LED suspected of an electrical short failure was analyzed using TDR as a fault isolation tool. TDR has been successfully used to perform non-destructive fault isolation in assisting the routine failure analysis of open and short failure. It is shown to be accurate and reduces the time needed to identify fault locations.

Super-Conducting Quantum Interference Device Technique: 3-D Localization of a Short within a Flip Chip Assembly

2001 ◽  
Author(s):  
Kendall Scott Wills ◽  
Omar Diaz de Leon ◽  
Kartik Ramanujachar ◽  
Charles P. Todd
Keyword(s):  
Form Factor ◽  
Failure Analysis ◽  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Interfacial Region ◽  
Precise Localization ◽  
Super Conducting ◽  
Accuracy Of Measurement

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.

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