Feature Based Nondestructive Fault Isolation in Advanced IC Packages

2014 ◽  
Author(s):  
K.C. Lee ◽  
J. Alton ◽  
M. Igarashi ◽  
S. Barbeau
Keyword(s):  
Time Domain ◽  
Integrated Circuit ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Device Under Test ◽  
Terahertz Pulse ◽  
Innovative Technique ◽  
Internal Structures ◽  
Feature Based ◽  
Ic Package

Abstract Traditional time domain reflectometry (TDR) techniques employ time-based information to locate faults within packages with minimal references to internal structures. Here, we combine a novel and innovative technique, electro optical terahertz pulse reflectometry (EOTPR) [1], with full 3D device-under-test (DUT) modelling to quickly and nondestructively perform feature-based analysis. We demonstrate fault isolation to an accuracy of 10 ìm or better with respect to device features in an advanced integrated circuit (IC) package.

Advanced Fault Isolation Technique Using Electro-Optical Terahertz Pulse Reflectometry (EOTPR) for 2D and 2.5D Flip-Chip Package

2012 ◽  
Author(s):  
Lihong Cao ◽  
Manasa Venkata ◽  
Meng Yeow Tay ◽  
Wen Qiu ◽  
J. Alton ◽  
...  
Keyword(s):  
Time Domain ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Experimental Results ◽  
Terahertz Pulse ◽  
Isolation And Identification ◽  
Isolation Technique ◽  
Non Destructive

Abstract Electro-optical terahertz pulse reflectometry (EOTPR) was introduced last year to isolate faults in advanced IC packages. The EOTPR system provides 10μm accuracy that can be used to non-destructively localize a package-level failure. In this paper, an EOTPR system is used for non-destructive fault isolation and identification for both 2D and 2.5D with TSV structure of flip-chip packages. The experimental results demonstrate higher accuracy of the EOTPR system in determining the distance to defect compared to the traditional time-domain reflectometry (TDR) systems.

Electro Optical Terahertz Pulse Reflectometry—A Fast and Highly Accurate Non-Destructive Fault Isolation Technique for 3D Flip Chip Packages

2013 ◽  
Author(s):  
Stephane Barbeau ◽  
Jesse Alton ◽  
Martin Igarashi
Keyword(s):  
Time Domain ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Terahertz Pulse ◽  
Through Silicon Via ◽  
Isolation Technique ◽  
Non Destructive ◽  
Non Destructive Techniques

Abstract Electro Optical Terahertz Pulse Reflectometry (EOTPR), a terahertz based Time Domain Reflectometry (TDR) technique, has been evaluated on Flip Chip (FC) and 3D packages. The reduced size and complexity of these new generations of advanced IC products necessitate non-destructive techniques with increased fault isolation accuracy. The minimum accuracy achievable with conventional TDR is approximately 1000μm. Here, we show that EOTPR is able to differentiate all of the critical features in a 3D FC package, such as μC4 and Through Silicon Via (TSV), and is capable of producing distance-to-defect accuracy of less than 20μm, a significant improvement over conventional microwave based TDR techniques.

Fast Feature Based Non-Destructive Fault Isolation in 3D IC Packages Utilizing Virtual Known Good Device

2015 ◽  
Author(s):  
K.C. Lee ◽  
J. Alton ◽  
M. Igarashi ◽  
S. Barbeau
Keyword(s):  
Three Dimensional ◽  
Fault Analysis ◽  
Fault Isolation ◽  
Device Under Test ◽  
Terahertz Pulse ◽  
3D Ic ◽  
Modeling Approach ◽  
Feature Based ◽  
Non Destructive

Abstract We combine Electro Optical Terahertz Pulse Reflectometry (EOTPR), with full three dimensional device-under-test (DUT) modeling utilizing virtual known good device to quickly and non-destructively isolate faults in advanced 3D IC packages. Computation power required for modeling can quickly become prohibitive with the design complexities of modern IC packages. In this study we adopt a piecemeal modeling approach that bypasses this exponential requirement. A PFA study verifies the accuracy of our model. This shows that feature-based fault analysis with a distance-to-defect accuracy of less than 10 μm can be readily attained through the combination of these techniques.

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim
Keyword(s):  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Isolation Techniques ◽  
Super Conducting ◽  
Non Destructive

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

Time Domain Reflectometry Technique for Failure Analysis

2004 ◽  
Author(s):  
Teoh King Long ◽  
Ko Yin Fern
Keyword(s):  
Failure Analysis ◽  
Time Domain ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Reference Plane ◽  
First Case ◽  
Main Emphasis ◽  
Plastic Ball ◽  
Solder Balls ◽  
Non Destructive

Abstract In time domain reflectometry (TDR), the main emphasis lies on the reflected waveform. Poor probing contact is one of the common problems in getting an accurate waveform. TDR probe normalization is essential before measuring any TDR waveforms. The advantages of normalization include removal of test setup errors in the original test pulse and the establishment of a measurement reference plane. This article presents two case histories. The first case is about a Plastic Ball Grid Array package consisting of 352 solder balls where the open failure mode was encountered at various terminals after reliability assessment. In the second, a three-digit display LED suspected of an electrical short failure was analyzed using TDR as a fault isolation tool. TDR has been successfully used to perform non-destructive fault isolation in assisting the routine failure analysis of open and short failure. It is shown to be accurate and reduces the time needed to identify fault locations.

Fault Isolation of High Resistance Defects Using Comparative Magnetic Field Imaging

2003 ◽  
Author(s):  
Antonio Orozco ◽  
Elena Talanova ◽  
Anders Gilbertson ◽  
L.A. Knauss ◽  
Zhiyong Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Resistance ◽  
Integrated Circuit ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Main Stream ◽  
Layer By Layer ◽  
Impedance Change ◽  
Resistance Change ◽  
Require Time

Abstract As integrated circuit packages become more complicated, the localization of defects becomes correspondingly more difficult. One particularly difficult class of defects to localize is high resistance (HR) defects. These defects include cracked traces, delaminated vias, C4 non-wet defects, PTH cracks, and any other package or interconnect structure that results in a signal line resistance change that exceeds the specification of the device. These defects can result in devices that do not run at full speed, are not reliable in the field, or simply do not work at all. The main approach for localizing these defects today is time domain reflectometry (TDR) [1]. TDR sends a short electrical pulse into the device and monitors the time to receive reflections. These reflections can correspond to shorts, opens, bends in a wire, normal interfaces between devices, or high resistance defects. Ultimately anything that produces an electrical impedance change will produce a TDR response. These signals are compared to a good part and require time consuming layer-by-layer deprocessing and comparison to a standard part. When complete, the localization is typically at best to within 200 microns. A new approach to isolating high resistance defects has been recently developed using current imaging. In recent years, current imaging through magnetic field detection has become a main-stream approach for short localization in the package [2] and is also heavily utilized for die level applications [3]. This core technology has been applied to the localization of high resistance defects. This paper will describe the approach, and give examples of test samples as well as results from actual yield failures.

Spread Spectrum Time Domain Reflectrometry Applied to Electrical Systems in Nuclear Power Plants

2010 ◽  
Author(s):  
Gary M. Sandquist ◽  
Carl J. Sandquist
Keyword(s):  
Time Domain ◽  
Integrated Circuit ◽  
Spread Spectrum ◽  
Power Plants ◽  
Short Circuit ◽  
Time Domain Reflectometry ◽  
Nuclear Plant ◽  
Current Time ◽  
Electrical Systems ◽  
On Line

A recently developed technique “Spread Spectrum Time Domain Reflectometry” (SSTDR), and supporting test devices will be adapted and tested to monitor and diagnose nuclear plant electrical systems. Current time domain reflectometry methods cannot detect or locate small faults after arc fault events, because their impedance discontinuity is too small and transient to create a measurable reflection. However, on-line, unobtrusive SSTDR can detect and locate arc and other electrical faults when the (∼msec) short circuit returns a strong reflected signal. These observations have led to development of SSTDR. If SSTDR can be successfully adapted to present and future nuclear plant electrical systems, it will be possible to monitor, on-line, the integrity of the electrical system continuously and with only minor equipment modification and no consequential safety issues. An integrated circuit (IC) is under development at the University of Utah for applications in the aircraft industry that will be adapted and used for this proposed development.

Compensation Scheme of a 50 Ω Bond Wire Interconnect Using Time Domain Reflectometry

2011 ◽  
Vol 8 (3) ◽  
pp. 114-120
Author(s):  
K. Webb ◽  
H. Song
Keyword(s):  
Time Domain ◽  
Integrated Circuit ◽  
Negative Impact ◽  
Time Domain Reflectometry ◽  
Physical Models ◽  
High Signal ◽  
Compensation Scheme ◽  
Bond Wires ◽  
The Time Domain ◽  
The Impact

A compensation scheme that reduces the impact of the excess reactance of bond wires is introduced. From the 3D finite element code and the time domain reflectometry (TDR), physical models were evaluated and the excess reactance of the signal path was determined to optimize the compensation structure. The presented method can be employed to reduce the negative impact caused by the excess reactances in bond wires for high signal integrity integrated circuit (IC) packaging applications.

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