scholarly journals Simulação e caracterização elétrica de dispositivos fotossensores implementados em tecnologia SOI

2020 ◽  
Author(s):  
◽  
Edson José Rodrigues
Keyword(s):  
Film Thickness ◽  
Quantum Efficiency ◽  
Linear Trend ◽  
Silicon Film ◽  
Physical Models ◽  
Light Sources ◽  
Light Emitting ◽  
Intrinsic Length ◽  
Pin Photodiodes ◽  
The Relationship

This work presents an analysis of the main performance characteristics of lateral PIN photodiodes implemented in thin layer SOI technology, when illuminated by wavelengths, in the range between blue and ultraviolet (UV), and subjected to temperature variations. Twodimensional numerical simulations were performed to analyze characteristics such as photocurrent, absorption, quantum efficiency, and responsivity. In this analysis, the influence of the variation between 40 nm and 500 nm of the silicon film thickness (tSi) and the intrinsic length region (Li) between 5 and 30 ?m was considered to evaluate the performance of the photodiode at different wavelengths, in the range blue and ultraviolet (UV). Different sets of physical models were studied in the simulations, to reproduce trends reported in the literature. Through experimental measurements of the intensities of incident powers as a function of distance, light sources were characterized using light-emitting diodes at wavelengths, UV (390 nm), violet (410 nm), and Blue (460 nm), adapted for providing light energy in the photosensitive region of experimental photodiodes also characterized for temperatures between 100 K and 400 K. The simulations show that there is a dependency relationship between the silicon film thickness and the intrinsic length region (Li), that when evaluated and scaled simultaneously it is possible to optimize the quantum efficiency and responsivity of the PIN SOI photodiodes in the definition technology for specific wavelength applications. The results show that the quantum efficiency around 28 % and responsiveness around 85 mA / W for a given technology showed the same trend as the experimental results, taking into account the wavelength and temperature range. The results also show an almost linear trend in the relationship between silicon film thickness (tSi) and absorption (light penetration depth), so that, in thinner silicon film thickness, the device will be more selective for low wavelengths, that is, closer to UV

Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation

2015 ◽  
Vol 66 (5) ◽  
pp. 101-107 ◽  
Author(s):  
C. Novo ◽  
J. Baptista ◽  
M. Guazzeli da Silveira ◽  
R. Giacomini ◽  
A. Afzalian ◽  
...  
Keyword(s):  
Temperature Variation ◽  
Quantum Efficiency ◽  
Gate Bias ◽  
Back Gate ◽  
Intrinsic Length ◽  
Pin Photodiodes

scholarly journals Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths

2011 ◽  
Vol 6 (2) ◽  
pp. 107-113
Author(s):  
Michelly De Souza ◽  
Olivier Bulteel ◽  
Denis Flandre ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Numerical Simulations ◽  
Silicon Film ◽  
Ultra Violet ◽  
Experimental Measurements ◽  
Two Dimensional ◽  
Temperature Influence ◽  
Pin Photodiodes ◽  
Physical Phenomena

This work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior as a function of the temperature as well as to predict the influence of silicon film thickness downscaling on the photodetector performance.

scholarly journals Temperature, Silicon Thickness and Intrinsic Length Influence on the Operation of Lateral SOI PIN Photodiodes

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
Edson José Rodrigues ◽  
Michelly De Souza
Keyword(s):  
Thin Film ◽  
Numerical Simulations ◽  
Silicon Film ◽  
Experimental Measurements ◽  
Two Dimensional ◽  
Incident Wavelength ◽  
Intrinsic Length ◽  
Silicon Thickness ◽  
Pin Photodiodes ◽  
Uv Range

This work presents an analysis of the influence of the intrinsic length region (Li) and the thickness of the silicon film (tSi) on the performance of lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the blue and ultraviolet (UV) range. The experimental measurements performed with the wavelengths of 396 nm, 413 nm, and 460 nm in a temperature range of 100 K to 400 K showed that the optical responsivity of the SOI PIN photodetectors has larger dependence on the incident wavelength than on temperatures variation. Two-dimensional numerical simulations showed the same trends as the experimental results as a function of temperature and as a function of wavelength. Numerical simulations were used to investigate the responsivity and total quantum efficiency of PIN SOI photodetectors with intrinsic length region ranging from 5 µm to 30 µm and silicon film thickness ranging between 40 nm to 500 nm. From the results can be concluded that by properly choosing Li and tSi it is possible to optimize PIN SOI photodiodes performance for detecting specific wavelengths.

Organic Light Emitting Diodes - Innovative Light Sources

2019 ◽  
pp. 101-107
Author(s):  
Sergei A. Stakharny
Keyword(s):  
Light Source ◽  
Organic Light Emitting Diodes ◽  
Organic Leds ◽  
Light Sources ◽  
High Quality ◽  
Light Emitting ◽  
Organic Light ◽  
Lighting Systems ◽  
Physical Principles ◽  
Prospects Of Application

This article is a review of the new light source – organic LEDs having prospects of application in general and special lighting systems. The article describes physical principles of operation of organic LEDs, their advantages and principal differences from conventional non-organic LEDs and other light sources. Also the article devoted to contemporary achievements and prospects of development of this field in the spheres of both general and museum lighting as well as other spheres where properties of organic LEDs as high-quality light sources may be extremely useful.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Identifying Physico-Chemical Laws from the Robotically Collected Data

2019 ◽  
Author(s):  
Liwei Cao ◽  
Danilo Russo ◽  
Vassilios S. Vassiliadis ◽  
Alexei Lapkin
Keyword(s):  
Experimental Data ◽  
Numerical Models ◽  
Predictor Variable ◽  
Physical Models ◽  
Training Data ◽  
Mixed Integer ◽  
Physico Chemical ◽  
Data Points ◽  
Future Work ◽  
The Relationship

<p>A mixed-integer nonlinear programming (MINLP) formulation for symbolic regression was proposed to identify physical models from noisy experimental data. The formulation was tested using numerical models and was found to be more efficient than the previous literature example with respect to the number of predictor variables and training data points. The globally optimal search was extended to identify physical models and to cope with noise in the experimental data predictor variable. The methodology was coupled with the collection of experimental data in an automated fashion, and was proven to be successful in identifying the correct physical models describing the relationship between the shear stress and shear rate for both Newtonian and non-Newtonian fluids, and simple kinetic laws of reactions. Future work will focus on addressing the limitations of the formulation presented in this work, by extending it to be able to address larger complex physical models.</p><p><br></p>

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