Photo-Deposition of Ag Metal Particles on Ni-Doped TiO2 for Photocatalytic Application

2017 ◽  
Vol 42 (3) ◽  
pp. 244-250 ◽  
Author(s):  
Mohammad Reza Elahifard ◽  
Reza Vatan Meidanshahi
Keyword(s):  
Photocatalytic Activity ◽  
Band Gap ◽  
Metal Particles ◽  
Electron Hole ◽  
Photocatalytic Application ◽  
Negative Effect ◽  
Direct Band ◽  
Indirect Band Gap ◽  
Co Precipitation ◽  
Acid Blue

Ni-doped TiO2 and Ag-deposited@Ni-doped TiO2 photocatalysts were prepared using the co-precipitation technique and characterised using X-ray powder diffraction, scanning electron microscopy and Brunauer–Emmett-Teller analysis. Our results confirmed the presence of Ni atoms in the TiO2 bulk structure and Ag° metal particles deposited on the surface. The Ni impurity generates defect midgap states in the TiO2 band structure, providing visible light (VL) absorption, which are responsible for photocatalytic activity under VL conditions. Against this advantage, Ni changes the indirect band gap of pure anatase to the direct band gap which may dramatically suppress the photocatalytic activity of Ni-doped TiO2. Moreover, Ni may provide a centre of electron–hole (e–h) recombination which enhances the negative effect of Ni impurity on TiO2 photo-efficiency. These drawbacks were overcome by deposition of Ag° on the Ni-doped TiO2 which sinks the photo-excited electrons, quenching e–h recombination. This improvement yields three times more photo-efficiency in the decolourisation of Acid Blue 92. Although Ag@Ni-doped anatase shows a higher adsorption constant ( Kads) than Ag@Ni-doped rutile, both catalysts surprisingly present the same rate constant ( k).

scholarly journals Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 988
Author(s):  
Chrysa Aivalioti ◽  
Alexandros Papadakis ◽  
Emmanouil Manidakis ◽  
Maria Kayambaki ◽  
Maria Androulidaki ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Phase ◽  
Structural Disorder ◽  
Energy Band Gap ◽  
Nitrogen Doped ◽  
Nio Thin Film ◽  
Direct Band ◽  
Output Characteristics ◽  
Indirect Band Gap ◽  
P Type

Nickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Enhanced visible-active photocatalytic behaviors observed in Mn-doped BiFeO3

2018 ◽  
Vol 32 (17) ◽  
pp. 1850185 ◽  
Author(s):  
Yun-Hui Si ◽  
Yu Xia ◽  
Ya-Yun Li ◽  
Shao-Ke Shang ◽  
Xin-Bo Xiong ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Band Gap ◽  
Diffuse Reflectance Spectroscopy ◽  
X Ray Diffraction ◽  
Electron Hole ◽  
X Ray ◽  
Mn Doped ◽  
Hole Recombination ◽  
Narrow Band Gap Semiconductors

A series of BiFeO3 and BiFe[Formula: see text]Mn[Formula: see text]O3 (x = 0, 0.02, 0.04, 0.06, 0.08, 0.10) were synthesized by a hydrothermal method. The samples were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy (EDS) and UV–Vis diffuse reflectance spectroscopy, and their photocatalytic activity was studied by photocatalytic degradation of methylene blue in aqueous solution under visible light irradiation. The band gap of BiFeO3 was significantly decreased from 2.26 eV to 1.90 eV with the doping of Mn. Furthermore, the 6% Mn-doped BiFeO3 photocatalyst exhibited the best activity with a degradation rate of 94% after irradiation for 100 min. The enhanced photocatalytic activity with Mn doping could be attributed to the enhanced optical absorption, increment of surface reactive sites and reduction of electron–hole recombination. Our results may be conducive to design more efficient photocatalysts responsive to visible light among narrow band gap semiconductors.

The Effect of Chromium on the Optical Properties and Photoactivity of Nano-Particulate Rutile

2012 ◽  
Vol 554-556 ◽  
pp. 502-506 ◽  
Author(s):  
Li Wei Wang ◽  
Terry A. Egerton
Keyword(s):  
Optical Properties ◽  
Photocatalytic Activity ◽  
Reflectance Spectroscopy ◽  
Electron Trapping ◽  
Electron Hole ◽  
High Chromium ◽  
Chromium Doping ◽  
Chromium Addition ◽  
Co Precipitation ◽  
Hole Recombination

Chromium doped rutile TiO2was synthesized by either co-precipitation or impregnation (surface-doping) and characterized by XRD and reflectance spectroscopy. Chromium addition did not change the TiO2structure nor did the structure of the co-precipitated products differ from that of the impregnated samples. However, chromium doping moved the absorption of both sets of products into the visible and significantly affected the TiO2photocatalytic activity for isopropanol (IPA) oxidation. At high chromium concentrations the photoactivity of the co-precipitated samples was reduced by a larger amount than that of the impregnated samples; this was attributed to a higher concentration of Cr3+ions in the rutile lattice. Unexpectedly, increased photoactivity was measured for low Cr levels of surface-doped rutile. This may be caused by increased electron-trapping, at surface Cr6+ions, and correspondingly reduced, electron-hole recombination.

scholarly journals Biaxial strain modulated the electronic structure of hydrogenated 2D tetragonal silicene

RSC Advances ◽  
2019 ◽  
Vol 9 (72) ◽  
pp. 42245-42251
Author(s):  
Haoran Tu ◽  
Jing Zhang ◽  
Zexuan Guo ◽  
Chunyan Xu
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Biaxial Strain ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap

Hydrogenation can open the band gap of 2D tetragonal silicene, α-SiH is semiconductors with a direct band gap of 2.436 eV whereas β-SiH is indirect band gap of 2.286 eV. The band gap of α-SiH, β-SiH and γ-SiH can be modulated via biaxial strain.

LASER-INDUCED MULTIPHOTON PHOTOCONDUCTIVITY IN DIRECT AND INDIRECT BAND GAP CRYSTALS USING Z-SCAN TECHNIQUE

2009 ◽  
Vol 23 (23) ◽  
pp. 2783-2789 ◽  
Author(s):  
ARUN GAUR ◽  
D. K. SHARMA ◽  
K. S. SINGH ◽  
NAGESHWAR SINGH
Keyword(s):  
Absorption Coefficient ◽  
Band Gap ◽  
Laser Pulses ◽  
Beam Waist ◽  
Photon Absorption ◽  
Nanosecond Laser ◽  
Direct Band Gap ◽  
Direct Band ◽  
Nanosecond Laser Pulses ◽  
Indirect Band Gap

Nanosecond laser pulses have employed the photoconductive Z-scan technique. Photoconductivity traces measured by moving the sample across the laser beam waist were used for measuring two and three-photon absorption processes. The value of the three-photon absorption coefficient β3=9.6×10-10 cm 3/ GW 2 in the case of direct, and 8.96×10-12 cm 3/ GW 2 and 5.0×10-12 cm 3/ GW 2 in the case of indirect band gap crystals have been estimated from a comparison of traces measured by exciting the sample with the first and second harmonics of Nd : YAG laser. The low value of β3 in the case of indirect band gap crystals compared to direct band gap crystals is attributed to phonon-assisted transitions.

Dynamic charge transfer through Fermi level equilibration in the p-CuFe2O4/n-NiAl LDH interface towards photocatalytic application

2020 ◽  
Vol 10 (18) ◽  
pp. 6285-6298 ◽  
Author(s):  
Snehaprava Das ◽  
Sulagna Patnaik ◽  
Kulamani Parida
Keyword(s):  
Photocatalytic Activity ◽  
Charge Transfer ◽  
Energy Level ◽  
Fermi Level ◽  
Vacuum Energy ◽  
Electron Hole ◽  
Photocatalytic Application ◽  
Dynamic Charge ◽  
Hole Recombination

The Ni Al LDH–CuFe2O4 p–n heterojunction, through vacuum energy level bending, inhibits electron hole recombination and enhances photocatalytic activity.

SHIFT OF BAND GAP FROM DIRECT TO INDIRECT AND OPTICAL RESPONSE OF LiF UNDER PRESSURE

2013 ◽  
Vol 27 (09) ◽  
pp. 1350061 ◽  
Author(s):  
A. SAJID ◽  
G. MURTAZA ◽  
A. H. RESHAK
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Lithium Fluoride ◽  
Pressure Range ◽  
Pressure Effect ◽  
Indirect Transition ◽  
Direct Band Gap ◽  
Direct Band ◽  
Indirect Band Gap

We hereby are reporting the transition pressure at which lithium fluoride ( LiF ) compound transforms from direct band gap to indirect band gap insulator on the basis of FP-LAPW calculations. The fundamental band gap of LiF compound suffers direct to indirect transition at a pressure of 70 GPa. The study of the pressure effect on the optical properties e.g. dielectric function, reflectivity, refractive index and optical conductivity of LiF in the pressure between 0–100 GPa, shows that this pressure range is very critical for LiF compound as there are significant changes in the optical properties of this compound.

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