scholarly journals Resistance switching behavior of ZnO thin films for random access memory applications

2013 ◽  
Vol 16 (1) ◽  
pp. 81-85
Author(s):  
Trung Do Nguyen ◽  
Van Thuy Dao ◽  
Kim Ngoc Pham ◽  
Thi Kieu Hanh Ta ◽  
Tran Le ◽  
...  
Keyword(s):  
Data Storage ◽  
Glass Structure ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Access Memory ◽  
Switching Mode ◽  
Memory Applications ◽  
Dc Sputtering Technique

We investigated resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V – 0.6 V). Our results figured out that the Ag/ZnO/Ti/Glass structure is a candidate structure for nonvolatile data storage applications.

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

2016 ◽  
Vol 119 (24) ◽  
pp. 244506 ◽  
Author(s):  
Chun-Cheng Lin ◽  
Jian-Fu Tang ◽  
Hsiu-Hsien Su ◽  
Cheng-Shong Hong ◽  
Chih-Yu Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Resistance Random Access Memory ◽  
Doped Zno

Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

2013 ◽  
Vol 52 (3R) ◽  
pp. 031801 ◽  
Author(s):  
Kuan-Liang Lin ◽  
Tuo-Hung Hou ◽  
Yao-Jen Lee ◽  
Jhe-Wei Chang ◽  
Jun-Hung Lin ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Binary Oxide ◽  
Access Memory ◽  
Switching Mode
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