scholarly journals Studying and fabricating p - type transparent conducting antimony - doped SnO2 thin films by magnetron sputtering

2015 ◽  
Vol 18 (1) ◽  
pp. 23-33
Author(s):  
Phuc Huu Dang ◽  
Duan Van Nguyen ◽  
Vu Si Hoai Nguyen ◽  
Hieu Van Le ◽  
Tran Le
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
The Other ◽  
Working Pressure ◽  
Rutile Structure ◽  
Different Temperatures ◽  
Ambient Gas ◽  
Optimum Annealing Temperature ◽  
P Type ◽  
Deposited Films

Sb doped tin oxide films (ATO) were fabricated on Quart glasses from (SnO2 + Sb2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar ambient gas at working pressure of 2.10-3 torr. X ray diffraction (XRD), Hall - effect measurements and UV-vis spectra were performed to characterize the deposited films. The substrate temperature of films was investigated for two ways. Films were annealed in Ar ambient gas after deposited at room temperature in one way. They were deposited directly with different temperatures in the other. It is found that the fabricated of ATO films in the first way was easier than the other. Deposited films showed p type electrical property, polycrystalline tetragonal rutile structure and their average transmittance was above 80 % in visible light range at the optimum annealing temperature of 500oC. The best electrical properties of film were obtained on 10 %wt Sb2O3 doped SnO2 target with its resistivity, hole concentration and Hall mobility are 0.55 Ω.cm, 1.2.1019 cm-3 and 0.54 cm2V-1s-1, respectively.

scholarly journals Fabricating and investigating the influence of the temperature on electrical and optical properties of the p-type SnO2:Ga (GTO) thin films prepared by DC magnetron sputtering

2016 ◽  
Vol 19 (4) ◽  
pp. 137-146
Author(s):  
Phuc Huu Dang ◽  
Nhan Van Pham ◽  
Hieu Van Le ◽  
Tran Le
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
Ar Gas ◽  
Optimum Annealing Temperature ◽  
Quartz Glasses ◽  
P Type ◽  
Deposited Films

Transparent Ga-doped tin oxide (GTO) thin films were fabricated on quartz glasses from (SnO2 + Ga2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar gas at the pressure of 4.10-3torr. X ray diffraction (XRD), Hall - effect and UV-vis spectra measurements were performed to characterize the deposited films. Films were deposited directly with different temperatures in order to investigate the influence of temperature on their electrical and optical propertises. After that GTO films were deposited at 400 oC and then were annealed in Ar gas at different temperature in order to eliminate acceptor and donor compensation. Deposited films showed p-type electrical property, polycrystalline tetragonal rutile structure and their average transmittance above 80 % in visible light range at the optimum annealing temperature of 550 oC. In addition, p-type conductivity was also confirm by the non-linear characteristics of a p-type GTO/n Si. The best electrical properties of film were obtained on 15 % wt Ga2O3-doped SnO2 target with its resistivity, hole concentration and Hall mobility were 0,63 .cm, 3,3.1018 cm-3 and 3,01 cm2V-1s-1, respectively.

scholarly journals The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
Huu Phuc Dang ◽  
Quang Ho Luc ◽  
Tran Le ◽  
Van Hieu Le
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Hole Concentration ◽  
Dc Magnetron Sputtering ◽  
Rutile Structure ◽  
X Ray ◽  
P Type ◽  
Deposited Films

Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.

scholarly journals Investigation of spray pyrolyzed cubic structured Cu doped SnS films

2021 ◽  
Author(s):  
Emrah SARICA
Keyword(s):  
Spray Pyrolysis Technique ◽  
Hole Concentration ◽  
Compressive Strain ◽  
Cubic Phase ◽  
Cu Doping ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Hall Effect Measurements ◽  
P Type ◽  
Deposited Films

Abstract In this work undoped and Cu doped SnS film at 4% and 8% were deposited onto glass substrates by spray pyrolysis technique in order to investigate the effect of Cu doping on their physical properties. Surface investigations showed that Cu doping reduced the surface roughness of SnS films from 36.5 nm to 8.8 nm. XRD studies revealed that all films have recently solved large cubic phase of SnS (p-SnS) with a- lattice of 11.53 Å and Cu doping led to reduction in crystallite size from 229 Å to 198 Å. Additionally, all deposited films were found to be under compressive strain. Optical band gaps of SnS:Cu varied in the range of 1.83 eV-1.90 eV. Hall-effect measurements exhibited that all film have p-type conductivity with low hole concentration (~10 11 -10 12 cm -3 ) and high electrical resistivity (~10 4 -10 5 Ωcm).

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

2012 ◽  
Vol 503-504 ◽  
pp. 350-353
Author(s):  
Mao Nan ◽  
Chun Yang Kong ◽  
Guo Ping Qin ◽  
Hai Bo Ruan
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Powder Target ◽  
Post Annealing ◽  
P Type

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

Nitrogen – Doped SnO2 Thin Films Prepared by Direct Current Magnetron Sputtering

2013 ◽  
Vol 770 ◽  
pp. 169-172 ◽  
Author(s):  
Prayoon Suapadkorn ◽  
Worawarong Rakreungdet ◽  
Tula Jutarosaga ◽  
Wattana Samanjit
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Flow Rate ◽  
Hole Concentration ◽  
Visible Range ◽  
Intrinsic Defect ◽  
Average Crystalline Size ◽  
Working Pressure ◽  
Nitrogen Doped

Nitrogen - doped tin oxide (N-doped SnO2) thin films were prepared on unheated glass substrate by dc magnetron sputtering of a Sn target in gas mixtures of O2 and N2. The N2 flow rates were varied from 0 to 15 SCCM with the same working pressure of 1×10-2 Torr. The as-deposited films were annealed in vacuum at 400 °C for 1 h. The films structure, electrical properties and optical properties were characterized by X-ray diffraction (XRD), 4-point probe and Hall effect measurement and portable fiber optic UV-vis spectrometer, respectively. The observed XRD patterns of films showed preferred (101) orientation of the SnO2 tetragonal structure. The average crystalline size of the (101) diffraction peak decreased from 5.10 to 4.07 nm with N2 flow rate increased. Hall measurement indicated that resistivity increased and carrier concentrations decreased as N2 flow rate increased. The carrier concentrations decreased because N atoms substituted oxygen atom in SnO2 lattice. The N atoms may forms acceptor level in SnO2 band gap resulting in hole generation. The electron concentration from intrinsic defect were neutralized with the hole concentration. The carrier concentration decreased from 3.42×1017 cm-3 for un-doped SnO2 to the order of 1014 cm-3. The average percent transmittance of un-doped SnO2 of about 77.5% in visible range (400-700 nm) decreased to 60% with increasing N2 flow rate. The optical band gap decreased from 3.64 eV for un-doped SnO2 to 3.45 eV for N-doped SnO2 films.

Selective Area Etching of GaN and AlGaN by Thermally Chemical Reaction in Hydrogen Ambient

1997 ◽  
Vol 482 ◽  
Author(s):  
K. Hiramatsu ◽  
H. Matsushima ◽  
H. Hanai ◽  
N. Sawaki
Keyword(s):  
Chemical Reaction ◽  
Annealing Temperature ◽  
Etching Rate ◽  
The Other ◽  
Surface Etching ◽  
Selective Area ◽  
Other Hand ◽  
Different Temperatures ◽  
Ambient Gases ◽  
Ambient Gas

AbstractThe selective area etching of wurtzite GaN (0001) and AlGaN (0001) with SiO2 masks is investigated for different temperatures of 800 to 1 100°C and different ambient gases of H2, N2 and Ar including NH3. The etching rate of GaN increases with increasing annealing temperature under H2 ambient. This etching is attributed to the chemical reaction between Ga-N and H2. On the other hand, the etching of GaN does not occur in the N2 or Ar ambient gas. The NH3 gas in H2 ambient suppresses the chemical reaction, while the NH3 gas in N2 enhances it. The surface etching of Al0.1Ga0.9N is not observed even in H2 ambient.

Influence of Deposition Parameters on Surface Texturing of ZnO:Al Films Prepared by In-line RF Magnetron Sputtering

2009 ◽  
Vol 1210 ◽  
Author(s):  
Jun-Sik Cho ◽  
Young-Jin Kim ◽  
Jeong Chul Lee ◽  
Sang-Hyun Park ◽  
Kyung Hoon Yoon
Keyword(s):  
Magnetron Sputtering ◽  
Scattered Light ◽  
Incident Light ◽  
Rf Magnetron Sputtering ◽  
Wet Etching ◽  
Visible Range ◽  
Silicon Thin Film ◽  
Working Pressure ◽  
Deposition Parameters ◽  
Deposited Films

AbstractA systematic study on the effect of sputtering deposition parameters on material properties of Al doped ZnO (ZnO:Al) films prepared by an in-line rf magnetron sputtering and on surface morphology of the films after wet etching process was carried out. For application to silicon thin film solar cells as a front electrode, the as-deposited films were surface-textured by a dilute HCl solution to improve the light scattering properties such as haze and angle resolved distribution of scattered light on the film surfaces. The microstructure of as-deposited films is affected significantly by the working pressure and film compactness decreases with increasing working pressure from 1.5 mTorr to 10 mTorr. High quality ZnO:Al films with electrical resistivity of 4.25 × 10-4 Ω cm and optical transmittance of 80% in a visible range are obtained at low working pressure of 1.5 mTorr and substrate temperature of 100℃. Crater-like surface morphologies are observed on the textured ZnO:Al films after wet etching. The size and shape of craters are closely dependent on the microstructure and film compactness of as-deposited films. Haze values of the textured ZnO:Al films are improved in a whole wavelength of 300 – 1100 nm compared to commercial SnO2:F films (Asahi U type) and incident light on the textured films is scattered effectively with 30° angle.

Influence of Process Parameters on the Properties of TiO2 Films Deposited by a D.C. Magnetron Sputtering System on Glass Support

2015 ◽  
Vol 660 ◽  
pp. 86-92 ◽  
Author(s):  
Stefan Lucian Toma ◽  
Costica Bejinariu ◽  
Eva Lucian ◽  
Ioan Gabriel Sandu ◽  
Bogdan Florin Toma
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Sem Analysis ◽  
Technological Parameters ◽  
Average Roughness ◽  
Working Pressure ◽  
Influence Of Process Parameters ◽  
Deposited Films ◽  
Sputtering System

In this paper it has been deposited films of titanium oxide (TiO2), on a support of glass, by a D.C. magnetron sputtering system, by varying the working pressure (p = 2∙10-3 - 6.5∙10-3mbar) of the substrate temperature on three levels. The obtained layers were investigated and characterized by optical microscopy, Scanning Electron Microscopy SEM, X-ray diffraction and Atomic Force Microscopy. It was observed that, by modifying technological parameters of the process (working pressure and substrate temperature) it is changing the initial orientation of the compounds ((100) turns into (101) or (002)). The AFM analysis has allowed the observation of the fact that the average roughness of deposited films, expressed as RMS, has increased over 98% at the increasing of sputtering pressure from 2 10-3mbar to 6.5 10-3mbar. SEM analysis showed that the density of the deposit increases with substrate temperature. The granulation of the films obtained, presents an increasing trend with the variation of process parameters.

Study on Preparation and Application Performance of P-Type Conducting SnO2 Ceramic Target

2014 ◽  
Vol 599 ◽  
pp. 338-345 ◽  
Author(s):  
Jia Miao Ni ◽  
Xiu Jian Zhao ◽  
Bin Bin Li ◽  
Min Dong Zheng ◽  
Ting Peng
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hole Concentration ◽  
High Conductivity ◽  
Raw Material ◽  
Molding Pressure ◽  
High Quality ◽  
Rutile Structure ◽  
X Ray ◽  
And Performance ◽  
P Type

To obtain high quality SnO2 film, high conductivity and high quality SnO2 target should be obtained first. In this paper, high-conductivity Sb: SnO2 (ATO) ceramic targets were fabricated using SnO2, Sb2O3 powder as raw material. The chemical composition and morphology of SnO2 targets were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The effect of different forming pressure on the morphology and electrical properties of targets were studied in our paper. The results show that molding pressure has a significant impact on the density of ATO targets and performance during sintering process. When molding pressure is 15 Mpa, the target has the minimum resistivity for 2.38 Ωcm. XRD results show that ATO target possess tetragonal rutile structure with the preferred orientation of (101). XPS indicate that the chemical state of Sn element in the target is Sn4+ and that of Sb is Sb3+. In addition, the shrinkage rate of conductive SnO2 target is 10.34% so that target can be used to sputtering in the magnetron sputter. The preparation process is simple and cost of SnO2 target is low. The transparent conductive SnO2 thin film was successfully deposited on glass substrate with good performance of high hole concentration and low resistivity of 3.334×1019 cm-3 and 3.588 Ω·cm, respectively. The average transmission of p-type SnO2 films was above 80% in the visible light range.

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