scholarly journals Structural and Electrical Transport Properties of CdS and Al-doped CdS Thin Films Deposited by Spray Pyrolysis

2011 ◽  
Vol 4 (1) ◽  
pp. 11 ◽  
Author(s):  
A. H. Rubel ◽  
J. Podder
Keyword(s):  
Thin Films ◽  
Cadmium Sulfide ◽  
Spray Pyrolysis ◽  
Electrical Transport ◽  
Electrical Measurement ◽  
Hexagonal Structure ◽  
Electrical Transport Properties ◽  
X Ray ◽  
Cds Thin Films ◽  
Cds Film

Cadmium sulfide (CdS) and aluminum (Al) doped cadmium sulfide (Cd1-xAlxS) thin films have been deposited on glass substrate at 300 ºC by spray pyrolysis. The structural and electrical properties of the as-deposited films have been characterized using Energy Dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and D.C. electrical measurement. The effect of Al on the surface morphology of CdS film was studied by Scanning Electron microscopy (SEM). EDX shows that the deposited samples are stoichiometric. The peak intensities observed in the XRD patterns were found consistent to a polycrystalline hexagonal structure. The XRD study shows that the hexagonal structure of CdS is not much affected with respect to Al doping.  Al-doped CdS thin films show low electrical resistivity of about 48 Ω cm and high carrier density of about 1.1×1019 cm-3.Keywords: Spray pyrolysis; CdS, Cd1-xAlxS; Thin films; EDX; XRD; Hall mobility.© 2012 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.doi: http://dx.doi.org/10.3329/jsr.v4i1.8548J. Sci. Res. 4 (1), 11-19  (2012) 

Equation of state and electrical transport properties of mixture of Li1.2Mn0.54Co0.13Ni0.13O2 and LiNi0.87Co0.09Mn0.03Al0.01O2 at high pressure

2021 ◽  
pp. 2150227
Author(s):  
Lun Xiong ◽  
Pu Tu ◽  
Yongqing Hu ◽  
Xiang Hou ◽  
Shiyun Wu ◽  
...  
Keyword(s):  
High Pressure ◽  
Equation Of State ◽  
Electrical Transport ◽  
Room Temperature ◽  
Diamond Anvil Cell ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Electrical Transport Properties ◽  
X Ray ◽  
Diamond Anvil

The equation of state (EOS) of mixture of Li[Formula: see text]Mn[Formula: see text]Co[Formula: see text]Ni[Formula: see text]O2 and LiNi[Formula: see text] Co[Formula: see text]Mn[Formula: see text]Al[Formula: see text]O2 was studied by synchrotron radiation X-ray diffraction (XRD) at room-temperature in a diamond anvil cell (DAC). The results showed that the hexagonal structure is maintained to the highest pressure of 23.1 GPa. The bulk modulus and its first derivative obtained from XRD data are [Formula: see text] GPa and [Formula: see text], respectively. In addition, we have investigated the high-pressure electrical conductivity of the mixture of Li[Formula: see text]Mn[Formula: see text]Co[Formula: see text]Ni[Formula: see text]O2 and LiNi[Formula: see text]Co[Formula: see text]Mn[Formula: see text]Al[Formula: see text]O2 to 22.9 GPa in a DAC. It is found that the resistance decreases with the increase of pressure and changes exponentially.

AN INVESTIGATION ON IMPURITY AND GRAIN BOUNDARY EFFECTS ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF SnO2:F THIN FILMS DEPOSITED BY SPRAY PYROLYSIS

2011 ◽  
Vol 25 (17) ◽  
pp. 1473-1485 ◽  
Author(s):  
HOSEIN ESHGHI ◽  
ALIREZA BIARAM ◽  
MEHDI ADELIFARD
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Spray Pyrolysis ◽  
Electrical Transport ◽  
Spray Pyrolysis Technique ◽  
Band Gap Energy ◽  
Optical And Electrical Properties ◽  
Electrical Transport Properties ◽  
Preferred Direction

We have investigated the effect of fluorine dopant concentration (0–15 F / Sn wt.%) on structural, optical and electrical properties of SnO 2 thin films grown by spray pyrolysis technique. According to the experimental evidences and data analysis, we found in these samples: (1) the polycrystalline layers, while in undoped conditions it mainly grow along (211) direction in doped ones (200) is the preferred direction with a direct band gap energy of about 3.7–3.9 eV; (2) The main cause for the relatively high absorption coefficients below Eg could be due to the presence of wide (~ 1–2 eV) band tails in the forbidden gap; (3) the highest (5.4 × 10-3 Ω-1) figure of merit belongs to the sample with 5 wt.% F / Sn concentration; (4) the grain boundary scattering is the main limiting mechanism in the electrical transport properties of the layers.

scholarly journals Study the effect by CO2 laser on some optical properties of (Cd) thin film doping by Ni

2008 ◽  
Vol 5 (3) ◽  
pp. 387-390
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Co2 Laser ◽  
Energy Gap ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Before And After ◽  
Cds Thin Films

In this research study the effect of irradiation by (CW) CO2 laser on some optical properties of (Cds) doping by Ni thin films of (1)µm thickness has been prepared by heat evaporation method. (X-Ray) diffraction technique showed the prepared films before and after irradiation are ploy crystalline hexagonal structure, optical properties were include recording of absorbance spectra for prepared films in the range of (400-1000) nm wave lengths, the absorption coefficient and the energy gap were calculated before and after irradiation, finally the irradiation affected (CdS) thin films by changing its color from the Transparent yellow to dark rough yellow and decrease the value absorption coefficient also increase the value of energy gap.

scholarly journals Copper Incorporation into CdS Thin Films by Ionic Exchange in an Aqueous Solution Process at Room Temperature

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
E. Flores-García ◽  
M. A. Hernández-Landaverde ◽  
P. González-García ◽  
R. Ramírez-Bon
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Solution Process ◽  
Deposition Process ◽  
Hexagonal Structure ◽  
Ionic Exchange ◽  
X Ray ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films were deposited, on glass substrates, at 70°C for 120 min using an ammonium-free chemical bath deposition process. After deposition, the films were placed in a CuCl2 solution for 45, 60, 75, and 90 min, respectively, for their ion exchange, generating CdxCu1-xS films. The obtained films were analyzed by X-ray diffraction, Raman spectroscopy, X-ray wavelength dispersion spectrometry, and scanning electron microscopy. The reference CdS films showed a homogeneous appearance and a yellowish color; elapsing the immersion time, the films changed their color showing a greenish appearance. The X-ray analysis indicated that the CdS films developed a hexagonal structure with preferential orientation along the plane (002). During the ion exchange, a decrease in the intensity of the reflection (002) was observed as well as a slight displacement of this reflection towards higher values of 2θ derived from the substitution of Cd atoms by Cu atoms. The WDS analysis revealed that approximately 10% of the cadmium atoms were replaced by copper ones after 90 min of immersion.

Magnetically Soft Co-C Granular-like Amorphous Thin Films With High Resistivity and High Saturation Flux Density

2002 ◽  
Vol 721 ◽  
Author(s):  
H. Wang ◽  
S.P. Wong ◽  
M.F. Chiah ◽  
W.Q. Li ◽  
C.Y. Poon ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Electrical Transport ◽  
Quantum Interference ◽  
Rutherford Backscattering Spectrometry ◽  
Magnetic Hysteresis ◽  
High Resistivity ◽  
Vacuum Furnace ◽  
Electrical Transport Properties ◽  
X Ray

AbstractGranular-like amorphous CoxC1-x nanocomposite thin films, with x in the range of 60-75% in atomic percentage, have been prepared by pulsed filtered vacuum arc deposition. The structures of the films were characterized by non-Rutherford backscattering spectrometry, transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and Raman spectroscopy. The in-plane magnetic hysteresis loops were measured by a superconducting quantum interference device magnetometer at room temperature. The electrical transport properties were measured by the four-probe technique at various temperatures ranging from 20 to 300 K. The films were found to be magnetically soft with coercivities in the range of 2 to 12 Oe, resistivities in the range of 130 to 300 μΩcm, and magnetic saturation flux densities in the range of 6 to 13 kG. The films also showed good thermal stability in their structural, electrical and magnetic properties upon annealing up to 200°C in a vacuum furnace.

EFFECTS OF BUFFER SALT CONCENTRATION ON THE DOMINATED DEPOSITION MECHANISM AND OPTICAL CHARACTERISTICS OF CHEMICALLY DEPOSITED CADMIUM SULFIDE THIN FILMS

2016 ◽  
Vol 23 (03) ◽  
pp. 1650014 ◽  
Author(s):  
Z. MAKHDOUMI KAKHAKI ◽  
A. YOUZBASHI ◽  
P. SANGPOUR ◽  
A. KAZEMZADEH ◽  
N. NADERI ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Cadmium Sulfide ◽  
Salt Concentration ◽  
Packing Density ◽  
Spherical Particles ◽  
Deposition Mechanism ◽  
Buffer Salt ◽  
X Ray ◽  
Cds Thin Films

Effects of buffer salt concentration on the rate of deposition, dominated deposition mechanism and subsequently the structural, morphological, and optical properties of cadmium sulfide (CdS) thin films deposited by chemical bath deposition (CBD) on glass substrate were investigated. The precursors were chosen to be cadmium chloride (CdCl2) as the cadmium source, thiourea (CS(NH[Formula: see text]) as the sulfur source, ammonium nitrate (NH4NO3) as the buffer salt and ammonia as the complexing agent and the pH controller. The influence of the NH4NO3 concentration on the structure, morphology, film uniformity, stoichiometry and optical properties of CdS thin films was also studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX) spectroscope, uv–visible and photoluminescence (PL) spectroscopes. The XRD studies revealed that all the deposited films exhibited a (002)h/(111)c preferred orientation. The crystallite size was increased from 20[Formula: see text]nm to 30[Formula: see text]nm by the increase of concentration of NH4NO3 from 0.5[Formula: see text]M to 2.5[Formula: see text]M. The morphology of CdS thin films were agglomerated spherical particles consisted of smaller particles. The surface of thin films deposited at the NH4NO3 concentration of 0.5[Formula: see text]M was compact and smooth. The increase of the concentration of NH4NO3 decreased the packing density of the films. The optical band gap was in the range of 2.25–2.4[Formula: see text]eV, which was decreased by the decrement of packing density. The PL spectra showed two peaks centered at 400[Formula: see text]nm and 500[Formula: see text]nm which are attributed to violet and band-to-band emissions, respectively.

scholarly journals Electrical transport properties and Kondo effect in La1−xPrxNiO3−δ thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Van Hien-Hoang ◽  
Nak-Kwan Chung ◽  
Heon-Jung Kim
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Kondo Effect ◽  
Magnetic Moments ◽  
Structural Disorder ◽  
Strongly Correlated ◽  
Electrical Transport Properties ◽  
Strongly Correlated Electron ◽  
Correlated Electron Systems ◽  
Correlated Electron

AbstractThe Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.

Structural, optical and electrical properties of Ni-doped CdS thin films prepared by spray pyrolysis

2013 ◽  
Vol 557 ◽  
pp. 53-59 ◽  
Author(s):  
A. Rmili ◽  
F. Ouachtari ◽  
A. Bouaoud ◽  
A. Louardi ◽  
T. Chtouki ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Optical And Electrical Properties ◽  
Cds Thin Films
Sign in / Sign up

Export Citation Format

Share Document