Microstructures of The Electron-Beam Evaporated InSb Thin Films

Polycrystalline InSb thin films have been prepared by the two-source electron-beam evaporation method. The InSb films have been grown on both pure Si (100) substrate and on Si (100) substrate which has been thermally oxidized to form a thin amorphous SiOx overlayer. The as-grown thin films have been heat treated under N2 atmosphere which is slightly mixed with air. A thin InOx layer is formed on the top surface of the thin film.After heat treatment, the InSb films grown on the oxidized Si substrate shows a preferred (111) orientation. While the films grown on Si substrate do not show such preferred orientation as evidenced by the X-ray diffraction patterns.The TEM cross sectional morphologies of the InSb film grown on oxidized Si substrate shows an ordered arrangement of the grains. While the film grown on the pure Si substrate shows a random arrangement of the grains. The film grown on the oxidized Si substrate also shows the existence of the twin boundary and an ordered arrangement of the precipitation of the second phase.