scholarly journals The Effect of Dopant Type on The Morphology and Electrical Properties of Hollow Polyester Fabric

2019 ◽  
Vol 2 (3) ◽  
pp. 577-582
Author(s):  
Hidayet Köse ◽  
Suat Çetiner
Keyword(s):  
Electrical Properties ◽  
Polyester Fabric ◽  
Preparation Technique ◽  
Electrically Conductive ◽  
Electrical Insulator ◽  
Thermal And Oxidative Stability ◽  
Conducting Materials ◽  
Electrical Conducting ◽  
Intrinsically Conducting Polymers

Intrinsically conducting polymers (ICPs) have been intensively the subject of research since these polymers have superlative electrical and thermophysical properties. Due to the low hydrogen content and aromatic structure, they show perfect chemical, thermal, and oxidative stability and are practically insoluble in all common solvents. Also these polymers are latently electrical conducting materials, especially when doped. Polypyrole (PPy) is a very promising conducting polymer. It can be in easy way processes and has many interesting electrical properties. Also ıt is chemically and thermally stable. Like many other fully aromatic polymers, PPy is an electrical insulator, however, when oxidized it becomes an electrical conductor.The conductivity of PPy strongly consists in the preparation technique, and on the polymer additives and can be increased by about two orders of magnitude. In this study, electrically conductive hollow fabrics were prepared via ın situ chemical polymerization method and scanning electron microscopy (SEM) and electrical properties of conductive hollow fabrics were invesigated.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

scholarly journals In situ grown palladium nanoparticles on polyester fabric as easy-separable and recyclable catalyst for Suzuki-Miyaura reaction

2021 ◽  
pp. 106328
Author(s):  
Tiefeng Xu ◽  
Panting Lu ◽  
Sebastian Wohlrab ◽  
Wenxing Chen ◽  
Armin Springer ◽  
...  
Keyword(s):  
Palladium Nanoparticles ◽  
Polyester Fabric ◽  
Recyclable Catalyst

Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps

2021 ◽  
Vol 132 ◽  
pp. 105907
Author(s):  
Jiaqi He ◽  
Wei-Chih Cheng ◽  
Yang Jiang ◽  
Mengya Fan ◽  
Guangnan Zhou ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thin Barrier

In Situ-Generation of Electrically Conductive Nanoparticles in Bimetallic Phosphate Materials for High Power Lithium Batteries

2019 ◽  
Vol 41 (10) ◽  
pp. 1-7
Author(s):  
Amy C. Marschilok ◽  
Young J. Kim ◽  
Kenneth J. Takeuchi ◽  
Esther S. Takeuchi
Keyword(s):  
High Power ◽  
Lithium Batteries ◽  
Electrically Conductive ◽  
In Situ Generation

scholarly journals Temperature Dependence of Electrical Properties and Crystal Structure of 0.29Pb(In1/2Nb1/2)O3–0.44Pb(Mg1/3Nb2/3)O3–0.27PbTiO3Single Crystals

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Qian Li ◽  
Yun Liu ◽  
Andrew Studer ◽  
Zhenrong Li ◽  
Ray Withers ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Electrical Properties ◽  
Dielectric Permittivity ◽  
Neutron Diffraction ◽  
Electrical Measurement ◽  
Temperature Dependent ◽  
Electromechanical Properties ◽  
Polar Order

We characterized the temperature dependent (~25–200°C) electromechanical properties and crystal structure of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3single crystals usingin situelectrical measurement and neutron diffraction techniques. The results show that the poled crystal experiences an addition phase transition around 120°C whereas such a transition is absent in the unpoled crystal. It is also found that the polar order persists above the maximum dielectric permittivity temperature at which the crystal shows a well-defined antiferroelectric behavior. The changes in the electrical properties and underlying crystal structure are discussed in the paper.

Properties of Thin SiO2 Films with In-Situ Deposition of Poly Si Electrodes

1989 ◽  
Vol 146 ◽  
Author(s):  
Paihung Pan ◽  
Ahmad Kermani ◽  
Wayne Berry ◽  
Jimmy Liao
Keyword(s):  
Electrical Properties ◽  
Breakdown Strength ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
In Situ Deposition ◽  
Different Temperatures ◽  
Flatband Voltage ◽  
Si Films

ABSTRACTElectrical properties of thin (12 nm) SiO2 films with and without in-situ deposited poly Si electrodes have been studied. Thin SiO2 films were grown by the rapid thermal oxidation (RTO) process and the poly Si films were deposited by the rapid thermal chemical vapor deposition (RTCVD) technique at 675°C and 800°C. Good electrical properties were observed for SiO2 films with thin in-situ poly Si deposition; the flatband voltage was ∼ -0.86 V, the interface state density was < 2 × 1010/cm2/eV, and breakdown strength was > 10 MV/cm. The properties of RTCVD poly Si were also studied. The grain size was 10-60 rim before anneal and was 50-120 rim after anneal. Voids were found in thin (< 70 nm) RTCVD poly Si films. No difference in either SiO2 properties or poly Si properties was observed for poly Si films deposited at different temperatures.

THE PROSPECTS OF USING CARBON NANOTUBES TO IMPART FUNCTIONAL PROPERTIES TO THE SURFACE OF POLYMER MATERIALS (review)

2021 ◽  
pp. 11-21
Author(s):  
L.V. Solovyanchik ◽  
◽  
S.V. Kondrashov ◽  
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Properties ◽  
Functional Properties ◽  
Scientific Literature ◽  
Conductive Polymer ◽  
Polymer Materials ◽  
Mechanism Of Formation ◽  
Electrically Conductive ◽  
Structured Surface

Presents a review of the scientific literature on various methods for producing electrically conductive polymer materials and coatings. The prospects of using carbon nanotubes (CNT) to impart high electrical properties to the surface of materials are shown. The mechanism of formation of the structured surface of polymer materials with CNT is described. It is shown that the use of CNT is a promising way to impart electrically conductive and superhydrophobic properties to the surface.

Incessant and economical technique for in-situ preparation of metallicnano on/in polyester fabric

2021 ◽  
Vol 64 (2) ◽  
pp. 68-70
Author(s):  
Satyajeet B. Chaudhari ◽  
Bharat H. Patel ◽  
Aadhar A. Mandot
Keyword(s):  
Metal Ion ◽  
Metallic Nanoparticles ◽  
Room Temperature ◽  
Polyester Fabric ◽  
Atmospheric Conditions ◽  
Spherical Nanoparticles ◽  
In Situ Preparation

Composite textiles consisting of metallic nanoparticles dispersed in textiles fabric have been prepared by the reduction of metal ion from its salt at room temperature under normal atmospheric conditions. Morphology and structures have been investigated by SEM. Spherical nanoparticles were found to be homogeneously dispersed in/on the polyester (PET) fiber and the particles were elementally analyzed by the XRF technique.

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