Harnessing Conductive Oxide Interfaces for Resistive Random-Access Memories

Two-dimensional electron gases (2DEGs) can be formed at some oxide interfaces, providing a fertile ground for creating extraordinary physical properties. These properties can be exploited in various novel electronic devices such as transistors, gas sensors, and spintronic devices. Recently several works have demonstrated the application of 2DEGs for resistive random-access memories (RRAMs). We briefly review the basics of oxide 2DEGs, emphasizing scalability and maturity and describing a recent trend of progression from epitaxial oxide interfaces (such as LaAlO3/SrTiO3) to simple and highly scalable amorphous-polycrystalline systems (e.g., Al2O3/TiO2). We critically describe and compare recent RRAM devices based on these systems and highlight the possible advantages and potential of 2DEGs systems for RRAM applications. We consider the immediate challenges to revolve around scaling from one device to large arrays, where further progress with series resistance reduction and fabrication techniques needs to be made. We conclude by laying out some of the opportunities presented by 2DEGs based RRAM, including increased tunability and design flexibility, which could, in turn, provide advantages for multi-level capabilities.

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Polymer-based non-volatile resistive random-access memory device fabrication with multi-level switching and negative differential resistance state

Organic Electronics ◽

10.1016/j.orgel.2021.106228 ◽

2021 ◽

pp. 106228

Author(s):

Sobia Ali Khan ◽

Mehr Khalid Rahmani ◽

HyungWon Kim ◽

Muhammad Farooq Khan ◽

Changhun Yun ◽

...

Keyword(s):

Negative Differential Resistance ◽

Random Access ◽

Random Access Memory ◽

Differential Resistance ◽

Memory Device ◽

Resistive Random Access Memory ◽

Device Fabrication ◽

Access Memory ◽

Resistance State ◽

Multi Level

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Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory

Advanced Electronic Materials ◽

10.1002/aelm.202100209 ◽

2021 ◽

pp. 2100209

Author(s):

Hae Jin Kim ◽

Jihun Kim ◽

Tae Gyun Park ◽

Jung Ho Yoon ◽

Cheol Seong Hwang

Keyword(s):

Random Access ◽

Random Access Memory ◽

Level Control ◽

Access Memory ◽

Conductive Filament ◽

Cone Structure ◽

Enhanced Resistance ◽

Conductive Bridge ◽

Multi Level

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Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse

Electronics ◽

10.3390/electronics10060731 ◽

2021 ◽

Vol 10 (6) ◽

pp. 731

Author(s):

Jinfu Lin ◽

Shulong Wang ◽

Hongxia Liu

Keyword(s):

Random Access ◽

Resistive Random Access Memory ◽

Programming Algorithm ◽

Voltage Amplitude ◽

Strength Change ◽

Value Range ◽

Multi Level ◽

Conductance States ◽

Switching Characteristics ◽

Sandwiched Structure

In this paper, the resistive switching characteristics in a Ti/HfO2: Al/Pt sandwiched structure are investigated for gradual conductance tuning inherent functions. The variation in conductance of the device under different amplitudes and voltage pulse widths is studied. At the same time, it was found that the variation in switching parameters in resistive random-access memory (RRAM) under impulse response is impacted by the initial conductance states. The device was brought to a preset resistance value range by energizing a single voltage amplitude pulse with a different number of periodicities. This is an efficient and simple programming algorithm to simulate the strength change observed in biological synapses. It exhibited an on/off of about 100, an endurance of over 500 cycles, and a lifetime (at 85 °C) of around 105 s. This multi-level switching two-terminal device can be used for neuromorphic applications to simulate the gradual potentiation (increasing conductance) and inhibition (decreasing conductance) in an artificial synapse.

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Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

Communications Physics ◽

10.1038/s42005-019-0227-4 ◽

2019 ◽

Vol 2 (1) ◽

Cited By ~ 8

Author(s):

W. X. Zhou ◽

H. J. Wu ◽

J. Zhou ◽

S. W. Zeng ◽

C. J. Li ◽

...

Keyword(s):

Carrier Density ◽

Room Temperature ◽

Electronic Devices ◽

General Concept ◽

Polar Phase ◽

Strongly Correlated ◽

Two Dimensional ◽

Single System ◽

Oxide Interfaces ◽

Mobile Carrier

Abstract Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba0.2Sr0.8TiO3 thin films at the LaAlO3/Ba0.2Sr0.8TiO3 interface at room temperature. The polarity of a ∼3.2 nm Ba0.2Sr0.8TiO3 thin film is preserved with a two-dimensional mobile carrier density of ∼0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO3 and the polarization of Ba0.2Sr0.8TiO3 is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.

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Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices

Electronics ◽

10.3390/electronics9122098 ◽

2020 ◽

Vol 9 (12) ◽

pp. 2098

Author(s):

Xiaojuan Lian ◽

Xinyi Shen ◽

Jinke Fu ◽

Zhixuan Gao ◽

Xiang Wan ◽

...

Keyword(s):

Electronic Devices ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Research Approach ◽

Access Memory ◽

Device Stability ◽

Switching Characteristics ◽

Electronic Synapse ◽

Artificial Intelligence Systems

Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results.

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On-Chip ECC for Multi-Level Random Access Memories

10.1109/itw.1989.761433 ◽

2005 ◽

Cited By ~ 2

Author(s):

R.M. Goodman ◽

M. Sayano

Keyword(s):

Random Access ◽

Multi Level ◽

On Chip

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Design of HIL for Multi-Level Inverter Using Zynq-7000 Platform – Part 1

Periodica Polytechnica Electrical Engineering and Computer Science ◽

10.3311/ppee.10902 ◽

2017 ◽

Vol 61 (3) ◽

pp. 264 ◽

Cited By ~ 1

Author(s):

Balázs Farkas ◽

Károly Veszprémi

Keyword(s):

Rapid Prototyping ◽

Software Design ◽

System Modeling ◽

Electronic Devices ◽

Electronic System ◽

Power Electronic ◽

Hardware In The Loop ◽

Model Based ◽

New Approaches ◽

Multi Level

Development of power electronic devices requires multi -disciplined engineering activities. These cover the thermal, electrical and software design. Due to this design complexity rapid prototyping methods and model-based design are becoming more and more important in the R&D projects in this field. In case of the multi-level inverter based drives the strict reliability requirements make the aforementioned new approaches more attractive. This article is the first part of the series which introduces the application of the model based design and Hardware-in-the-Loop (HIL) tools through the modeling of a Cellular H-Bridge inverter (CHB). This article focuses on the power electronic system modeling and verification. The model of the CHB is implemented and verified in Matlab.

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VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES

SPIN ◽

10.1142/s2010324712400024 ◽

2012 ◽

Vol 02 (03) ◽

pp. 1240002 ◽

Cited By ~ 84

Author(s):

PEDRAM KHALILI AMIRI ◽

KANG L. WANG

Keyword(s):

Magnetic Anisotropy ◽

Random Access ◽

Magnetic Tunnel Junction ◽

Magnetic Films ◽

Magnetization Dynamics ◽

Spintronic Devices ◽

Magnetic Random Access Memory ◽

Thin Magnetic Films ◽

Potential Applications ◽

New Generation

Electric-field-control of magnetism can dramatically improve the energy efficiency of spintronic devices and enhance the performance of magnetic memories. More generally, it expands the range of applications of nonvolatile spintronic devices, by making them energetically competitive compared to conventional semiconductor solutions for logic and computation, thereby potentially enabling a new generation of ultralow-power nonvolatile spintronic systems. This paper reviews recent experiments on the voltage-controlled magnetic anisotropy (VCMA) effect in thin magnetic films, and their device implications. The interfacial perpendicular anisotropy in layered magnetic material stacks, as well as its modulation by voltage, are discussed. Ferromagnetic resonance experiments and VCMA-induced high-frequency magnetization dynamics are reviewed. Finally, we discuss recent progress on voltage-induced switching of magnetic tunnel junction devices and its potential applications to magnetic random access memory (MRAM).

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