scholarly journals Mixed Films Based on MgO for Secondary Electron Emission Application: General Trends and MOCVD Prospects

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 176
Author(s):  
Inga G. Vasilyeva ◽  
Evgeniia S. Vikulova ◽  
Alena A. Pochtar ◽  
Natalya B. Morozova
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Amorphous Phases ◽  
Mixed Films ◽  
Metal Organic ◽  
A New Technique ◽  
Organic Chemical Vapor Deposition

Doping process is widely used to improving emission performance of MgO films thicker than 10 nm via assisting the surface recharge and changing in electron structure. The present paper briefly reviews this strategy in a search for the new materials and structures being effective for secondary electron emission (SEE) and their diagnostics. Then, Metal-Organic Chemical Vapor Deposition (MOCVD) coupled with the specially selected precursor is suggested here as a new technique that transforms the refractory oxides to nanoscale, defect-disordered materials able to solid-solid interaction at 450 °C. Primary experiments have been performed for demanded mixed films based on MgO with ZrO2 and CeO2 additions. A dopant impact on facilitating the formation of oxygen vacancies in the host oxide and on the features of new mixed phases have been studied by new diagnostic means, based primarily on chemical method of differential dissolution. The method brought out the effective solvents that were the probes for identifying the nanoscale and amorphous phases possessing by the different defects on the surface of MgO films and determining contents of these phases. This approach allowed us to explain the origin of mixed phases and to estimate contribution of each from them in the macroscopic SEE properties.

Ballistic-Electron-Emission Microscopy (BEEM) Studies of Gainp/GaAs Heterostructures

1995 ◽  
Vol 417 ◽  
Author(s):  
J. J. O'Shea ◽  
C. M. Reaves ◽  
M. A. Chin ◽  
S. P. Denbaars ◽  
A. C. Gossard ◽  
...  
Keyword(s):  
Electron Emission ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Metal Organic ◽  
Emission Microscopy ◽  
Valence Bands ◽  
P Type ◽  
Organic Chemical Vapor Deposition

AbstractBallistic-electron-emission microscopy (BEEM) has been used to study band-offsets in n-and p-type GaInP/GaAs heterostructures. We determine room temperature offsets of 30 meV and 350 meV in the conduction and valence bands, respectively, for thin GaInP layers grown by metal-organic chemical vapor deposition (MOCVD) at 610°C. Low temperature (77 K) measurements also indicate at least 90% of the band discontinuity lies in the valence band for these ordered GaInP samples.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition

2021 ◽  
Vol 118 (16) ◽  
pp. 162109
Author(s):  
Esmat Farzana ◽  
Fikadu Alema ◽  
Wan Ying Ho ◽  
Akhil Mauze ◽  
Takeki Itoh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Schottky Barrier Diode ◽  
Organic Chemical ◽  
Field Plate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal Organic Chemical Vapor Deposition Growth of High Spectral Quality Site-Controlled InAs Quantum Dots UsingIn situPatterning

2011 ◽  
Vol 4 (11) ◽  
pp. 112001 ◽  
Author(s):  
Stephane Faure ◽  
Masao Nishioka ◽  
Satomi Ishida ◽  
Denis Guimard ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Spectral Quality ◽  
Chemical Vapor Deposition Growth ◽  
Inas Quantum Dots ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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