scholarly journals Optical Absorption in Si:H Thin Films: Revisiting the Role of the Refractive Index and the Absorption Coefficient

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1081
Author(s):  
Jarmila Müllerová ◽  
Pavol Šutta ◽  
Michaela Holá
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Absorption Coefficient ◽  
Light Trapping ◽  
Optical Path Length ◽  
Microcrystalline Silicon ◽  
Absorption Properties ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

This paper reports on absorption properties of thin films of hydrogenated amorphous and microcrystalline silicon considered for absorption-based applications, such as solar cell, photodetectors, filters, sensors, etc. A series of four amorphous and four microcrystalline samples PECVD deposited under varied hydrogen dilution was under consideration. Various absorption metrics, based separately on the absorption coefficient and the refractive index (single pass absorption, optical path length, classical light trapping limit) or direct absorptance calculated by the Yablonovitch concept based on a mutual role of them were examined and compared. Differences in absorption abilities are related to the evolving thin film microstructure.

Thermodynamic Model of the Role of Hydrogen Dilution in Plasma Deposition of Microcrystalline Silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
J Robertson
Keyword(s):  
Vapour Deposition ◽  
Plasma Deposition ◽  
Chemical Vapour ◽  
Microcrystalline Silicon ◽  
Surface Mobility ◽  
Hydrogen Dilution ◽  
Surface Nucleation ◽  
Precursor Phase ◽  
Hydrogenated Amorphous

ABSTRACTHydrogen dilution is used to promote the nucleation and growth of microcrystalline Si (μc-Si) by plasma enhanced chemical vapour deposition (PECVD). The free energy of μc-Si and hydrogenated amorphous silicon (a-Si:H) is analysed as a function of Si:H composition in order to derive the effect of hydrogen dilution. It is shown that increasing the hydrogen content of the a-SiHx precursor phase increases the relative stability of μc-Si slightly, but strongly increases the driving force for nucleation. The higher stability of μc-Si is the fundamental origin of the higher etch rates of a-Si:H, while surface mobility models do not account for sub-surface nucleation of μc-Si.

scholarly journals Preparation and Studying the Optical Properties of (Sb2o3) Thin Films

2018 ◽  
Vol 26 (10) ◽  
pp. 249-256
Author(s):  
Waleed Khalid Kadhim
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Thermal Evaporation ◽  
Glass Slide ◽  
Antimony Trioxide ◽  
Hot Plate ◽  
Different Thickness

In this paper I present the preparation of (Sb2o3) thin films using thermal evaporation in vacuum, procedure with different thickness  (100 ,150 ,200 ,and 250) nm, by using ( hot plate) from Molybdenum matter at temperature in ( 9000c) and the period of time (15mint) ,the prepared in a manner thermal evaporation in a vacuum and precipitated on glass bases, pure Antimony Trioxide (sb2o3 ) thin films with various condition have been successfully deposited by (T.E.V) on glass slide substrates. The substrates temperature of about 100oC and the vacuum of about 10-6 torr, to investigated oxidation of evaporated, measure spectra for prepared films in arrange of wavelength (250 – 1100 nm). The following optical properties have been calculated: the absorption coefficient, the forbidden (Eg) for direct and indirect transitions "absorbance, refractive index,  extinction coefficient, real and imaginary parts" of the dielectric constant.

scholarly journals Deposition Time induced Structural and Optical Properties of Lead Tin Sulphide Thin Films

2021 ◽  
pp. 455-458
Author(s):  
J. Damisa ◽  
J. O. Emegha ◽  
I. L. Ikhioya
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Tin Oxide ◽  
Deposition Time ◽  
Deposition Process ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Prepared Material

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.

scholarly journals Annealing Effect on Some Optical Properties of Cr2O3 Thin Films Prepared by Spray Pyrolysis Technique

2011 ◽  
Vol 8 (2) ◽  
pp. 561-565
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Spray Pyrolysis ◽  
Annealing Temperature ◽  
Spray Pyrolysis Technique ◽  
Annealing Effect ◽  
Before And After

Cr2O3 thin films have been prepared by spray pyrolysis on a glass substrate. Absorbance and transmittance spectra were recorded in the wavelength range (300-900) nm before and after annealing. The effects of annealing temperature on absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant and optical conductivity were expected. It was found that all these parameters increase as the annealing temperature increased to 550°C.

scholarly journals Optical constants of sputtered beryllium thin films determined from photoabsorption measurements in the spectral range 20.4–250 eV

2020 ◽  
Vol 27 (1) ◽  
pp. 75-82
Author(s):  
Mikhail Svechnikov ◽  
Nikolay Chkhalo ◽  
Alexey Lopatin ◽  
Roman Pleshkov ◽  
Vladimir Polkovnikov ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Synchrotron Radiation ◽  
Initial Data ◽  
Absorption Coefficient ◽  
Energy Range ◽  
Transmission Coefficient ◽  
Radiation Source ◽  
Optical Constants ◽  
Free Standing

In this work, the refractive index of beryllium in the photon energy range 20.4–250 eV was experimentally determined. The initial data include measurements of the transmittance of two free-standing Be films with thicknesses of 70 nm and 152 nm, as well as reflectometric measurements of similar films on a substrate. Measurements were carried out at the optics beamline of the BESSY II synchrotron radiation source. The absorption coefficient β was found directly from the transmission coefficient of the films, and the real part of the polarizability δ was calculated from the Kramers–Kronig relations. A comparison is carried out with results obtained 20 years ago at the ALS synchrotron using a similar methodology.

The Role of SiH3 Diffusion in Determining the Surface Smoothness of Plasma-Deposited Amorphous Si Thin Films: An Atomic-Scale Analysis

2005 ◽  
Vol 862 ◽  
Author(s):  
Mayur S. Valipa ◽  
Tamas Bakos ◽  
Eray S. Aydil ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Density Functional ◽  
Activation Barrier ◽  
Density Functional Theory Calculations ◽  
Atomic Scale ◽  
Functional Theory ◽  
Weak Adsorption ◽  
Dynamics Simulations ◽  
Hydrogenated Amorphous

AbstractDevice-quality hydrogenated amorphous silicon (a-Si:H) thin films grown under conditions where the SiH3 radical is the dominant deposition precursor are remarkably smooth, as the SiH3 radical is very mobile and fills surface valleys during its diffusion on the a-Si:H surface. In this paper, we analyze atomic-scale mechanisms of SiH3 diffusion on a-Si:H surfaces based on molecular-dynamics simulations of SiH3 radical impingement on surfaces of a-Si:H films. The computed average activation barrier for radical diffusion on a-Si:H is 0.16 eV. This low barrier is due to the weak adsorption of the radical onto the a-Si:H surface and its migration predominantly through overcoordination defects; this is consistent with our density functional theory calculations on crystalline Si surfaces. The diffusing SiH3 radical incorporates preferentially into valleys on the a-Si:H surface when it transfers an H atom and forms a Si-Si backbond, even in the absence of dangling bonds.

Optical Nonlinearity of Sputtered Co3O4-SiO2-TiO2 Thin Films

2001 ◽  
Vol 703 ◽  
Author(s):  
Hiroki Yamamoto ◽  
Takashi Naito ◽  
Kazuyuki Hirao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Excited State ◽  
Absorption Coefficient ◽  
Extinction Coefficient ◽  
Ground State ◽  
Optical Nonlinearity ◽  
Tio2 Thin Films ◽  
Change Mechanism ◽  
Band Filling

ABSTRACTOptical non-linearity of cobalt oxide with SiO2-TiO2 additives was investigated, and the change mechanism of the refractive index (n) and extinction coefficient (k), based on the relation between band structure and optical non-linearity of the thin films, was discussed. Refractive index and extinction coefficient of Co3O4 thin films in the ground state were 3.17 and 0.42, respectively. Both n and k decreased by irradiation from a pulse laser with 650 nm of wavelength (1.91eV). These values in the excited state were 2.91 and 0.41, respectively. n2 estimated from the change of n and k was −2.8 ×10−11 m2/W. The film had a band gap corresponding to 2.06eV, indicating that it was widened by the band filling effect during the laser irradiation at 1.91eV, and this led to the decrease in absorption coefficient and refractive index.

Role of Substrate Temperature on the Properties of Microcrystalline Silicon Thin Films

2001 ◽  
Vol 40 (Part 1, No. 11) ◽  
pp. 6284-6289 ◽  
Author(s):  
Sumita Mukhopadhyay ◽  
Subhas Chandra Saha ◽  
Swati Ray
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films
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