scholarly journals Preparation and Spectrum Characterization of a High Quality Linear Variable Filter

Coatings ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 308 ◽  
Author(s):  
Haolong Tang ◽  
Jinsong Gao ◽  
Jian Zhang ◽  
Xiaoyi Wang ◽  
Xiuhua Fu
Keyword(s):  
Ion Beam ◽  
Single Layer ◽  
Spot Size ◽  
Optical Systems ◽  
Thickness Variation ◽  
Ion Beam Sputtering ◽  
Space Applications ◽  
Central Wavelength ◽  
Beam Sputtering ◽  
Linear Variable Filter

To meet the requirements for lightweight, miniaturized dispersive optical systems for space applications, linear variable filters with a high transmittance and spatial dispersion coefficient are proposed. The filters were produced with dual ion beam sputtering, where a single layer thickness variation was achieved with a deposition rate adjustment based on a linear variable correction formula. A linear variable trend matching method was used to correct the film thickness based on the reduction of the mismatch error between two materials: Ta2O5 and SiO2. The influence of the spectral and spatial measuring average effects was addressed by sampling the spot size optimization. This paper presents an all-dielectric linear variable filter that operates between 520 and 1000 nm, with an excellent linear dependence of 40 nm/mm over 12 mm. The linear variable filter possessed a 2.5% bandwidth, and its transmittance was found to be >80% at the central wavelength of the band, with a 0.1% transmittance in the cut-off region. These results indicate great potential for optical devices for space applications, and the developed process has good reproducibility and stability.

scholarly journals Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Sung Kim ◽  
Dong Hee Shin ◽  
Dong Yeol Shin ◽  
Chang Oh Kim ◽  
Jae Hee Park ◽  
...  
Keyword(s):  
Recent Progress ◽  
Ion Beam ◽  
Single Layer ◽  
Optoelectronic Device ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
The Past ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Device Applications

During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition ofSiOxsingle layer orSiOx/SiO2multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of SiOxlayers on the luminescence are analyzed in detail and discussed based on possible mechanisms.

The Enhanced Magnetization Observed in FE/mo Multilayers Deposited by Ion-Beam Sputtering

1991 ◽  
Vol 231 ◽  
Author(s):  
Y. Wang ◽  
F.Z. Cui ◽  
W.Z. Li ◽  
Y.D. Fan
Keyword(s):  
Magnetic Properties ◽  
Layer Thickness ◽  
Lattice Spacing ◽  
Ion Beam ◽  
Single Layer ◽  
Film Plane ◽  
Ion Beam Sputtering ◽  
Modulated Structure ◽  
Beam Sputtering ◽  
Structural And Magnetic Properties

AbstractFe/Mo multilayers, with varied Fe single layer thickness, tF, and Mo single layer thickness, tMO, were deposited by using a focusing ion-beam sputtering technique. Their structural and magnetic properties were studied. The periodic modulated structure was observed for all samples. An enhancement of magnetization over the value of bulk Fe was noticed for some samples. The change of lattice spacing of Fe layers, as a result of compress stress in the film plane, was considered to be responsible for the increase of the magnetization for Fe/Mo multilayers.

Highly Transparent Arcproof Films for Space Applications

1998 ◽  
Vol 551 ◽  
Author(s):  
A. J. Adorjan ◽  
C. Alexander ◽  
T. L. Blanchard ◽  
E. Bruckner ◽  
R. Ferrante ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Electrical Transport ◽  
Ion Beam ◽  
Heat Treating ◽  
Ion Beam Sputtering ◽  
Sheet Resistivity ◽  
Space Applications ◽  
Transparent Films ◽  
Beam Sputtering ◽  
Commercial Applications

AbstractHighly transparent films with tailorable sheet resistivity were prepared by ion-beam sputtering of indium tin oxide (ITO) with MgF2 or SiO2 in the presence of high-purity air. Sheet resistivities of 103−101 ohms/square (ω/–) and visible transmittances as high as 92% (not corrected for substrate absorption) were obtained in films ∼30 nm thick. Resistivity increased by as much as two orders of magnitude in the first year after preparation; however, thicker films (e.g. 80 nm) were much more stable but somewhat less transparent. Preliminary data from exposure of film samples to atomic oxygen in a plasma asher indicate minimal degradation in optical properties. Heat-treating pure ITO in air produced transparent, slightly conductive films but with poorer stability of sheet resistivity in air than co-deposited ITO with either SiO2, or MgF2. Electrical transport measurements yielded new information on the electronic properties of ITO and related materials. These films show promise as low-absorption static bleedoff coatings for space photovoltaic arrays as well as CRT faceplates and other commercial applications.

FABRICATION OF LSMO SINGLE LAYERS AND LSMO/YBCO DOUBLE LAYERS

2006 ◽  
Vol 05 (04n05) ◽  
pp. 511-515 ◽  
Author(s):  
HONG ZHU ◽  
MASANORI OKADA ◽  
ATSUSHI KAMIYA ◽  
AJAY KRISHNO SARKAR ◽  
MASAHITO MATSUI ◽  
...  
Keyword(s):  
Double Layer ◽  
Lattice Mismatch ◽  
Ion Beam ◽  
Single Layer ◽  
Epitaxial Films ◽  
Double Layers ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Substrate Temperatures ◽  
Oriented Phase

( La , Sr ) MnO 3 (LSMO) single-layer and LSMO/YBCO double-layer films have been grown on LAO and MgO substrates using ion beam sputtering. For LSMO single-layer films, the highly epitaxial films can be grown at lower substrate temperatures down to 500°C. The epitaxy of the films, which is degraded with increasing TS, can be restored by supply of plasma oxygen. Smaller lattice mismatch of LSMO on LAO gives two-dimensional step-and-terrace type growth, whereas on MgO grain type growth is observed due to larger mismatch. For the double-layer films, LSMO layer can be grown epitaxially on a-oriented YBCO underlayer, but a part of the underlying a-YBCO is changed into c-YBCO during the deposition of overlayer. For c-YBCO underlayer, a part of the underlying c-YBCO is changed into (110)-oriented phase after the deposition of overlayer. Then it is necessary to deposit the overlayer at lower temperatures.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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