FABRICATION OF LSMO SINGLE LAYERS AND LSMO/YBCO DOUBLE LAYERS

2006 ◽  
Vol 05 (04n05) ◽  
pp. 511-515 ◽  
Author(s):  
HONG ZHU ◽  
MASANORI OKADA ◽  
ATSUSHI KAMIYA ◽  
AJAY KRISHNO SARKAR ◽  
MASAHITO MATSUI ◽  
...  

( La , Sr ) MnO 3 (LSMO) single-layer and LSMO/YBCO double-layer films have been grown on LAO and MgO substrates using ion beam sputtering. For LSMO single-layer films, the highly epitaxial films can be grown at lower substrate temperatures down to 500°C. The epitaxy of the films, which is degraded with increasing TS, can be restored by supply of plasma oxygen. Smaller lattice mismatch of LSMO on LAO gives two-dimensional step-and-terrace type growth, whereas on MgO grain type growth is observed due to larger mismatch. For the double-layer films, LSMO layer can be grown epitaxially on a-oriented YBCO underlayer, but a part of the underlying a-YBCO is changed into c-YBCO during the deposition of overlayer. For c-YBCO underlayer, a part of the underlying c-YBCO is changed into (110)-oriented phase after the deposition of overlayer. Then it is necessary to deposit the overlayer at lower temperatures.

2005 ◽  
Vol 887 ◽  
Author(s):  
Hong Zhu ◽  
Masanori Okada ◽  
Hidetaka Nakashima ◽  
Ajay K. Sarkar ◽  
Hirofumi Yamasaki ◽  
...  

ABSTRACTDouble Layer Processes of LBMO/YBCO and Crystalline Degradations Oxide microwave devices will be widely expected in mobile communication system in the near future in the world. Superconducting YBa2Cu3Ox (YBCO) thin films are most advisable for microwave filter devices due to their very low surface resistance. Next generation devices are tunable microwave filters formed by double layers consisting of YBCO and ferromagnetic manganites such as La(Ba)MnO3 (LBMO).In order to complete excellent double layers, we must first obtain proper techniques to fabricate perfect a/c-phases of YBCO and excellent crystalline LBMO single layers on substrate at low substrate temperatures (Ts), and then fabricate their double layers. We have tried an ion beam sputtering (IBS), then now we can control the perfect a-c orientation growths of YBCO. The minimum surface roughness is 1 nm for the c-phase and 0.3 nm for the a-phase.Excellent crystalline thin films of LBMO can be grown by IBS with controlling Ts, oxygen pressure (Po) and oxygen molecular or plasma supply on MgO and LAO substrates. It can be grown down to 480 deg C. The minimum rocking half-width is 0.01 deg, and the minimum surface roughness is 0.8 nm. As-grown LBMO film shows different metal-insulator transition and Curier temperatures. The results are interpreted by a phase separation and magnetostriction.The double layers of YBCO on LBMO and LBMO on YBCO were fabricated by IBS. In YBCO/LBMO, the excellent a/c-YBCO can be grown on the underlying LBMO at 600-650 °C. The crystallinity of overlying YBCO is nearly the same with that of the single layers on MgO and LAO. The mosaicity of YBCO is much better than that of the single layers on MgO and LAO. It is noticed that the underlying LBMO crystallinity can be improved, and the mosaicity is not degraded after the double layer deposition. A n inferiority is that the double layer surface is much degraded. Then we should fabricate the smooth underlying LBMO. In LBMO/YBCO, the excellent crystalline LBMO can be grown on the underlying a/c-YBCO at 650-700 deg C. The better crystalline LBMO grows on the better crystalline YBCO. The LBMO/a-YBCO clearly shows XRD peak separations while the LBMO/c-YBCO shows peak overlappings. The crystallinity of overlying LBMO is slightly poorer that that of the single layers on LAO. The mosaicity of LBMO is much poorer than that of the single layers of LBMO on LAO, but is almost the same with that of the underlying YBCO. It should be noticed that the crystallinity of underlying YBCO is degraded considerably after the double layer deposition. Then we should deposite the overlying LBMO at low temperatures. However a superiority is that the double layer surface is not degraded or rather improved. Now we are estimating time-dependence of the crystalline degradations on the single and double layers. YBCO crystallinity is easily degraded with time but LBMO is very stable. Then LBMO/YBCO is advisable in terms of a long term degradation.


2012 ◽  
Vol 1454 ◽  
pp. 69-74
Author(s):  
Kenichi Uehara ◽  
Sanapa Lakshmi Reddy ◽  
Akira Okada ◽  
Miyoshi Yokura ◽  
Shintaro Kobayashi ◽  
...  

ABSTRACTHexagonal ZnO was grown on hexagonal (001) sapphire substrate, then cubic La(Sr)MnO3(LSMO) was grown on ZnO underlayer by ion beam sputtering at substrate temperatures of 550-750°C to obtain double-layer of LSMO/ZnO. Out-of-plane (001) oriented ZnO was grown with in-plane orientation of [10-10](0001)ZnO//[11-20](0001)sapphire. Mixed phase of LSMO with out-of-plane (001), (110) and (111) orientations was grown on (001) ZnO usually. However each single phase of LSMO could be grown by controlling deposition conditions. The LSMO grains have their in-plane orientations of [110](110)LSMO //[10-10](0001)ZnO and [110](111)LSMO//[11-20](0001)ZnO.


Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.


1999 ◽  
Vol 38 (Part 1, No. 6A) ◽  
pp. 3682-3688 ◽  
Author(s):  
Takaaki Tsurumi ◽  
Shuichi Nishizawa ◽  
Naoki Ohashi ◽  
Takeshi Ohgaki

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FB10 ◽  
Author(s):  
Akira Okada ◽  
Kenichi Uehara ◽  
Miyoshi Yokura ◽  
Masahito Matsui ◽  
Katsuhiko Inaba ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Sung Kim ◽  
Dong Hee Shin ◽  
Dong Yeol Shin ◽  
Chang Oh Kim ◽  
Jae Hee Park ◽  
...  

During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition ofSiOxsingle layer orSiOx/SiO2multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of SiOxlayers on the luminescence are analyzed in detail and discussed based on possible mechanisms.


1985 ◽  
Vol 47 ◽  
Author(s):  
H. Windischmann ◽  
J. M. Cavese ◽  
R. W. Collins ◽  
R. D. Harris ◽  
J. Gonzalez-Hernandez

ABSTRACTThe crystallinity for silicon and germanium films deposited by ion beam sputtering (IBS) as a function of substrate temperatures was determined using Raman spectroscopy, spectroscopic ellipsometry, electrical conductivity and x-ray diffraction measurements. The results show that IBS silicon crystallizes between 300–350°C while germanium crystallizes between 20–200°C. Reasonably good agreement is obtained among the four distinctively different characterization techniques in identifying the onset of crystallinity. A direct relationship is observed between the substrate temperature required for crystallization and the log of the operating pressure for various deposition techniques. Energetic particle stimulation during film growth appears to reduce the crystallization temperature at a given operating pressure. Raman data show that the crystallization temperature depends on the deposition rate. A graded structure is observed in films deposited above 300°C, probably due to oxygen contamination.


Coatings ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 308 ◽  
Author(s):  
Haolong Tang ◽  
Jinsong Gao ◽  
Jian Zhang ◽  
Xiaoyi Wang ◽  
Xiuhua Fu

To meet the requirements for lightweight, miniaturized dispersive optical systems for space applications, linear variable filters with a high transmittance and spatial dispersion coefficient are proposed. The filters were produced with dual ion beam sputtering, where a single layer thickness variation was achieved with a deposition rate adjustment based on a linear variable correction formula. A linear variable trend matching method was used to correct the film thickness based on the reduction of the mismatch error between two materials: Ta2O5 and SiO2. The influence of the spectral and spatial measuring average effects was addressed by sampling the spot size optimization. This paper presents an all-dielectric linear variable filter that operates between 520 and 1000 nm, with an excellent linear dependence of 40 nm/mm over 12 mm. The linear variable filter possessed a 2.5% bandwidth, and its transmittance was found to be >80% at the central wavelength of the band, with a 0.1% transmittance in the cut-off region. These results indicate great potential for optical devices for space applications, and the developed process has good reproducibility and stability.


2013 ◽  
Vol 873 ◽  
pp. 479-485
Author(s):  
Xi Zhou ◽  
Chong Wang ◽  
Jie Yang ◽  
Ying Xia Jin ◽  
Yu Yang

A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates. The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique. The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers. In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears. When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands. The mechanism of three-factor-interactions of nanoislands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.


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