scholarly journals Effect of Sulfurization Time on the Physical Properties of Tin (II) Monosulfide Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 802
Author(s):  
Vasudeva Reddy Minnam Reddy ◽  
Sreedevi Gedi ◽  
Rutuja U. Amate ◽  
K. T. Ramakrishna Reddy ◽  
Woo Kyoung Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Absorption Edge ◽  
Elemental Sulfur ◽  
Sulfur Vapor ◽  
Peak Intensity ◽  
Diffraction Patterns ◽  
Tin Metal ◽  
Metal Layers ◽  
Sulfurization Time

Tin (II) monosulfide (SnS) films were prepared via sulfurization using sputtered Sn precursors of the tin metal layers in the presence of elemental sulfur vapor as a function of sulfurization time (ts) in the range of 30–180 min while keeping other parameters constant. The properties of these sulfurized layers were examined through suitable characterization techniques. The diffraction patterns exhibited various planes with the orientations (110), (120), (021), (101), (111), (211), (131), (210), (141), (002), (112), (122), and (042) corresponding to orthorhombic SnS at ts ≤ 90 min. However, for ts ≥ 120 min, the diffraction patterns showed a single (111) plane and enhanced the intensity of the peak with the increase of ts up to 150 min; with further increase of time, the peak intensity was found to decrease. The Raman spectra of films sulfurized at various ts showed modes at 95, 162, 189, 219, and 284 cm−1 for times were lower than 120 min and 95, 189, and 219 cm−1 for ts ≥ 120 min, related to SnS. In the transmittance spectra of the sulfurized films, it is clear that the film grown at ts = 30 min had higher transmittance, and with the increase of ts to 120 min, transmittance was decreased. For further extension of ts to 150 min, a sharp falling of the absorption edge was observed.

Electron diffraction studies of amorphous and polycrystalline thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 118-119
Author(s):  
D J H Cockayne ◽  
D R McKenzie
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Polycrystalline Materials ◽  
Good Resolution ◽  
Scattered Intensity ◽  
Radial Density ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Nitrogen Ion ◽  
Diffraction Patterns

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.

Microstructure of YBa2Cu3O7-x thin films deposited by dc sputtering

1989 ◽  
Vol 47 ◽  
pp. 172-173
Author(s):  
O. Eibl ◽  
G. Gieres ◽  
H. Behner
Keyword(s):  
Thin Films ◽  
Cross Sections ◽  
Intermediate Layer ◽  
Amorphous State ◽  
Critical Currents ◽  
Dc Sputtering ◽  
State Process ◽  
Diffraction Patterns ◽  
Film Substrate ◽  
Substrate Temperatures

The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.

STEM and ELS Observation of Early Oxide Formation on the Surface of Cr Thin Films

1980 ◽  
Vol 38 ◽  
pp. 412-413
Author(s):  
Fumio Watari ◽  
J. M. Cowley
Keyword(s):  
Thin Films ◽  
Optical System ◽  
Room Temperature ◽  
Oxide Formation ◽  
Initial Nucleation ◽  
Diffraction Patterns ◽  
Relationship Of ◽  
Multiple Twinning ◽  
Moderately High Temperature

STEM coupled with the optical system was used for the investigation of the early oxidation on the surface of Cr. Cr thin films (30 – 1000Å) were prepared by evaporation onto the polished or air-cleaved NaCl substrates at room temperature and 45°C in a vacuum of 10−6 Torr with an evaporation speed 0.3Å/sec. Rather thick specimens (200 – 1000Å) with various preferred orientations were used for the investigation of the oxidation at moderately high temperature (600 − 1100°C). Selected area diffraction patterns in these specimens are usually very much complicated by the existence of the different kinds of oxides and their multiple twinning. The determination of the epitaxial orientation relationship of the oxides formed on the Cr surface was made possible by intensive use of the optical system and microdiffraction techniques. Prior to the formation of the known rhombohedral Cr2O3, a thin spinel oxide, probably analogous to γ -Al203 or γ -Fe203, was formed. Fig. 1a shows the distinct epitaxial growth of the spinel (001) as well as the rhombohedral (125) on the well-oriented Cr(001) surface. In the case of the Cr specimen with the (001) preferred orientation (Fig. 1b), the rings explainable by spinel structure appeared as well as the well defined epitaxial spots of the spinel (001). The microdif fraction from 20A areas (Fig. 2a) clearly shows the same pattern as Fig. Ia with the weaker oxide spots among the more intense Cr spots, indicating that the thickness of the oxide is much less than that of Cr. The rhombohedral Cr2O3 was nucleated preferably at the Cr(011) sites provided by the polycrystalline nature of the present specimens with the relation Cr2O3 (001)//Cr(011), and by further oxidation it grew into full coverage of the rest of the Cr surface with the orientation determined by the initial nucleation.

Effects of Tin Doping on the Physical Properties of Thermally Deposited Sb2S3 Thin Films

2013 ◽  
Vol 9 (4) ◽  
pp. 532-535
Author(s):  
N. Ali ◽  
W. A. A. Syed ◽  
I. Murtaza ◽  
S. T. Hussain ◽  
N. Ahmad ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties

scholarly journals Sputter Deposited Metal Layers Embedded in Composites—From Fundamentals to Applications

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 190
Author(s):  
Florian Cougnon ◽  
Mathias Kersemans ◽  
Wim Van Paepegem ◽  
Diederik Depla
Keyword(s):  
Thin Films ◽  
Heat Flux ◽  
Sputter Deposition ◽  
Image Correlation ◽  
Fiber Reinforced Polymers ◽  
Thermal Probe ◽  
Reinforced Polymers ◽  
Magnetron Sputter Deposition ◽  
Sputter Deposited ◽  
Metal Layers

Due to the low heat flux towards the substrate, magnetron sputter deposition offers the possibility to deposit thin films on heat sensitive materials such as fiber-reinforced polymers, also known as composite materials. Passive thermal probe measurements during the sputter deposition of metal layers show indeed that the temperature increase remains well below 25 °C for film thicknesses up to 600 nm. The latter thickness threshold is based on the influence of embedded metal films on the adhesion of the composite plies. Films thicker than this threshold deteriorate the mechanical integrity of the composite. The introduction of the uncured composite in the vacuum chamber strongly affects the base pressure by outgassing of impurities from the composite. The impurities affect the film properties as illustrated by their impact on the Seebeck coefficient of sputter deposited thermocouples. The restrictions to embed thin films in composites, as illustrated by both the heat flux measurements, and the study on the influence of impurities, are however not insurmountable. The possibility to use embedded thin films will be briefly demonstrated in different applications such as digital volume image correlation, thermocouples, and de-icing.

Physical properties of graphene oxide GO-doped ZnO thin films for optoelectronic application

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
M. Karyaoui ◽  
D. Ben Jemia ◽  
M. Daoudi ◽  
A. Bardaoui ◽  
A. Boukhachem ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Physical Properties ◽  
Zno Thin Films ◽  
Optoelectronic Application ◽  
Doped Zno
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