scholarly journals Miller Plateau Corrected with Displacement Currents and Its Use in Analyzing the Switching Process and Switching Loss

Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 2013
Author(s):  
Sheng Liu ◽  
Shuang Song ◽  
Ning Xie ◽  
Hai Chen ◽  
Xiaobo Wu ◽  
...  
Keyword(s):  
Relative Error ◽  
Switching Process ◽  
Constant Current ◽  
Average Relative Error ◽  
Switching Loss ◽  
Loss Model ◽  
Power Mosfet ◽  
Turn On ◽  
Displacement Currents ◽  
The Relationship

This paper reveals the relationship between the Miller plateau voltage and the displacement currents through the gate–drain capacitance (CGD) and the drain–source capacitance (CDS) in the switching process of a power transistor. The corrected turn-on Miller plateau voltage and turn-off Miller plateau voltage are different even with a constant current load. Using the proposed new Miller plateau, the turn-on and turn-off sequences can be more accurately analyzed, and the switching power loss can be more accurately predicted accordingly. Switching loss models based on the new Miller plateau have also been proposed. The experimental test result of the power MOSFET (NCE2030K) verified the relationship between the Miller plateau voltage and the displacement currents through CGD and CDS. A carefully designed verification test bench featuring a power MOSFET written in Verilog-A proved the prediction accuracy of the switching waveform and switching loss with the new proposed Miller plateau. The average relative error of the loss model using the new plateau is reduced to 1/2∼1/4 of the average relative error of the loss model using the old plateau; the proposed loss model using the new plateau, which also takes the gate current’s variation into account, further reduces the error to around 5%.

scholarly journals Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC–DC Power Converters

2016 ◽  
Vol 31 (3) ◽  
pp. 2485-2495 ◽  
Author(s):  
Ignacio Castro ◽  
Jaume Roig ◽  
Ratmir Gelagaev ◽  
Basil Vlachakis ◽  
Filip Bauwens ◽  
...  
Keyword(s):  
Power Converters ◽  
Switching Loss ◽  
Loss Model ◽  
Dc Power ◽  
Displacement Currents

The New Historicism

2018 ◽  
Author(s):  
Marjorie Levinson
Keyword(s):  
Dialectical Materialism ◽  
The Other ◽  
New Historicism ◽  
Turn On ◽  
The World ◽  
Previous Decade ◽  
Critical Turn ◽  
The Relationship

Chapter 2 studies the relationship between historicism and Romanticism. It locates the two between Enlightenment materialism, on one side, and Marxian historical and dialectical materialism, on the other. In so doing, it isolates a paradox of materialism—namely, its production of the very concepts that undo it. These include the ideas of knowing as dissociated conceptual activity, and consciousness as absolute negativity. Romanticism and historicism, it is argued, represent solutions to a common problem—a claim defended through a reading of Wordsworth’s sonnet “The world is too much with us.” In considering how we position ourselves in relation to past literature, the chapter evaluates the choices between contemplation and empathy, knowledge and power, blame and defense. As such, it represents the first move in a self-critical turn on the new historicist method that had shaped the author’s—and part of the field’s—work in the previous decade.

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Circuit Performance ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

scholarly journals The Value of Vagueness: A Feminist Analysis

2021 ◽  
Vol 34 (1) ◽  
pp. 59-84
Author(s):  
Ira Chadha-Sridhar
Keyword(s):  
Common Law ◽  
Legal Philosophy ◽  
Feminist Analysis ◽  
Turn On ◽  
The Relationship

Judicial verdicts matter. Apart from deciding the fate of litigants, common law verdicts hold precedential value. They create and alter legal cultures. Considering their importance, it is crucial to ask: what do judicial verdicts turn on? Each verdict is certainly influenced by the case facts, evidence and argumentation presented before the court. However, verdicts are also importantly shaped by how we think about language.1 Questions about language—about the relationship between words and meaning—are central to legal philosophy.

ANALYSIS OF THE ERROR IN DETERMINING THE EQUIVALENT SIZE OF A DEFECT BY THE STANDARDLESS METHOD DURING ULTRASONIC TESTING

2021 ◽  
pp. 50-57
Author(s):  
A. N. Kireev ◽  
M. A. Kireeva
Keyword(s):  
Relative Error ◽  
High Reliability ◽  
Ultrasonic Method ◽  
Experimental Studies ◽  
Standard Samples ◽  
Defect Identification ◽  
Identification Method ◽  
Maximum Value ◽  
Software Product ◽  
The Relationship

The article provides a review and analysis of the defect identification method for determining the size of discontinuities when diagnosing various machine parts and units by the manual ultrasonic method. This method makes it possible to determine the equivalent size of discontinuities of various types without using standard samples of an enterprise: point planar and volumetric; extended planar and volumetric. The method is based on the use of the relationship between the amplitude and time characteristics of the echo signal from the discontinuity and the backside signal in the object being diagnosed and the equivalent size of the discontinuity. The article presents the mathematical apparatus for the implementation of this method. Also presented is a software product that allows you to automate calculations when using this defect identification method. The article contains experimental studies of the method for determining the equivalent dimensions of discontinuities of various types, which have shown its high reliability. The maximum value of the relative error in determining the equivalent size of a point planar discontinuity was 2.867 %. The maximum value of the relative error in determining the equivalent size of a point volumetric discontinuity was 1.986 %. The maximum value of the relative error in determining the transverse equivalent size of an extended planar discontinuity was 0.667 %. The maximum value of the relative error in determining the transverse equivalent size of an extended volumetric discontinuity was 1.95 %.

Analytical loss model of power MOSFET

2006 ◽  
Vol 21 (2) ◽  
pp. 310-319 ◽  
Author(s):  
Yuancheng Ren ◽  
Ming Xu ◽  
Jinghai Zhou ◽  
F.C. Lee
Keyword(s):  
Loss Model ◽  
Power Mosfet

scholarly journals Predicting Indoor Temperature Distribution Based on Contribution Ratio of Indoor Climate (CRI) and Mobile Sensors

Buildings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 458
Author(s):  
Yanan Zhao ◽  
Zihan Zang ◽  
Weirong Zhang ◽  
Shen Wei ◽  
Yingli Xuan
Keyword(s):  
Temperature Distribution ◽  
Relative Error ◽  
Prediction Accuracy ◽  
Prediction Method ◽  
Mobile Sensors ◽  
Average Relative Error ◽  
Contribution Ratio ◽  
Mobile Sensor ◽  
Indoor Climate ◽  
Indoor Temperature

In practical building control, quickly obtaining detailed indoor temperature distribution is necessary for providing satisfying personal comfort and improving building energy efficiency. The aim of this study is to propose a fast prediction method for indoor temperature distribution without knowing the thermal boundary conditions in practical applications. In this method, the index of contribution ratio of indoor climate (CRI), which represents the independent contribution of each heat source to the temperature distribution, has been combined with the air temperature collected by one mobile sensor at the height of the working area. Based on a typical office model, the effectiveness of using mobile sensors was discussed, and the influence of its acquisition height and acquisition distance on the prediction accuracy was analyzed as well. The results showed that the proposed prediction method was effective. When the sensors fixed on the wall were used to predict the indoor temperature distribution, the maximum average relative error was 27.7%, whereas when the mobile sensor was used to replace the fixed sensors, the maximum average relative error was 4.8%. This indicates that using mobile sensors with flexible acquisition location can help promote both reliability and accuracy of temperature prediction. In the human activity area, data from a set of mobile sensors were used to predict the temperature distribution at four heights. The prediction accuracy was 2.1%, 2.1%, 2.3%, and 2.7%, respectively. However, the influence of acquisition distance of mobile sensors on prediction accuracy cannot be ignored. The distance should be large enough to disperse the distribution of the acquisition points. Due to the influence of airflow, some distance between the acquisition points and the room boundaries should be given.

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