scholarly journals Influence of Parasitic Effects in Negative Differential Resistance Characteristics of Resonant Tunneling

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 673 ◽  
Author(s):  
Chih Chin Yang
Keyword(s):  
Experimental Research ◽  
Current Density ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Electronic Circuit ◽  
Differential Resistance ◽  
Peak Current Density ◽  
Simulation And Experiment ◽  
Density Ratios ◽  
Experimental Researches

A resonant tunneling electronic circuit (RTEC) with high and multiple peak-to-valley current density ratios (PVCDRs) exhibited in the negative differential resistance (NDR) curve has been proposed in this research. The PVCDR values in simulating research and experimental research of double PVCDR RTEC were respectively reached as high as 1.79 and 22 in average, which were obtained using the designed single PVCDR RTECs structure. Also, the peak current density (PCD) values of the last NDR in the double PVCDR RTEC structure in the simulation and experiment were respectively 1.85 A and 42 µA. Triple NDR characteristics also had been obtained with the PCD values reaching as high as 2.9 A and 46 µA, respectively, in simulating and experimental researches. The PVCDR values of triple NDR characteristic were respectively 1.5 and 4.6 in the simulation and experiment.

CURRENT–VOLTAGE MEASUREMENTS WITHIN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF AlGaAs/AlGaAs TUNNEL JUNCTIONS FOR HIGH CONCENTRATION PHOTOVOLTAICS

2012 ◽  
Vol 11 (04) ◽  
pp. 1240014 ◽  
Author(s):  
GITANJALI KOLHATKAR ◽  
JEFFREY F. WHEELDON ◽  
CHRISTOPHER E. VALDIVIA ◽  
ALEXANDRE W. WALKER ◽  
SIMON FAFARD ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Negative Differential Resistance ◽  
Tunnel Junctions ◽  
Nonlinear Oscillations ◽  
Differential Resistance ◽  
Peak Current Density ◽  
Peak Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The current–voltage characteristics of AlGaAs/AlGaAs tunnel junctions for use in multi-junction solar cells are studied experimentally, where tunneling current peaks of 1100 A/cm2 and specific contact resistivities of 0.3 × 10-4Ω⋅cm2 at 7 A/cm2 (typical concentrated photovoltaic operating current) are measured. This represents an ideal tunnel junction design, with a very low resistance and one of the highest tunneling peak currents reported for solar cells. Normally, solar cell current–voltage characteristics are measured using time-averaged methods, which, in this study, reveal a tunneling peak current density of ~950 A/cm2. Due to nonlinear oscillations within the measurement circuit, the precise locations and magnitudes of the tunneling peak and valley current densities are obscured when using time-average measurement methods. Here we present an alternative method to determine the tunneling peak current density, in which the nonlinear oscillations in the current and voltage are recorded over time and a current density–voltage curve is reconstructed. This time-dependent method results in a measured tunneling peak current density of ~ 1100 A/cm2. The nonlinear oscillations of the experimental circuit are reproduced by modeling an equivalent circuit, resulting in qualitative agreement with the observed oscillations. This model predicts the capacitance and inductance of the equivalent circuit to be approximately 3 nF and 3.5 μH, respectively. This numerical model can be used to determine the inductance and the capacitance of any circuit having a negative differential resistance region.

Negative differential resistance in AlAs/NiAl/AlAs metal base quantum wells: toward a resonant tunneling transistor

1988 ◽  
Vol 35 (12) ◽  
pp. 2453-2454 ◽  
Author(s):  
N. Tabatabaie ◽  
T. Sands ◽  
J.P. Harbison ◽  
H.L. Gilchrist ◽  
V.G. Keramidas
Keyword(s):  
Quantum Wells ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Differential Resistance ◽  
Metal Base

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

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