scholarly journals The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 282
Author(s):  
Xiuxia Yang ◽  
Zhe Cheng ◽  
Zhiguo Yu ◽  
Lifang Jia ◽  
Lian Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Barrier Layer ◽  
Contact Area ◽  
Reverse Current ◽  
Schottky Barrier Diodes ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
State Resistance

AlGaN/GaN lateral Schottky barrier diodes (SBDs) with three different anode geometries (stripe, circular, and the conventional plane one) and different rows of anode trenches are fabricated and electrically characterized to study the influence of anode trench geometries. The SBDs with anode trenches exhibit the lower on-state resistance (RON) than that with the conventional plane one. It can be explained that the anode trenches made the Schottky metal directly contact to the 2DEG at the sidewall of the AlGaN/GaN interface, removing the AlGaN barrier layer in the conventional plane anode. In addition, the RON of the SBDs with circular trenches is smaller than that of the SBDs with stripe ones. Furthermore, the RON decreases with the increasing rows of anode trenches, which can be attributed to the increased contact area between the Schottky metal and the 2DEG. For the reverse characteristics, the anode trenches do not lead to performance degradation. The fabricated devices exhibit the low reverse current (IR, IR < 1 μA/mm), and the breakdown voltage (VBK) remains unchanged with different anode geometries.

Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

2006 ◽  
Vol 527-529 ◽  
pp. 1175-1178 ◽  
Author(s):  
Chiharu Ota ◽  
Johji Nishio ◽  
Tetsuo Hatakeyama ◽  
Takashi Shinohe ◽  
Kazutoshi Kojima ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
P Type ◽  
The Relationship ◽  
Unipolar Devices ◽  
Theoretical Limitation ◽  
State Resistance ◽  
Floating Layer

4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga’s Figure of Merit (BFOM) has been obtained.

Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction

2008 ◽  
Vol 600-603 ◽  
pp. 955-958
Author(s):  
Pavel A. Ivanov ◽  
Igor V. Grekhov
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Reverse Current ◽  
Differential Resistance ◽  
Avalanche Breakdown ◽  
Schottky Barrier Diodes ◽  
Boron Diffusion ◽  
Reverse Voltage ◽  
Pn Junction ◽  
Pulse Reverse

High-voltage (900 V) 4H-SiC Schottky-barrier diodes (SBD) terminated with guard pnjunction were fabricated and investigated. The guard pn-junction was formed by room temperature boron implantation followed by high temperature annealing. Owing to the transient enhanced boron diffusion during anneal, the depth of guard pn-junction is about 1.7 μm, that is approximately 1 μm deeper than the expected average range of 11B ions in 4H-SiC. The maximum reverse voltage of 4H-SiC SBD produced has been found to be limited by the avalanche breakdown in cylindrical portion of planar pn-junction. The value of the breakdown voltage of 910 V is close to theoretical one calculated for the dopant density = 2.5×1015 cm-3, n-base thickness d = 12.5 μm and junction curvature rj = 1.7 μm. Dynamic (pulse) reverse current-voltage characteristics were measured in the breakdown regime. It was found that dynamic breakdown voltage increases with shortening the pulse duration. Due to homogeneous avalanche breakdown at the edge of the quard pn-junction and high differential resistance in the breakdown regime, the diodes under test are able to withstand, with no degradation, pulse reverse voltage at least 1600 V.

Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV

2016 ◽  
Author(s):  
Keita Konishi ◽  
Ken Goto ◽  
Quang Tu Thieu ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Electrical Properties of Sc Schottky Barrier Diodes Fabricated on Argon-Ion Sputtered p-GaAs

1998 ◽  
Vol 37 (Part 2, No. 1A/B) ◽  
pp. L10-L12 ◽  
Author(s):  
Stewart A. Goodman ◽  
F. Danie Auret ◽  
Prakash N. K. Deenapanray ◽  
Gerrit Myburg
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Argon Ion

Influence of AlGaN barrier layer on the RF electric characteristics for W-Band AlGaN/GaN HEMTs

2014 ◽  
Author(s):  
Yuanjie Lv ◽  
Zhihong Feng ◽  
Shaobo Dun ◽  
Xubo Song ◽  
Xin Tan ◽  
...  
Keyword(s):  
Barrier Layer ◽  
W Band ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
Gan Hemts

Vertical β‐Ga 2 O 3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

2019 ◽  
Vol 217 (3) ◽  
pp. 1900497 ◽  
Author(s):  
Xing Lu ◽  
Xu Zhang ◽  
Huaxing Jiang ◽  
Xinbo Zou ◽  
Kei May Lau ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes ◽  
Switching Performance
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