scholarly journals Electrical Characteristics of Nanoelectromechanical Relay with Multi-Domain HfO2-Based Ferroelectric Materials

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1208
Author(s):  
Chankeun Yoon ◽  
Changhwan Shin
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Ferroelectric Material ◽  
Ferroelectric Materials ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Switching Voltage ◽  
Capacitance Effect ◽  
Voltage Variation ◽  
Polycrystalline Structures

Since the discovery of ferroelectricity in HfO2-based materials which are comparable to the complementary metal-oxide–semiconductor (CMOS) fabrication process—a negative capacitance effect in the HfO2-based materials has been actively studied. Owing to nonuniform polarization-switching (which is originated from the polycrystalline structures of HfO2-based ferroelectric materials), the formation of multi-domains in the HfO2-based materials is inevitable. In previous studies, perovskite-based ferroelectric materials (which is not compatible to CMOS fabrication process) were utilized to improve the electrical properties of a nanoelectromechanical (NEM) relay. In this study, the effects of a multi-domain HfO2-based ferroelectric material on the electrical characteristics of an NEM relay were theoretically examined. Specifically, the number of domains, domain inhomogeneity and ferroelectric thickness of the multi-domain ferroelectric material were modulated and subsequently, its corresponding results were discussed. It was observed that the switching voltage variation was decreased with increasing the number of domains and decreasing domain inhomogeneity. In addition, the switching voltage was decreased with increasing ferroelectric thickness, owing to enhanced voltage amplification.

scholarly journals Ferroelectric HfO2-based materials for next-generation ferroelectric memories

2016 ◽  
Vol 06 (02) ◽  
pp. 1630003 ◽  
Author(s):  
Zhen Fan ◽  
Jingsheng Chen ◽  
John Wang
Keyword(s):  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Ferroelectric Materials ◽  
Oxide Semiconductor ◽  
Next Generation ◽  
New Class ◽  
Generation Cost ◽  
Potential Applications ◽  
Cost Efficient ◽  
Ferroelectric Memories

Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

Etching Process Effects of CMOS Transistor Gate Manufacturing Nanotechnology Fabrication Integration

2011 ◽  
Vol 83 ◽  
pp. 91-96
Author(s):  
Chun Jen Weng
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Critical Dimension ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Gate Structure ◽  
Channel Effects ◽  
Cmos Transistor

As the nanotechnology gate is scaling down, the fabrication technology of gate spacer for CMOS transistor becomes more critical in manufacturing processes. For CMOS technologies, sidewall spacers play an important role in the control of short channel effects by offsetting ion implantation profiles from the edge of the gate. A sidewall spacer patterning technology yields critical dimension variations of minimum-sized features much smaller than that achieved by optical Complementary Metal–Oxide–Semiconductor (CMOS) fabrication processes integration. The present study is to overcome the fabrication limitations and more particularly focus on etching processes integration on structural and formation processing for complementary metal oxide semiconductor nanofabrication process on gate spacer technology and electrical characteristics performance of nanotechnology gate structure were included. Based on the investigation of the etching effect and interface film variation on the electrical characteristics of the gate oxide on etching profile and their impacts on the sidewall transistor gate structure, a novel etching integration process for optimal controlled sidewall gate spacer fabrication was developed.

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

Thermal switch design by using complementary metal–oxide semiconductor MEMS fabrication process

2011 ◽  
Vol 6 (7) ◽  
pp. 534 ◽  
Author(s):  
Jin-Chern Chiou ◽  
Lei-Chun Chou ◽  
You-Liang Lai ◽  
Ying-Zong Juang ◽  
Sheng-Chieh Huang
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Thermal Switch ◽  
Mems Fabrication ◽  
Switch Design

scholarly journals An E-Band 21-dB Variable-Gain Amplifier with 0.5-V Supply in 40-nm CMOS

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 804
Author(s):  
Gibeom Shin ◽  
Kyunghwan Kim ◽  
Kangseop Lee ◽  
Hyun-Hak Jeong ◽  
Ho-Jin Song
Keyword(s):  
Power Consumption ◽  
Frequency Band ◽  
Noise Figure ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Operating Frequency ◽  
Variable Gain Amplifier ◽  
Variable Gain ◽  
Operating Frequency Band ◽  
Shunt Capacitors

This paper presents a variable-gain amplifier (VGA) in the 68–78 GHz range. To reduce DC power consumption, the drain voltage was set to 0.5 V with competitive performance in the gain and the noise figure. High-Q shunt capacitors were employed at the gate terminal of the core transistors to move input matching points for easy matching with a compact transformer. The four stages amplifier fabricated in 40-nm bulk complementary metal oxide semiconductor (CMOS) showed a peak gain of 24.5 dB at 71.3 GHz and 3‑dB bandwidth of more than 10 GHz in 68–78 GHz range with approximately 4.8-mW power consumption per stage. Gate-bias control of the second stage in which feedback capacitances were neutralized with cross-coupled capacitors allowed us to vary the gain by around 21 dB in the operating frequency band. The noise figure was estimated to be better than 5.9 dB in the operating frequency band from the full electromagnetic (EM) simulation.

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