scholarly journals Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6287
Author(s):  
David Lumbreras ◽  
Manel Vilella ◽  
Jordi Zaragoza ◽  
Néstor Berbel ◽  
Josep Jordà ◽  
...  
Keyword(s):  
High Power ◽  
Heat Dissipation ◽  
Power Converters ◽  
Cooling System ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Power Capability ◽  
The Impact ◽  
Dissipation System

The design of a cooling system is critical in power converters based on wide-bandgap (WBG) semiconductors. The use of gallium nitride enhancement-mode high-electron-mobility transistors (GaN e-HEMTs) is particularly challenging due to their small size and high power capability. In this paper, we model, study and compare the different heat dissipation systems proposed for high power density GaN-based power converters. Two dissipation systems are analysed in detail: bottom-side dissipation using thermal vias and top-side dissipation using different thermal interface materials. The effectiveness of both dissipation techniques is analysed using MATLAB/Simulink and PLECS. Furthermore, the impact of the dissipation system on the parasitic elements of the converter is studied using advanced design systems (ADS). The experimental results of the GaN-based converters show the effectiveness of the analysed heat dissipation systems and how top-side cooled converters have the lowest parasitic inductance among the studied power converters.

scholarly journals The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 570
Author(s):  
H.Y. Wang ◽  
H.C. Chiu ◽  
W.C. Hsu ◽  
C.M. Liu ◽  
C.Y. Chuang ◽  
...  
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Heat Dissipation ◽  
Surface Defects ◽  
Lattice Mismatch ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off-state leakage current can be suppressed following an increase of the Al mole fraction due to the enhancement of the back barrier height. Increasing the AlGaN thickness deteriorated device performance because of the generation of lattice mismatch induced surface defects. The dynamic on-resistance (RON) measurements indicated that the Al mole fraction and thickness of the B.B. both affected the buffer trapping phenomenon. In addition, the thickness of B.B. also influenced the substrate heat dissipation ability which is also a key index for high power RF device applications.

GaN And Related Materials For High Power Applications

1997 ◽  
Vol 483 ◽  
Author(s):  
M. S. Shur
Keyword(s):  
Electric Fields ◽  
High Power ◽  
Heat Dissipation ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
Power Devices ◽  
Quantum Well Structures ◽  
Electron Mobility Transistors ◽  
Order Of Magnitude

AbstractUnique properties of GaN and related semiconductors make them superior for high-power applications. The maximum density of the two-dimensional electron gas at the GaN/AlGaN heterointerface or in GaN/AlGaN quantum well structures can reach 5×1013 cm−2, which is more than an order of magnitude higher than for traditional GaAs/AlGaAs heterostructures. The mobility-sheet carrier concentration product for these two dimensional systems might also exceed that for GaAs/AIGaAs heterostructures and can be further enhanced by doping the conducting channels and by using “piezoelectric” doping, which takes advantage of high piezoelectric constants of GaN and related materials. We estimate that current densities over 20 A/mm can be reached in GaN-based High Electron Mobility Transistors (HEMTs). These high current values can be combined with very high breakdown voltages in high-power HEMTs. These breakdown voltages are expected to reach several thousand volts. Recent Monte Carlo simulations point to strong ballistic and overshoot effects in GaN and related materials, which should be even more pronounced than in GaAs-based compounds but at much higher electric fields. This should allow us to achieve faster switching, minimizing the power dissipation during switching events. Selfheating, which is unavoidable in power devices, raises operating temperatures of power devices well above the ambient temperature. For GaN-based devices, the use of SiC substrates having high thermal conductivity is essential for ensuring an effective heat dissipation. Such an approach combines the best features of both GaN and SiC technologies; and GaN/SiC-based semiconductors and heterostructures should find numerous applications in power electronics.

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019 ◽  
Vol 33 (18) ◽  
pp. 1950190
Author(s):  
Hai Li Wang ◽  
Peng Yang ◽  
Kun Xu ◽  
Xiang Yang Duan ◽  
Shu Xiang Sun
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Transport Model ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Conduction Band Offset ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.

Construction of a Broad-Based Experimental and Computational Test Capability for High Power Wide Bandgap Semiconductor Devices

2007 ◽  
Author(s):  
Jason A. Carter ◽  
Matthew D. Roth ◽  
Michael W. Horgan ◽  
Lisa Shellenberger ◽  
Daniel P. Hoffmann ◽  
...  
Keyword(s):  
Thermal Stresses ◽  
High Electron Mobility Transistors ◽  
Operating Conditions ◽  
High Electron ◽  
Thermal Impedance ◽  
Analysis Model ◽  
Operational Parameters ◽  
Material Interfaces ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, the authors will discuss the development and implementation of a test stand to assess the impact of temperature on the performance of commercial X-band gallium nitride (GaN) on silicon carbide (SiC) high electron mobility transistors (HEMTs) designed for radio frequency (RF) communications platforms. The devices are tested under a range of operating temperatures and under a range of electrical operating conditions of variable gate and source-drain voltages to assess the impact of temperature on core operational parameters of the device such as channel resistance and transconductance. This test capability includes infrared thermography and transient thermal impedance measurements of the device. In addition to the experimental effort, the initial construction of a finite-volume numerical analysis model of the device will be discussed. The focus of these models will be the accurate assessment of device thermal impedance based on assumed thermal loads and eventually the assessment of accumulated thermal stresses at the material interfaces within the device and package structure.

scholarly journals Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 318 ◽  
Author(s):  
He Guan ◽  
Shaoxi Wang ◽  
Lingli Chen ◽  
Bo Gao ◽  
Ying Wang ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Electron Velocity ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Thickness ◽  
The Impact ◽  
Different Thickness

Because of the high electron mobility and electron velocity in the channel, InAs/AlSb high electron mobility transistors (HEMTs) have excellent physical properties, compared with the other traditional III-V semiconductor components, such as ultra-high cut-off frequency, very low power consumption and good noise performance. In this paper, both the structure and working principle of InAs/AlSb HEMTs were studied, the energy band distribution of the InAs/AlSb heterojunction epitaxy was analyzed, and the generation mechanism and scattering mechanism of two-dimensional electron gas (2DEG) in InAs channel were demonstrated, based on the software simulation in detail. In order to discuss the impact of different epitaxial structures on the 2DEG and electron mobility in channel, four kinds of epitaxies with different thickness of InAs channel and AlSb upper-barrier were manufactured. The samples were evaluated with the contact Hall test. It is found the sample with a channel thickness of 15 nm and upper-barrier layer of 17 nm shows a best compromised sheet carrier concentration of 2.56 × 1012 cm−2 and electron mobility of 1.81 × 104 cm2/V·s, and a low sheet resistivity of 135 Ω/□, which we considered to be the optimized thickness of channel layer and upper-barrier layer. This study is a reference to further design InAs/AlSb HEMT, by ensuring a good device performance.

Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates

2008 ◽  
Vol 600-603 ◽  
pp. 1277-1280 ◽  
Author(s):  
Yvon Cordier ◽  
Marc Portail ◽  
Sébastien Chenot ◽  
Olivier Tottereau ◽  
Marcin Zielinski ◽  
...  
Keyword(s):  
Heat Dissipation ◽  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Structural Quality ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Sic Films ◽  
Thermal Expansion Coefficient Mismatch ◽  
Interesting Alternative

Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows reducing the stress in GaN films due to both lower lattice and thermal expansion coefficient mismatch, and can provide better heat dissipation. In this work, we first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these films. Both the structural quality and the electrical behavior of these structures show the feasibility of this approach.

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