scholarly journals (E)-1-(3,4-Dimethoxyphenyl)-2-methyl-3-phenylprop-2-en-1-one: A P-Type Acid-Stable Photochromic α-Methylchalcone

Molbank ◽  
10.3390/m1226 ◽  
2021 ◽  
Vol 2021 (2) ◽  
pp. M1226
Author(s):  
Banu Öngel ◽  
Jörg M. Neudörfl ◽  
Axel G. Griesbeck
Keyword(s):  
Stationary States ◽  
Trans Conformation ◽  
Conformational Switch ◽  
Continuous Irradiation ◽  
Long Wavelength ◽  
E And Z Isomers ◽  
The Stability ◽  
P Type ◽  
Acid Stable ◽  
Wavelength Light

The α-methylated chalcone 3 with an electron-donor substituted A-aryl ring and an unsubstituted B-phenyl ring was synthesized by base-catalyzed aldehyde/acetophenone condensation. Compound 3 can be photo-switched from E→Z by irradiation with long-wavelength light λ > 350 nm, whereas irradiation with shorter wavelengths leads to photo-stationary states (PSS) with lower amounts of the Z-isomer. The limiting wavelength for fully equilibrated E⮀Z (PSS = 1) can be achieved around 240 nm. The stability of both E- and Z-isomers at the wavelength-dependent PSS under UV-irradiation between 250 and 350 nm is remarkably high as observed from UV and NMR spectroscopy. Compound 3 is fatigue resistant even after more than 10 days continuous irradiation and is also oxygenation-stable under singlet oxygen sensitization conditions. In remarkable contrast to many other α-methylated chalcones, no change in the E/Z-ratio was detected when PSS samples were treated with Broensted acids. The negative photochromic E→Z switch of 3 is accompanied by a conformational switch from the E-form in its preferred s-trans conformation to the Z-form in a distorted s-cis conformation (Es-c→Zs-t).

scholarly journals Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Ye Yu ◽  
Tao Wang ◽  
Xiufang Chen ◽  
Lidong Zhang ◽  
Yang Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Light Emitting Diodes ◽  
Nitrogen Plasma ◽  
Biaxial Stress ◽  
Organic Chemical ◽  
Graphene Surface ◽  
Light Emitting ◽  
Long Wavelength ◽  
Pre Treatment ◽  
Wavelength Light

AbstractStrain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds, which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment, and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly, graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region, which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.

scholarly journals Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 216
Author(s):  
Yongwei Li ◽  
Ting Liang ◽  
Cheng Lei ◽  
Qiang Li ◽  
Zhiqiang Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Extreme Environment ◽  
Maximum Temperature ◽  
Piezoresistive Effect ◽  
Electrical Connection ◽  
Contact Stability ◽  
The Stability ◽  
P Type

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.

Bifurcation and stability analysis of stagnation points for an asymmetric peristaltic transport

2020 ◽  
Vol 98 (2) ◽  
pp. 172-182 ◽  
Author(s):  
Kaleem Ullah ◽  
Nasir Ali
Keyword(s):  
Flow Field ◽  
Amplitude Ratio ◽  
Nonlinear Differential Equations ◽  
Global Bifurcation ◽  
Flow Region ◽  
Peristaltic Transport ◽  
Trapping Region ◽  
Long Wavelength ◽  
Stagnation Points ◽  
The Stability

This paper investigates the streamline topologies and stability of stagnation points and their bifurcations for an asymmetric peristaltic flow. The asymmetry of channel is due to the propagation of peristaltic waves with different phases and amplitudes on the flexible channel walls. An exact analytic solution of the flow problem subject to the constraints of low Reynolds number and long wavelength is obtained in wave frame of reference moving with wave velocity. A system of nonlinear differential equations is established to locate and classify the stagnation points in the flow domain. Different flow situations, manifested in the flow field, are categorized as: backward flow, trapping, and augmented flow. The transition from one situation to the other corresponds to bifurcation, which is explored graphically through local and global bifurcation diagrams. This analysis discloses the stability status of stagnation points and ranges of involved parameters in which various flow conditions appear in the flow field. It is concluded that the trapping in an asymmetric peristaltic transport can be reduced by increasing the phase difference of the channel walls. It is also found that the augmented flow region shrinks and the trapping region expands by increasing the amplitude ratio of the channel walls.

scholarly journals Modified Kawahara equation within a fractional derivative with non-singular kernel

2018 ◽  
Vol 22 (2) ◽  
pp. 789-796 ◽  
Author(s):  
Devendra Kumar ◽  
Jagdev Singh ◽  
Dumitru Baleanu
Keyword(s):  
Fractional Derivative ◽  
Numerical Solution ◽  
Water Waves ◽  
Iterative Scheme ◽  
Singular Kernel ◽  
Kawahara Equation ◽  
Long Wavelength ◽  
Exponential Kernel ◽  
The Stability ◽  
Linear Water Waves

The article addresses a time-fractional modified Kawahara equation through a fractional derivative with exponential kernel. The Kawahara equation describes the generation of non-linear water-waves in the long-wavelength regime. The numerical solution of the fractional model of modified version of Kawahara equation is derived with the help of iterative scheme and the stability of applied technique is established. In order to demonstrate the usability and effectiveness of the new fractional derivative to describe water-waves in the long-wavelength regime, numerical results are presented graphically.

First-principles identification of VI+Cui defect cluster in cuprous iodide: origin of red light photoluminescence

2022 ◽  
Author(s):  
Dingrong Liu ◽  
Zenghua Cai ◽  
Yu-Ning Wu ◽  
Shiyou Chen
Keyword(s):  
First Principles ◽  
Light Emission ◽  
Red Light ◽  
Defect Cluster ◽  
Intrinsic Point Defect ◽  
Long Wavelength ◽  
Type Semiconductor ◽  
Display Technology ◽  
Wavelength Emission ◽  
P Type

Abstract The γ-phase Cuprous Iodide (CuI) emerges as a promising transparent p-type semiconductor for next-generation display technology because of its wide direct band gap, intrinsic p-type conductivity, and high carrier mobility. Two main peaks are observed in its photoluminescence (PL). One is short wavelength (410-430 nm) emission, which is well attributed to the electronic transitions at Cu vacancy, whereas the other long wavelength emission (680-720 nm) has not been fully understood. In this paper, through first-principles simulations, we investigate the formation energies and emission line shape for various defects, and discover that the intrinsic point defect cluster V_I+Cu_i^(2+) is the source of the long wavelength emission. Our finding is further supported by the prediction that the defect concentration decreases dramatically as the chemical condition changes from Cu-rich to I-rich, explaining the significant reduction in the red light emission if CuI is annealed in abundant I environment.

Light Trapping in Thin Film Silicon n-i-p Solar Cells - Gains and Losses

2008 ◽  
Vol 1101 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Hongbo Li ◽  
Jatin K. Rath ◽  
Ronald H. Franken
Keyword(s):  
Thin Film ◽  
Light Trapping ◽  
Structural Defects ◽  
Metallic Surface ◽  
Textured Surfaces ◽  
Long Wavelength ◽  
Thin Film Silicon ◽  
Internal Surfaces ◽  
Gains And Losses ◽  
Wavelength Light

AbstractThin film silicon solar cell technology frequently makes use of rough or textured surfaces in order to enhance light absorption within the thin absorber layers by scattering and total internal reflection (“light trapping”). The rough morphology of the optically functional internal surfaces both in superstrate and substrate cells however, not only has a beneficial effect on light scattering properties, but on the other hand may also have deleterious effects on the microscopic structure of the deposited layers, in particular if these layers are nanocrystalline. The narrow valleys in the surface morphology may lead to structural defects, such as cavities and pinholes. By adjusting the morphology, these defects can be avoided.However, even when structural defects in layers directly deposited on rough interfaces are avoided, the obtained optically defined maximum current density is still much lower than expected. For instance, in n-i-p structures the rough interface (the textured back reflector consisting of nanostructured Ag coated with ZnO) is located at the back of the cell, where only long wavelength light is present. The natively textured Ag film is sputtered at elevated temperature and optimized for diffusely reflecting this long wavelength light. From experiments we infer that the nanostructured metallic surface also gives rise to plasmon absorption in the red and near IR, and that this leads to a parasitic absorption, i.e. at least part of the absorbed energy is not re-emitted to the active layers.

On the collective instability of salt fingers

1981 ◽  
Vol 110 ◽  
pp. 195-207 ◽  
Author(s):  
Judith Y. Holyer
Keyword(s):  
Prandtl Number ◽  
Internal Wave ◽  
Stability Criterion ◽  
Long Wavelength ◽  
Salt Fingers ◽  
The Stability

In this paper we consider the stability of salt fingers to long wavelength internal wave perturbations. The Prandtl number of the fluid is assumed to be large, but the ratio of the two diffusivities (KS/KT) is allowed to be any size provided that KS < KT. This problem was first considered by Stern (1969), where several untested assumptions were made about the motion. Here we use a two-scale approach to separate the salt finger motions from the long-scale internal wave perturbations and to obtain the stability criterion. This collective instability of salt fingers succeeds in transferring energy from the small salt finger scales to the long internal wave scales.

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