Preliminary Study on Highly Efficient Polishing of 4H-SiC by Utilization of Anodic Oxidation

2014 ◽  
Vol 1017 ◽  
pp. 509-514 ◽  
Author(s):  
Kazuya Yamamura ◽  
Kenji Hosoya ◽  
Yusuke Imanishi ◽  
Hui Deng ◽  
Katsuyoshi Endo
Keyword(s):  
Surface Roughness ◽  
Phosphoric Acid ◽  
Single Crystal ◽  
Anodic Oxidation ◽  
Chemical Mechanical Polishing ◽  
Oxidation Rate ◽  
Removal Rate ◽  
Experimental Results ◽  
Single Crystal Sic ◽  
Preliminary Study

Preliminary study on anodic-oxidation-assisted polishing (AOAP) of 4H-SiC (0001) using ceria polishing film was demonstrated. In the case of using deionized (DI) water as an electrolyte, rms roughness of 0.16 nm was obtained, which is almost the same as roughness of the surface finished by conventional chemical mechanical polishing (CMP). However, the polishing rate was very low and was 23 nm/h. In contrast, the polishing rate of 0.84 μm/h, which is equal to that of conventional CMP of single-crystal SiC or greater, was obtained when we used 1 wt% of phosphoric acid (H3PO4) as the electrolyte, although the surface roughness increased to rms roughness of 1 nm order. These experimental results indicate that the polishing rate greatly depends on the oxidation rate of anodic oxidation and the balance between the oxidation rate and the removal rate of oxide by abrasive greatly affects the roughness of the processed surface.

scholarly journals Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2022 ◽  
Author(s):  
Yong Hu ◽  
Dong Shi ◽  
Ye Hu ◽  
Hongwei Zhao ◽  
Xingdong Sun
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Generation ◽  
Ultrasonic Assisted ◽  
Single Crystal Sic ◽  
Sic Wafer

A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.

scholarly journals A Review on Precision Polishing Technology of Single-Crystal SiC

Crystals ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 101
Author(s):  
Gaoling Ma ◽  
Shujuan Li ◽  
Feilong Liu ◽  
Chen Zhang ◽  
Zhen Jia ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Chemical Mechanical Polishing ◽  
Surface Defects ◽  
Waste Treatment ◽  
Removal Rate ◽  
Research Direction ◽  
Mechanical Polishing ◽  
Neutral Salt ◽  
Single Crystal Sic

Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

Anisotropic Lapping of Single Crystal Sapphire

2010 ◽  
Vol 102-104 ◽  
pp. 502-505
Author(s):  
Ping Zhou ◽  
Peng Fei Gao ◽  
Wei Fang Wang ◽  
Dong Hui Wen
Keyword(s):  
Fracture Toughness ◽  
Surface Roughness ◽  
Elastic Modulus ◽  
Single Crystal ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Surface Orientation ◽  
Experimental Results ◽  
Single Crystal Sapphire

Lapping processes of single crystal sapphire are investigated in relation to crystallo- graphic orientation, the influence of the crystal anisotropism under different lapping liquid concentration, loading forces on materials removal rate and roughness in sapphire lapping is discussed. C-plane(0001),M-plane ( ),R-plane ( ),A-plane ( ) sapphire wafers were used for lapping experiments, experimental results show that Surface roughness is depend on the fracture toughness, surface orientation with higher fracture toughness such as C-plane would get better roughness during lapping, material removal rate of R-plane is the lowest in four planes, it is for elastic modulus and fracture toughness of R-plane are less than other three planes.

Consideration of Femtosecond Laser-Induced Effect on Semiconductor Material SiC Substrate for CMP Processing

2015 ◽  
Vol 799-800 ◽  
pp. 458-462
Author(s):  
Cheng Wu Wang ◽  
Syuhei Kurokawa ◽  
Toshiro Doi ◽  
Yasuhisa Sano ◽  
Hideo Aida ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Femtosecond Laser ◽  
Surface Morphology ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Lower Surface ◽  
Before And After ◽  
Single Crystal Sic ◽  
Sic Wafer

In this paper, lapped C-face of single crystal SiC wafer was irradiated by femtosecond laser. Chemical mechanical polishing (CMP) was then carried out to polish the irradiated SiC C-face. The authors compared the results of femtosecond laser-assisted CMP process. A white-light interferometer was used to investigate the surface morphology of the processed SiC substrate before and after laser irradiation. It was found that the material removal rate (MRR) of the irradiated substrate is about 3 times higher than that of the substrate not treated by femtosecond laser. In addition, lower surface roughness was realized after femtosecond laser assisted CMP process.

Mechanochemical Polishing of Single Crystal Diamond with Mixture of Oxidizing Agents

2006 ◽  
Vol 315-316 ◽  
pp. 852-855 ◽  
Author(s):  
Cheng Yong Wang ◽  
C. Chen ◽  
Yue Xian Song
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Smooth Surface ◽  
Removal Rate ◽  
Polishing Process ◽  
Iron Plate ◽  
Oxidizing Agents ◽  
Single Crystal Diamond ◽  
Lower Temperature ◽  
And Control

In order to achieve the smooth surface of diamond, several kinds of mixture oxidizing agents have been used to polish the single crystal diamond by a designed polishing apparatus. The existing of graphite and amorphous carbon has been found in the surface of diamond after polishing. The mechanochemical actions of oxidizing agents and the polishing iron plate have been proved. The mixture of oxidizing agents can decrease the polishing temperature so that the super-smooth surface of single crystal diamond can be achieved at lower temperature. The method provided is benefit not only to simplify polishing device and control the polishing process, but also to improve the removal rate and surface roughness.

Study on the Machining Parameters in Polishing Single-Crystal SiC Wafers with SG Films

2013 ◽  
Vol 589-590 ◽  
pp. 457-463 ◽  
Author(s):  
Zhi Du ◽  
Jing Lu ◽  
Cong Fu Fang ◽  
Hui Huang ◽  
Xi Peng Xu
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Smooth Surface ◽  
Sol Gel ◽  
Machining Parameters ◽  
Processing Quality ◽  
Rotating Speed ◽  
Single Crystal Sic ◽  
Sic Wafer ◽  
Diamond Abrasive

In this paper, diamond abrasive SG films were prepared by means of sol-gel technology for polishing single-crystal SiC wafers. The effects of machining parameters on processing quality including pressure, rotating speed and polishing time were investigated, respectively. The results indicated that the surface roughness decreased with increasing polishing time. While for pressure and rotating speed, there were inflections existing. Polishing SiC wafer under optimized machining parameters, an ultra smooth surface with the roughness of 3.7 nm could be achieved using 40 μm diamond grits.

Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive

2013 ◽  
Vol 797 ◽  
pp. 261-265 ◽  
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Rotational Velocity ◽  
Crystal Substrate ◽  
Polishing Pressure ◽  
Diamond Abrasive ◽  
Abrasive Size

In this paper, according to the slurry ingredients obtained by former research, the influences of the chemical mechanical polishing (CMP) process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR) and surface roughness Ra have been studied in CMP SiC crystal substrate (0001) C and (0001) Si surface based on the diamond abrasive. The research results show that the material removal rate changes with the change of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly, but the maximum of MRR can be obtained at a certain rotational velocity of platen, abrasive size and polishing pressure. The influence of the abrasive size, the platen velocity, the carrier velocity and the polishing pressure on surface roughness is no significant. Under the same conditions, the MRR of CMP the Si surface is larger than that of the C surface. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP SiC crystal substrate.

Research on CMP Characteristics Attribute to Groove Size

2011 ◽  
Vol 189-193 ◽  
pp. 4112-4115 ◽  
Author(s):  
Yong Chang Guo ◽  
Young Kyun Lee ◽  
Hyun Seop Lee ◽  
Hae Do Jeong
Keyword(s):  
Size Effect ◽  
Friction Force ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Experimental Results ◽  
Groove Width ◽  
Significant Difference

Groove pads are used quite widely in chemical mechanical polishing (CMP), and groove size plays an important role in CMP characteristics. This study focuses on the investigation of the groove size effect using X-Y groove pads which are different with pitch and width. The first experiment shows the size effect on the polishing characteristics including material removal rate (MRR), within wafer non-uniformity (WIWNU) on 4 inch oxide blanket wafers for 60 seconds. The second experiment verifies the reason why MRR and WIWNU are different, by the calculation of slurry duration time (SDT) resulting from the change of friction force. All experimental results indicated that a significant difference of slurry flow attributed to groove width and pitch has an impressive influence on friction force, finally the MRR and WIWNU are affected by the groove size.

Analysis on the Influence of Oxidant in CMP of Ultra-Thin Stainless Steel

2014 ◽  
Vol 1027 ◽  
pp. 167-170 ◽  
Author(s):  
Jian Xiu Su ◽  
Jia Peng Chen ◽  
Hai Feng Cheng ◽  
Song Zhan Fan
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
304 Stainless Steel ◽  
Research Results

In chemical mechanical polishing (CMP) of ultra-thin stainless steel, the oxidant of polishing slurry determines the material removal rate (MRR). In this paper, the influences of oxidant in slurry on MRR and surface roughness have been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive. The research results show that, in the same conditions, the MRR increases with the increase of the oxidant C and the oxidant B, the MRR decreases with the increase of the oxidant A and the MRR is max with the oxidant C. It indicated that the oxidant C has a large effect on MRR in CMP of the 304 stainless steel. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.

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