scholarly journals Fabrication of (111)-Oriented Nanotwinned Au Films for Au-to-Au Direct Bonding

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2287 ◽  
Author(s):  
John Wu ◽  
Chih-Yang Huang ◽  
Wen-Wei Wu ◽  
Chih Chen
Keyword(s):  
Reverse Current ◽  
Preferred Orientation ◽  
X Ray Diffraction ◽  
Shear Tests ◽  
Adhesion Layer ◽  
Current Time ◽  
Bonding Quality ◽  
X Ray ◽  
Substrate Adhesion ◽  
Deposited Films

We reported that highly (111)-oriented nanotwinned gold can be fabricated by periodical-reverse electroplating. The as-deposited films are shown to have a strong (111) preferred orientation, increasing with the reverse current time. The ratios of I(111)/I(220) and I(111)/I(200) in X-ray diffraction signals indicates a strong (111) preferred orientation. Using the advantage of the fast surface diffusion of (111) plane compared to the other planes of gold, we performed direct bonding with different thicknesses. Grain growth was observed over two films’ interfaces to eliminate the bonding interface, when annealed at 250 °C for 1 h. Shear tests were performed to gain insight on the bonding quality. All the chips failed at either the silicon substrate or substrate-adhesion layer, showing possible higher strength than the tested maximum, 40.8 MPa.

NbN Thin Film of Alternating Textures

2017 ◽  
Vol 898 ◽  
pp. 1431-1437
Author(s):  
Hong Yang Shao ◽  
Kan Zhang ◽  
Yi Dan Zhang ◽  
Mao Wen ◽  
Wei Tao Zheng
Keyword(s):  
Deposition Time ◽  
Peak Position ◽  
Preferred Orientation ◽  
Intrinsic Stress ◽  
Competitive Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Orientation Distributions ◽  
Different Thickness ◽  
Deposited Films

The δ-NbN thin films with different thickness have been prepared by reactive magnetron sputtering at different deposition time and exhibited alternating textures between (111) and (200) orientations as a function of thickness. In addition, the grain size, peak position, morphology, residual stress and orientation distributions of the deposited films were explored by X-ray diffraction, low-angel X-ray reflectivity, scanning electron microscopy and surface profiler. The film deposited at 300 s showed a (111) preferred orientation, changing to (200) preferred orientation at 600 s, and exhibited alternating textures between (111) and (200) preferred orientations. With further increasing deposition time, in which (200) peak position and the full width at half maximum of (111) peak also displayed a trend of alternating variation with varying deposition time. The intrinsic stress for δ-NbN films calculated by Stoney equation alternately changed with alternating textures, in which (111) orientation always takes place at relatively high intrinsic stress state and vice versa. Meanwhile, the film with (111) preferred orientation showed higher density than (200) preferred orientation. The film deposited at 4800 s owned a mixed texture of (111) and (200), showing an anisotropy distribution of (111)-oriented and (200)-oriented grains, while film deposited at 7200 s owned a strong (200) texture, displaying an isotropy distribution of (200)-oriented grains. The competitive growth between (111)-oriented and (200)-oriented grains was responsibility for alternating texture.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

Template Synthesis of Indium Nanowires Using Anodic Aluminum Oxide Membranes

2008 ◽  
Vol 8 (9) ◽  
pp. 4488-4493 ◽  
Author(s):  
Feng Chen ◽  
Adrian H. Kitai
Keyword(s):  
Aluminum Oxide ◽  
Template Synthesis ◽  
Anodic Aluminum Oxide ◽  
Preferred Orientation ◽  
Hydraulic Pressure ◽  
X Ray Diffraction ◽  
Aao Template ◽  
X Ray ◽  
Anodic Aluminum ◽  
Oxide Membranes

Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire ∼60 μm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

X-Ray Reflectivity Studies of Pt/AlN Multilayered Films

2007 ◽  
Vol 561-565 ◽  
pp. 2095-2098
Author(s):  
Takashi Harumoto ◽  
Ji Shi ◽  
Yoshio Nakamura
Keyword(s):  
Layer Structure ◽  
Bragg Reflection ◽  
X Ray Diffraction ◽  
Multilayered Films ◽  
Sputtering Deposition ◽  
X Ray ◽  
First Order ◽  
Periodic Layer ◽  
Deposited Films ◽  
Very High

Pt/AlN multilayered films fabricated by alternative sputtering deposition were characterized by X-Ray Reflectometry and X-Ray Diffraction. As-deposited films have (111) and (001) preferred orientation for Pt and AlN, respectively. The X-Ray Reflectivity profiles are assigned to the total reflection and Bragg reflections due to periodic layer structure. The Bragg peaks are observed at the 2Theta range beyond 15 degree and the peak intensities increase after annealing. The reflectivity of the first order Bragg reflection is approximately 65% and is stable after annealing at 873K. Simulation of the reflectivity profile has shown roughnesses of the Pt/AlN interfaces are below 0.4nm. X-Ray Diffraction revealed the development of film texture and formation of superlattice by annealing. The latter indicates periodicity of film is very high.

Study on the phase structure and mechanical properties of (Ti,Al,Si)N coatings deposited by multiarc ion plating

2019 ◽  
Vol 34 (01n03) ◽  
pp. 2040043
Author(s):  
Mengchao Wang ◽  
Lijun Wang ◽  
Hui Chen ◽  
Yinfen Cheng
Keyword(s):  
Cross Sections ◽  
Phase Structure ◽  
Structural Formula ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Plating ◽  
Substrate Adhesion ◽  
Scratch Tests ◽  
Angular Shift

Different structural [Formula: see text] coatings were designed and deposited on WC-Co cemented carbide by the technology of multiarc ion plating. Monolayered [Formula: see text] coating was deposited using cathode of [Formula: see text]. Multilayered (Ti,Al)N/[Formula: see text] coating and [Formula: see text] coating with gradual silicon content were deposited using two cathodes of [Formula: see text] and [Formula: see text] simultaneously. The surface and cross-section morphology, compositions, and phase structure were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The dense [Formula: see text] coatings with droplets on the surface and without obvious columnar structure on the cross-sections were obtained. All coatings had the strong peaks of (200) orientation. The different angular shift occurred with different combination of cathodes and processes. The introduction of multilayered and gradient structure effectively reduced the lattice distortion of coatings. Meanwhile, the coating-substrate adhesion strength increased from 38.57 N to 60.17 N with a coating thickness of approximately 3.5 [Formula: see text]m by scratch tests. The highest hardness of [Formula: see text] coating obtained in this paper were [Formula: see text] GPa by nanoindentation. The multilayered coating showed better toughness.

scholarly journals The changing of silicon suboxide film thickness as a result of high temperature annealing

2019 ◽  
Vol 196 ◽  
pp. 00053
Author(s):  
Alexandr Zamchiy ◽  
Evgeniy Baranov
Keyword(s):  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
Flow Rates ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Suboxide ◽  
Deposited Films ◽  
Electron Beam Plasma

The a-SiOx:H thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method with different stoichiometry (x=0.15-1.0) for different SiH4 flow rates. The concentration of hydrogen in the films increases with the growth rate in ranges from 1.5 to 4.8 at.%. Further annealing leads to the effusion of hydrogen from the structure of the material and the compression of the structure, which leads to a reduction in the thickness for all films. X-ray diffraction measurements showed that the as-deposited films crystallized to form nc-Si about 4-8 nm in size after annealing at 1000°C.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

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