scholarly journals Microstructure and Properties of PZT Films with Different PbO Content—Ionic Mechanism of Built-In Fields Formation

Materials ◽  
2019 ◽  
Vol 12 (18) ◽  
pp. 2926 ◽  
Author(s):  
Nikolay Mukhin ◽  
Dmitry Chigirev ◽  
Liubov Bakhchova ◽  
Andrey Tumarkin
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Oxide ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Experimental Studies ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Heterophase Structure ◽  
Pzt Films ◽  
A Charge

Experimental studies were conducted on the effects of lead oxide on the microstructure and the ferroelectric properties of lead zirconate-titanate (PZT) films obtained by the method of radio frequency (RF) magnetron sputtering of a ceramic PZT target and PbO2 powder with subsequent heat treatment. It is shown that the change in ferroelectric properties of polycrystalline PZT films is attributable to their heterophase structure with impurities of lead oxide. It is also shown that, even in the original stoichiometric PZT film, under certain conditions (temperature above 580 °C, duration greater than 70 min), impurities of lead oxide may be formed. The presence of a sublayer of lead oxide leads to a denser formation of crystallization centers of the perovskite phase, resulting in a reduction of the grain size as well as the emergence of a charge on the lower interface. The formation of the perovskite structure under high-temperature annealing is accompanied by the diffusion of lead into the surface of the film. Also shown is the effect of the lead ions segregation on the formation of the self-polarized state of thin PZT films.

Effect of Pb Content on the Fatigue Properties of D.C. Reactive Sputtering-Derived PZT Thin Films

2006 ◽  
Vol 326-328 ◽  
pp. 613-616
Author(s):  
Dae Jin Yang ◽  
Seong Je Cho ◽  
Jong Oh Kim ◽  
Won Youl Choi
Keyword(s):  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Reactive Sputtering ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Pzt Thin Films ◽  
Pzt Films

Lead zirconate titanate (Pb(Zr0.48Ti0.52)O3 or PZT) films were grown on platinized silicon wafers (Pt/SiO2/Si) by d.c. reactive sputtering method with multi targets. The Pb content of PZT films has been widely recognized as affecting not only the phase formation and microstructure but also the dielectric and ferroelectric properties. Pb content of PZT films was controlled by the variation of Pb target current. The relation between Pb content and Pb target current was expressed as y=0.89x-11.09. The x and y are Pb target current and Pb content, respectively. The pyrochlore phase was transformed to perovskite phase as Pb content was increased. This phase transformation improved the ferroelectric properties of PZT films. In PZT films with perovskite phase, fatigue properties were not improved with excess Pb content. Fatigue properties of PZT films began to be fatigued after 106 switching cycles and coincided with the typical PZT fatigue behavior. Excess Pb content (Pb vacancy) did not affect the fatigue properties of PZT films.

Effect of Pb Excess Content on Microstructure and Electrical Properties of Sol Gel Derived PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
Zhan-jie Wang ◽  
Ryutaro Maeda ◽  
Kaoru Kikuchi
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Starting Solution ◽  
Pzt Films

AbstractLead zirconate titanate (PZT) thin films were fabricated by a three-step heat-treatment process which involves the addition of -10, 0 and 10 mol% excess Pb to the starting solution and spin coating onto Pt/Ti/SiO2/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron probe microanalysis (EPMA), respectively. The well-crystallized perovskite phase and the (100) preferred orientation were obtained by adding 10% excess Pb to the starting solution. It was found that PZT films to which 10% excess Pb was added had better electric properties. The remanent polarization and the coercive field of this film were 34.8 μC/cm2 and 41.7 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1600 and 0.04, respectively. Dielectric and ferroelectric properties were correlated to the microstructure of the films.

scholarly journals Effect of Ni/Nb on structure, electrical and ferroelectric properties of 0.5PNN-0.5PZT ceramics

2015 ◽  
Vol 9 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Rashmi Gupta ◽  
Seema Verma ◽  
Deepa Singh ◽  
Karan Singh ◽  
Krishen Bamzai
Keyword(s):  
Grain Size ◽  
Dielectric Relaxation ◽  
Lead Zirconate Titanate ◽  
Remnant Polarization ◽  
Inverse Relationship ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Cole Plot ◽  
Conventional Solid State Reaction

The solid solutions of lead nickel niobate (PNN) and lead zirconate titanate (PZT), with general formula 0.5 Pb(NixNb1-x)O3-0.5 PZT, where x = 1/3, 1/2 and 2/3 and Zr/Ti = 50/50, were prepared by conventional solid state reaction technique. The perovskite phase formation and morphology were examined by powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. From microstructure investigations, the grain size was found to lie in the range of 0.2-1.1 ?m. Diffuse phase transition and dielectric relaxation was obtained for all three compositions. The nature of dielectric relaxation was investigated through complex plane Argand plot or Cole-Cole plot. It was found that both grains as well as grain boundary contribute to dielectric relaxation. A direct correlation between the grain size and electrical properties was obtained. The remnant polarization and grain size were found to follow the inverse relationship. The inverse relationship between remnant polarization and grain size was established.

Stress Characterization of Sputtered PZT Films

1997 ◽  
Vol 505 ◽  
Author(s):  
M. J. Mescher ◽  
M. L. Reed ◽  
T. E. Schlesinger
Keyword(s):  
Lead Zirconate Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Film Stress ◽  
Intrinsic Stress ◽  
Composite Target ◽  
Fluorescence Measurements ◽  
Wide Range ◽  
Pzt Films ◽  
Sputter Deposited

ABSTRACTIn this work we show that stress in sputter deposited lead zirconate titanate (PZT) films can be controlled by variation of both deposition and annealing temperatures. These films were deposited via reactive rf magnetron sputtering using a Pb1.25Zr. 52Ti. 48 03 composite target and 02 as a reactive gas in an Ar ambient. Variation of stress as a function of deposition and annealing temperature was characterized. The deposited film composition was determined from x-ray fluorescence measurements. There is a strong correlation between film stress, composition, and crystallographic orientation. Stress was determined from the deflection of released SiO 2/Pt cantilever beams. We show that films with a wide range of intrinsic stress can be deposited which still exhibit good piezoelectric properties, making the fabrication of reliable thin film piezoelectric actuators possible.

Effect of Barium Titanate Additives on Dielectric Property of PLZT Ceramics

2015 ◽  
Vol 804 ◽  
pp. 21-24
Author(s):  
Ladapak Chumprasert ◽  
Narit Funsueb ◽  
Apichart Limpichaipanit ◽  
Athipong Ngamjarurojana
Keyword(s):  
Barium Titanate ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Dielectric Behavior ◽  
Rhombohedral Structure ◽  
Soaking Time ◽  
Oxide Powders ◽  
Formation And Evolution

Barium titanate (BT) additive in lanthanum modified lead zirconate titanate (PLZT) was used to modify the microstructure and resultant properties of (1-x) PLZT– x BT where x= 0, 0.05, 0.10, 0.15, 0.20 and 0.25. Oxide powders were synthesized by mixed oxide synthetic route via a rapid vibro-milling technique. All of samples were sintered at 1275°C with the soaking time of 4 h. The ceramic samples were investigated for phase formation and evolution, dielectric behavior and ferroelectric properties. Introduction of BT in PLZT lattice resulted in ferroelectric tetragonal-rhombohedral structure, and further increase of BT content resulted in stabilizing the ferroelectric tetragonal perovskite phase. Dielectric behavior and ferroelectric properties were examined as a function of BT content.

scholarly journals Perovskite phase formation and ferroelectric properties of the lead nickel niobate–lead zinc niobate–lead zirconate titanate ternary system

2003 ◽  
Vol 18 (12) ◽  
pp. 2882-2889 ◽  
Author(s):  
Naratip Vittayakorn ◽  
Gobwute Rujijanagul ◽  
Tawee Tunkasiri ◽  
Xiaoli Tan ◽  
David P. Cann
Keyword(s):  
Ternary System ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Lead Zinc Niobate ◽  
Lead Zinc ◽  
Lead Nickel

The ternary system of lead nickel niobate Pb(Ni1/3Nb2/3)O3 (PNN), lead zinc niobate Pb(Zn1/3Nb2/3)O3 (PZN), and lead zirconate titanate Pb(Zr1/2Ti1/2)O3 (PZT) was investigated to determine the influence of different solid state processing conditions on dielectric and ferroelectric properties. The ceramic materials were characterized using x-ray diffraction, dielectric measurements, and hysteresis measurements. To stabilize the perovskite phase, the columbite route was utilized with a double crucible technique and excess PbO. The phase-pure perovskite phase of PNN–PZN–PZT ceramics was obtained over a wide compositional range. It was observed that for the ternary system 0.5PNN–(0.5 - x)PZN–xPZT, the change in the transition temperature (Tm) is approximately linear with respect to the PZT content in the range x [H11505] 0 to 0.5. With an increase in x, Tm shifts up to high temperatures. Examination of the remanent polarization (Pr) revealed a significant increase with increasing x. In addition, the relative permittivity ([H9280]r) increased as a function of x. The highest permittivities ([H9280]r [H11505] 22,000) and the highest remanent polarization (Pr [H11505] 25 μC/cm2) were recorded for the binary composition 0.5Pb(Ni1/3Nb2/3)O3–0.5Pb(Zr1/2Ti1/2)O3.

The effect of oxygen partial pressure during cooling on lead zirconate titanate thin film growth by using rf magnetron sputtering method

1998 ◽  
Vol 13 (12) ◽  
pp. 3442-3448 ◽  
Author(s):  
Dong Joo Kim ◽  
Tae Song Kim ◽  
Jeon Kook Lee ◽  
Hyung Jin Jung
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Lead Zirconate Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Grain Distribution

The lead zirconate titanate (PZT) thin film was deposited on platinized silicon wafer substrate by the rf magnetron sputtering method. In order to investigate the effect of cooling ambient, oxygen partial pressure was controlled during cooling PZT films. The PZT films cooled at lower oxygen partial pressure had perovskite phase and pyrochlore phase in both as-grown and postannealed films, but in the PZT films cooled at higher oxygen partial pressure, pyrochlore phases were not detected by XRD. As the oxygen partial pressure became lower during cooling, the capacitors had low values of remanent polarization and coercive field for as-grown films. The PZT capacitor with such a low value was recovered by postannealing in air, but its electrical properties had the same tendency before and after annealing. Microstructure was also affected by cooling ambient. Higher oxygen partial pressure on cooling reduced the number of very fine grains, and enhanced uniform grain distribution. Fatigue characteristics were also enhanced by cooling at higher oxygen partial pressure. However, the imprint was negligible irrespective of oxygen partial pressure upon cooling. The cooling procedure at higher oxygen ambients is believed to reduce the amounts of nonferroelectric second phases and oxygen vacancies. We find that oxygen partial pressure during cooling is a considerable process parameter. Therefore, care should be taken in treating the parameter after depositing films.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

Raman analysis of microcircuits with lead zirconate titanate (PZT) films

1992 ◽  
Vol 50 (2) ◽  
pp. 1688-1689
Author(s):  
D. R. Tallant ◽  
R. W. Schwartz ◽  
B. A. Tuttle ◽  
S. C. Everist ◽  
B. C. Tafoya
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Solution Chemistry ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
High Temperature Processing

Certain compositions and structural forms of lead zirconate titanate (PZT) materials have potential applications in microelectronics because of their ferroelectric properties. One such application is in the development of new types of non-volatile memories. PZT films are integrated into microcircuit components using sol-gel deposition techniques. The solution chemistry effects attendant to different sol-gel preparation procedures have been investigated by several researchers.We have used Raman spectroscopy both to characterize the metallo-organic species initially laid down on macroscopic platinum substrates during sol-gel processing and to follow the evolution of Pb-Zr-Ti oxide species through high temperature processing. The high temperature processing removes residual organics and creates Pb-Zr-Ti oxide structures that have ferroelectric properties. Low temperature pyrochlore structures, which are not ferroelectric, can be distinguished by Raman spectroscopy from tetragonal and pseudo-cubic/rhombohedral perovskite structures, which are usefully ferroelectric (Top Figure). In addition Raman spectroscopy has identified lead and titanium oxides that form as intermediates in the high temperature crystallization of ferroelectric PZT structures.

Orientation Dependence of Strontium-doped Lead Zirconate Titanate (PSZT) Thin Films on RF Magnetron Sputtering Conditions

2006 ◽  
Vol 928 ◽  
Author(s):  
Sharath Sriram ◽  
Madhu Bhaskaran ◽  
Anthony Stephen Holland ◽  
Geoffrey K Reeves
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cooling Rate ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Orientation Dependence ◽  
Grain Structure ◽  
Zirconate Titanate

ABSTRACTStudies on strontium-doped lead zirconate titanate (PSZT) have been reported for its high piezoelectric and ferroelectric properties. For PSZT to exhibit pronounced piezoelectric behaviour it must have a crystalline grain structure (perovskite orientation). This paper is a study of the deposition of PSZT thin films by RF magnetron sputtering and the effect of cooling rate, after deposition at temperatures between 500 °C and 700 °C. X-Ray Diffraction (XRD) results are used to show how a cooling rate of 5 °C/min increases the degree of perovskite orientation in sputtered films, when compared to a cooling rate of 15 °C/min. The absence of significant shifts in the positions of diffraction peak patterns in XRD results are used to demonstrate low stress in the deposited films. Atomic Force Microscope (AFM) imaging is used to show the crystalline nature of the PSZT thin films.

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