scholarly journals Thermoelectric Properties of n-Type Molybdenum Disulfide (MoS2) Thin Film by Using a Simple Measurement Method

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3521 ◽  
Author(s):  
Ashraf ◽  
Forsberg ◽  
Mattsson ◽  
Thungström
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Molybdenum Disulfide ◽  
Thermoelectric Properties ◽  
Temperature Difference ◽  
Measurement Method ◽  
Figure Of Merit ◽  
Coefficient Measurement ◽  
Simple Measurement

In this paper, a micrometre thin film of molybdenum disulfide (MoS2) is characterized for thermoelectric properties. The sample was prepared through mechanical exfoliation of a molybdenite crystal. The Seebeck coefficient measurement was performed by generating a temperature gradient across the sample and recording the induced electrical voltage, and for this purpose a simple measurement setup was developed. In the measurement, platinum was utilized as reference material in the electrodes. The Seebeck value of MoS2 was estimated to be approximately −600 µV/K at a temperature difference of 40 °C. The negative sign indicates that the polarity of the material is n-type. For measurement of the thermal conductivity, the sample was sandwiched between the heat source and the heat sink, and a steady-state power of 1.42 W was provided while monitoring the temperature difference across the sample. Based on Fourier’s law of conduction, the thermal conductivity of the sample was estimated to be approximately 0.26 Wm-1 K-1. The electrical resistivity was estimated to be 29 Ω cm. The figure of merit of MoS2 was estimated to be 1.99 × 10-4.

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

Improved thermoelectric properties of gadolinium intercalated compounds GdxTiS2 at the temperaturesfrom 5 to 310 K

2006 ◽  
Vol 21 (2) ◽  
pp. 480-483 ◽  
Author(s):  
D. Li ◽  
X.Y. Qin ◽  
J. Zhang
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Substantial Decrease ◽  
Intercalated Compounds

The thermoelectric properties of Gd intercalated compounds GdxTiS2 have been investigated at the temperatures from 5 to 310 K. The results indicate that Gd intercalation into TiS2 leads to substantial decrease of both its electrical resistivity and its lattice thermal conductivity κL (κL is lowered by 20% and 46% at 300 K for x = 0.025 and 0.05, respectively). Specially, as compared to the pristine TiS2 the figure of merit ZT of the intercalated compound GdxTiS2 has been improved at all temperatures investigated, and specifically, the ZT value of Gd0.05TiS2 at 300 K is about three times as large as that of TiS2.

Effect of Oxygen Content on Thermoelectric Properties of Sintered Bi-Te Based Compounds

2004 ◽  
Vol 449-452 ◽  
pp. 905-908 ◽  
Author(s):  
Dong Choul Cho ◽  
Cheol Ho Lim ◽  
D.M. Lee ◽  
Seung Y. Shin ◽  
Chung Hyo Lee
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Oxygen Content ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Air Atmosphere ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Effect Of Oxygen

The n-type thermoelectric materials of Bi2Te2.7Se0.3 doped with SbI3 were prepared by spark plasma sintering technique. The powders were ball-milled in an argon and air atmosphere. Then, powders were reduced in H2 atmosphere. Effects of oxygen content on the thermoelectric properties of Bi2Te2.7Se0.3 compounds have been investigated. Seebeck coefficient, electrical resistivity and thermal conductivity of the sintered compound were measured at room temperature. It was found that the effect of atmosphere during the powder production was remarkable and thermoelectric properties of sintered compound were remarkably improved by H2 reduction of starting powder. The obtained maximum figure of merit was 2.4 x 10-3/K.

Thermoelectric properties of Li-doped Cu0.95-xM0.05LixO (M=Mn, Ni, Zn)

2012 ◽  
Vol 1490 ◽  
pp. 69-73
Author(s):  
N. Yoshida ◽  
T. Naito ◽  
H. Fujishiro
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Metal Ion ◽  
Figure Of Merit ◽  
Divalent Metal ◽  
Thermoelectric Figure Of Merit ◽  
Divalent Metal Ions ◽  
Thermoelectric Figure ◽  
Divalent Metal Ion

ABSTRACTThermoelectric properties of the Li-doped Cu0.95-xM0.05LixO (M=divalent metal ion; Mn, Ni, Zn) were investigated at the temperature up to 1273 K. In the doped divalent metal ions, Zn2+ ion was the most effective to reduce the thermal conductivity, and the Ni2+ substitution was preferable to decrease the electrical resistivity. For the Cu0.95-xNi0.05LixO sample at x=0.03, the maxima of the dimensionless thermoelectric figure of merit ZT and the power factor P at 1246 K were 4.2×10-2 and 1.6 ×10-4 W/K2m, respectively. The enhancement of the thermoelectric properties of the Li-doped Cu0.95-xM0.05LixO system was discussed.

Effect of Ca and/or Mn substitution on thermoelectric properties of SrTiO3

2021 ◽  
Author(s):  
D. Mohan Radheep
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Mixed Valence ◽  
Solid State Reaction Method ◽  
Reaction Method ◽  
Cubic Lattice ◽  
Mn Substitution

Thermoelectric properties have been investigated for Sr0.5Ca0.5Ti1-xMnxO3 (x = 0.25, 0.5, 0.75) and Sr0.75Ca0.25Ti0.75Mn0.25O3 perovskite polycrystalline samples synthesized by solid-state reaction method. Following physical properties such as thermal conductivity, electrical resistivity, Seebeck coefficient, power factor and figure of merit (ZT) were measured. The substitution of Ca2+ in Sr2+ site or/and mixed valence Mn in Ti site creates appreciable enhancement in the thermoelectric properties with an increase of ZT from 0.5 to 0.69 at room temperature. The origin for the enrichment of ZT of the investigated samples around room temperature is due to substitution induced distortion in the cubic lattice.

Thermoelectric Properties of La-doped BaSi2 and (Ba,Sr)Si2 Solid Solutions

2007 ◽  
Vol 1044 ◽  
Author(s):  
Kohsuke Hashimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Dimensionless Figure Of Merit ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
La Doped

AbstractWe studied the thermoelectric properties of BaSi2 and SrSi2. The polycrystalline samples were prepared by spark plasma sintering (SPS). The electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) were measured above room temperature. The maximum values of the dimensionless figure of merit (ZT) were 0.01 at 954 K for BaSi2 and 0.09 at 417 K for SrSi2. We tried to enhance the ZT values of BaSi2 and SrSi2 by prepareing and characterizing La-doped BaSi2 and (Ba,Sr)Si2 solid solution.

COMPARISON OF HARMAN AND COOLING COUPLE METHODS FOR Z DETERMINATION

1966 ◽  
Vol 44 (5) ◽  
pp. 971-985 ◽  
Author(s):  
W. B. Muir
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Temperature Difference ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Maximum Temperature ◽  
Maximum Temperature Difference ◽  
Type Apparatus

A Peltier–Seebeck or Harman type apparatus has been constructed to measure the Seebeclc coefficient, α, thermal conductivity, κ, electrical resistivity, ρ, and the figure of merit, Z, of thermoelectric materials over the range of temperature 150–300 °K while maintaining the sample in an approximately isothermal environment. Errors in the measured values of ρ, Z, α, and κ have been kept within 1, 1.5, 3, and 5% respectively. A comparison of the maximum temperature difference, ΔTmax, measured in a cooling test and the value of ΔTmax calculated from the values of α, κ, and ρ as a function of temperature measured in the Harman apparatus shows that, for five thermocouples, agreement is obtained within 1.2 °K on the average, with the greatest disparity being 2.5 °K.

Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant

2003 ◽  
Vol 805 ◽  
Author(s):  
Tsunehiro Takeuchi ◽  
Toshio Otagiri ◽  
Hiroki Sakagami ◽  
Uichiro Mizutani
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Low Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTThe electrical resistivity, thermoelectric power, and thermal conductivity were investigated for the Al71.6-xMn 17.4Six and Al71.6-xRe 17.4Six (7 ≤ x ≤ 12) 1/1-cubic approximants. A large thermoelectric power ranging from -40 to 90 μV/K and a low thermal conductivity less than 3 W/K·cm were observed at room temperatures. The electrical resistivity at room temperature for these approximants was kept below 4,000 μΩcm, that is much smaller than that in the corresponding quasicrystals. As a result of the large thermoelectric power, the low thermal conductivity, and the low electrical resistivity, large dimensionless figure of merit ZT = 0.10 (n-type) and 0.07 (p-type) were achieved for the Al71.6Re17.4Si11 and Al71.6Mn17.4Si11 at room temperature, respectively.

Fabrication and Thermoelectric Properties of N-Type Bi2Te3 Based Compounds by Spark Plasma Sintering

2005 ◽  
Vol 486-487 ◽  
pp. 253-256 ◽  
Author(s):  
D.M. Lee ◽  
Cheol Ho Lim ◽  
Dong Choul Cho ◽  
Seung Y. Shin ◽  
Won Seung Cho
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Spark Plasma Sintering ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Powder Size ◽  
Plasma Sintering ◽  
Spark Plasma

N-type Bi2Te3 based thermoelectric compound was prepared by spark plasma sintering with a temperature range of 340~460°C and powder size of ~75㎛, 76~150㎛, 151~250㎛. Thermoelectric properties of the compound were measured as a function of the sintering temperature and powder size. With increasing sintering temperature, the electrical resistivity and thermal conductivity of the compound greatly changed because of the increase in relative density. The Seebeck coefficient and electrical resistivity were varied largely with increasing powder size. Therefore, the compound sintered at 460°C, with the powder of ~75㎛, showed a figure of merit of 2.44 x 10-3/K. Also, the bending strength was 75MPa.

The thermoelectric properties of CoSb3 compound doped with Te and Sn synthesized at different pressure

2017 ◽  
Vol 31 (28) ◽  
pp. 1750261 ◽  
Author(s):  
Yiping Jiang ◽  
Xiaopeng Jia ◽  
Hongan Ma
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Raw Materials ◽  
Absolute Value ◽  
Dimensionless Figure Of Merit

The skutterudite CoSb[Formula: see text]Te[Formula: see text]Sn[Formula: see text] compound was synthesized successfully by high pressure and high temperature (HPHT) method using Co, Sb, Te and Sn powder as raw materials. The effects of pressure on its structure and the thermoelectric properties are investigated systematically from 300 K to 800 K. The electrical resistivity and the absolute value of the Seebeck coefficient for the sample increases with rising synthetic pressure. The thermal conductivity of the sample decreases with synthetic pressure and temperature rising in the range of 300–800 K. In this study, the maximum dimensionless figure of merit (ZT) value of 1.17 has been achieved at 793 K, 3 GPa for this thermoelectric material.

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